Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs

• Published in: IEEE transactions on electron devices Vol. 61; no. 8; pp. 2785 - 2792
• Main Authors: Zhikai Tang, Sen Huang, Xi Tang, Baikui Li, Chen, Kevin J.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.08.2014; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: AlGaN/GaN; AlN; Aluminum nitride; charge compensation; current collapse; Devices; dynamic ON-resistance; Dynamics; electric field distribution; Electric fields; electroluminescence (EL); Gallium nitrides; HEMTs; high electron mobility transistor (HEMT); High electron mobility transistors; high voltage; III-V semiconductor materials; Logic gates; MODFETs; numerical simulations; Passivation; plasma-enhanced atomic layer deposition (PEALD); polarization; pulsed I-V; Semiconductor devices; surface passivation; surface/interface states; Switches; Temperature measurement; numerical simulations; AlN; surface passivation; electric field distribution; current collapse; surface/interface states; charge compensation; dynamic ON-resistance; high voltage; AlGaN/GaN; electroluminescence (EL); plasma-enhanced atomic layer deposition (PEALD); pulsed I – V; polarization; high electron mobility transistor (HEMT)

We investigate in detail the influence of AlN passivation on dynamic ON-resistance (R ON ) and electric field (E-field) distribution in high-voltage AlGaN/GaN high electron mobility transistors (HEMTs) on a Si substrate based on pulsed I-V measurements, electroluminescence (EL) microscopy, and 2-D p...