Lateral Phase Heterojunction for Perovskite Microoptoelectronics

• Published in: Advanced materials (Weinheim) Vol. 36; no. 50; pp. e2409201 - n/a
• Main Authors: Li, Lei, Yan, Haoming, Li, Shunde, Xu, Hongyu, Qu, Duo, Hu, An, Ma, Li, Ji, Yongqiang, Zhong, Qixuan, Zhao, Lichen, Xu, Fan, Tu, Yongguang, Song, Tinglu, Wu, Jiang, Li, Menglin, Lu, Changjun, Yang, Xiaoyu, Zhong, Haizheng, Gong, Qihuang, Wang, Xinqiang, Zhu, Rui
• Format: Journal Article
• Language: English
• Published: Germany Wiley Subscription Services, Inc 01.12.2024
• Subjects: Bright plating; Carrier recombination; contact diffusion lithography; Epitaxial growth; Funnels; Heterojunctions; lateral phase heterojunction; Light emitting diodes; Mass production; micro‐optoelectronics; Near infrared radiation; Optoelectronic devices; perovskite light‐emitting diode; Perovskites; Phase transitions; Radiative recombination; micro‐optoelectronics; contact diffusion lithography; perovskite light‐emitting diode; lateral phase heterojunction

Perovskite heterojunction engineering is the prerequisite but still a deficiency in the fabrication of micro‐optoelectronic devices, where the present top‐down or bottom‐up techniques mainly focus on preparing the vertical heterojunction stacks. Perovskite lateral heterojunction structures generally...