Impact of current-induced degradation process on the electro-optical characteristics of InGaN/GaN multiple-quantum-well photodetectors fabricated on sapphire substrate

• Published in: Applied Physics Letters Vol. 118; no. 2
• Main Authors: Dalapati, Pradip, Yamamoto, Kosuke, Egawa, Takashi, Miyoshi, Makoto
• Format: Journal Article
• Language: English; Japanese
• Published: Melville AIP Publishing 11.01.2021; American Institute of Physics
• Subjects: Applied physics; Carrier density; Current leakage; Defects; Degradation; Gallium nitrides; Indium gallium nitrides; Optical measurement; Optical properties; Photometers; Quantum efficiency; Quantum wells; Sapphire; Substrates

The impact of defects on the degradation behaviors of InGaN/GaN multiple-quantum-well photodetectors submitted to dc current stress has been intensively studied. The root mechanism for degradation has been studied employing combined electro-optical measurements. The collected results indicate that (...