Interfacial electronic structure of molybdenum oxide on the fullerene layer, a potential hole-injecting layer in inverted top-emitting organic light-emitting diodes

• Published in: Current applied physics Vol. 13; no. 6; pp. 1037 - 1041
• Main Authors: Lim, J.T., Park, J.W., Yeom, G.Y.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.08.2013; 한국물리학회
• Subjects: absorption; Buckminsterfullerene; Carbon; chemical reactions; Electronic structure; fullerene; Fullerenes; Inverted top-emitting organic light-emitting diode; Luminance; molybdenum; Molybdenum oxides; Near-edge X-ray absorption fine structure; Organic light-emitting diodes; Photoelectron spectroscopy; spectroscopy; Ultraviolet photoemission spectroscopy; X-radiation; X-ray photoemission spectroscopy; 물리학; Electronic structure; X-ray photoemission spectroscopy; Near-edge X-ray absorption fine structure; Ultraviolet photoemission spectroscopy; Inverted top-emitting organic light-emitting diode

The interfacial electronic structures of molybdenum oxide (MoOx) deposited on fullerene (C60) which could be used as a hole-injecting layer in inverted top-emitting organic light-emitting diodes (TE-OLEDs) were investigated by photoemission spectroscopy. The hole-injecting barrier height (ΦBh) at ea...