Studies of solution processed metal oxides on silicon

• Published in: Microelectronic engineering Vol. 84; no. 9; pp. 2294 - 2297
• Main Authors: Shanmugasundaram, K., Brubaker, M., Chang, K., Mumbauer, P., Roman, P., Ruzyllo, J.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.09.2007; Elsevier Science
• Subjects: Acoustic wave devices, piezoelectric and piezoresistive devices; Applied sciences; Electronics; Exact sciences and technology; Ferroelectrics; High-k dielectrics; Integrated circuits; Integrated circuits by function (including memories and processors); Magnetic and optical mass memories; Metal oxides; Mist deposition; Selective deposition; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Storage and reproduction of information; Metal oxides; Ferroelectrics; High-k dielectrics; Mist deposition; Selective deposition; Performance evaluation; Ferroelectric device; Memory devices; metal oxides; Oxide layer; Thin film; ferroelectrics; Semiconductor device; Liquid metal; selective deposition; Selective growth; Ferroelectric materials; Manufacturing process; Spin-on coatings; high-k dielectrics; High k dielectric; mist deposition; Permittivity; Ferroelectric storage; Growth from solution

With the growing diversification of semiconductor device applications there is a growing need for broader inclusion of metal oxides into mainstream semiconductor technology. The common feature for this class of materials is that their dielectric constant is higher than that of SiO 2. Moreover, some...