Air-Stable n-Channel Organic Semiconductors Based on Perylene Diimide Derivatives without Strong Electron Withdrawing Groups

Air‐stable transistors based on perylene diimides without strong electron withdrawing groups (see figure) are reported. Through varying the device fabrication process, electron mobilities on the order of 0.1 cm2 V–1 s–1 are achieved by using silica surfaces treated with a surfactant at elevated subs...

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Bibliographic Details
Published inAdvanced materials (Weinheim) Vol. 19; no. 8; pp. 1123 - 1127
Main Authors Ling, M.-M., Erk, P., Gomez, M., Koenemann, M., Locklin, J., Bao, Z.
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 20.04.2007
WILEY‐VCH Verlag
Subjects
Field-effect mobility
organic
Semiconductors
Semiconductors, organic
Structure-property relationships
Transistors
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Summary:Air‐stable transistors based on perylene diimides without strong electron withdrawing groups (see figure) are reported. Through varying the device fabrication process, electron mobilities on the order of 0.1 cm2 V–1 s–1 are achieved by using silica surfaces treated with a surfactant at elevated substrate temperatures. The devices show good air‐stability, even after prolonged storage in air (> 80 days). These compounds are potentially useful air‐stable n‐type semiconductors for thin film transistors.
Bibliography:ArticleID:ADMA200601705
ark:/67375/WNG-TLC2VVHC-M
Intelligence Community Postdoctoral Fellowship
BASF Future Business Unit
Z.B. acknowledges financial support from the BASF Future Business Unit. J.L. would like to thank the Intelligence Community Postdoctoral Fellowship for financial support.
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ObjectType-Article-2
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ObjectType-Feature-1
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ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200601705