In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs

• Published in: Journal of materials science. Materials in electronics Vol. 19; no. 2; pp. 137 - 142
• Main Authors: Reentilä, O., Lankinen, A., Mattila, M., Säynätjoki, A., Tuomi, T. O., Lipsanen, H., O’Reilly, L., McNally, P. J.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Boston Springer US 01.02.2008; Springer; Springer Nature B.V
• Subjects: Applied sciences; Bulk sampling; Characterization and Evaluation of Materials; Chemistry and Materials Science; Cross-disciplinary physics: materials science; rheology; Cyclic accelerators and storage rings; Dislocations; Electronics; Exact sciences and technology; Experimental methods and instrumentation for elementary-particle and nuclear physics; Gallium arsenide; Materials; Materials Science; Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); Misfit dislocations; Nuclear physics; Optical and Electronic Materials; Physics; Reflectance; Reflectivity; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Synchrotrons; Vapor phase epitaxy; growth from vapor phase; X-ray topography; Critical Thickness; Misfit Dislocation; Reflectance Curve; GaAs; Complex Refractive Index; Microelectronic fabrication; High resolution; Misfit dislocation; Synchrotrons; In situ; MOVPE method; X ray topography; X ray diffractometry; Synchrotron radiation; Reflectance

In order to investigate the possibilities of in-situ monitoring of GaAsN bulk layer growth and the crystal quality concerning the formation of misfit dislocations, GaAsN bulk samples with different layer thicknesses were grown using a metal-organic vapor phase epitaxy system equipped with a normal i...