Dawn of nitride ferroelectric semiconductors: from materials to devices

• Published in: Semiconductor science and technology Vol. 38; no. 4; pp. 43002 - 43030
• Main Authors: Wang, Ping, Wang, Ding, Mondal, Shubham, Hu, Mingtao, Liu, Jiangnan, Mi, Zetian
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.04.2023
• Subjects: BAlN; ferroelectric; hBN; nitride semiconductors; ScAlN; ScGaN

III-nitride semiconductors are promising optoelectronic and electronic materials and have been extensively investigated in the past decades. New functionalities, such as ferroelectricity, ferromagnetism, and superconductivity, have been implanted into III-nitrides to expand their capability in next-...