An 83-GHz High-Gain SiGe BiCMOS Power Amplifier Using Transmission-Line Current-Combining Technique

An 83-GHz two-stage cascode power amplifier (PA) implemented in a low-cost 200/180-GHz fT / f max 0.18-μm SiGe BiCMOS technology is presented. The power-combining technique based upon a low-loss two-way transmission-line current combiner has been employed that simultaneously addresses the gain requi...

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Bibliographic Details
Published inIEEE transactions on microwave theory and techniques Vol. 61; no. 4; pp. 1557 - 1569
Main Authors Chen, Austin Ying-Kuang, Baeyens, Y., Young-Kai Chen, Jenshan Lin
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.04.2013
Institute of Electrical and Electronics Engineers
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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