An 83-GHz High-Gain SiGe BiCMOS Power Amplifier Using Transmission-Line Current-Combining Technique
An 83-GHz two-stage cascode power amplifier (PA) implemented in a low-cost 200/180-GHz fT / f max 0.18-μm SiGe BiCMOS technology is presented. The power-combining technique based upon a low-loss two-way transmission-line current combiner has been employed that simultaneously addresses the gain requi...
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Published in | IEEE transactions on microwave theory and techniques Vol. 61; no. 4; pp. 1557 - 1569 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.04.2013
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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