Electroluminescence of double-doped diamond thin films

A new electroluminescence device is fabricated by microwave plasma chemical vapour deposition system and electron beam vapour deposition system. It is comprised of highly doped silicon/diamond/boron/nitrogen-doped diamond/indium tin oxide thin films. Effects of process parameters on morphologies and...

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Published inChinese physics B Vol. 19; no. 9; pp. 612 - 616
Main Author 章诗 王小平 王丽军 朱玉传 梅翠玉 刘欣欣 李怀辉 顾应展
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.09.2010
Subjects
Cadmium
Devices
Electric potential
Electroluminescence
Indium tin oxide
Luminance
Spectrometers
Thin films
化学气相沉积系统
双掺杂
微波等离子体
扫描电子显微镜
激光拉曼光谱仪
薄膜电致发光器件
金刚石薄膜
铟锡氧化物薄膜
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/19/9/097805

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Abstract A new electroluminescence device is fabricated by microwave plasma chemical vapour deposition system and electron beam vapour deposition system. It is comprised of highly doped silicon/diamond/boron/nitrogen-doped diamond/indium tin oxide thin films. Effects of process parameters on morphologies and structures of the thin films are detected and analysed by scanning electron microscopy, Raman spectrometer and x-ray photoelectron spectrometer. A direct-current （DC） power supply is used to drive the electroluminescence device. The blue light emission with a luminance of 1.2 cd·m^-2 is observed from this double-doped diamond thin film electroluminescence device at an applied voltage of 105 V.
AbstractList A new electroluminescence device is fabricated by microwave plasma chemical vapour deposition system and electron beam vapour deposition system. It is comprised of highly doped silicon/diamond/boron/nitrogen-doped diamond/indium tin oxide thin films. Effects of process parameters on morphologies and structures of the thin films are detected and analysed by scanning electron microscopy, Raman spectrometer and x-ray photoelectron spectrometer. A direct-current (DC) power supply is used to drive the electroluminescence device. The blue light emission with a luminance of 1.2 cd-m-2 is observed from this double-doped diamond thin film electroluminescence device at an applied voltage of 105 V.
A new electroluminescence device is fabricated by microwave plasma chemical vapour deposition system and electron beam vapour deposition system. It is comprised of highly doped silicon/diamond/boron/nitrogen-doped diamond/indium tin oxide thin films. Effects of process parameters on morphologies and structures of the thin films are detected and analysed by scanning electron microscopy, Raman spectrometer and x-ray photoelectron spectrometer. A direct-current （DC） power supply is used to drive the electroluminescence device. The blue light emission with a luminance of 1.2 cd·m^-2 is observed from this double-doped diamond thin film electroluminescence device at an applied voltage of 105 V.
Author 章诗 王小平 王丽军 朱玉传 梅翠玉 刘欣欣 李怀辉 顾应展
AuthorAffiliation College of Science, University of Shanghai for Science and Technology, Shanghai 200093, China
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electroluminescence, double-doped diamond thin film, microwave plasma chemical vapour deposition, electron beam vapour deposition
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SubjectTerms Cadmium
Devices
Electric potential
Electroluminescence
Indium tin oxide
Luminance
Spectrometers
Thin films
化学气相沉积系统
双掺杂
微波等离子体
扫描电子显微镜
激光拉曼光谱仪
薄膜电致发光器件
金刚石薄膜
铟锡氧化物薄膜
Title Electroluminescence of double-doped diamond thin films
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