Dawn of nitride ferroelectric semiconductors: from materials to devices

III-nitride semiconductors are promising optoelectronic and electronic materials and have been extensively investigated in the past decades. New functionalities, such as ferroelectricity, ferromagnetism, and superconductivity, have been implanted into III-nitrides to expand their capability in next-...

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Published inSemiconductor science and technology Vol. 38; no. 4; pp. 43002 - 43030
Main Authors Wang, Ping, Wang, Ding, Mondal, Shubham, Hu, Mingtao, Liu, Jiangnan, Mi, Zetian
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.04.2023
Subjects
BAlN
ferroelectric
hBN
nitride semiconductors
ScAlN
ScGaN
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Abstract III-nitride semiconductors are promising optoelectronic and electronic materials and have been extensively investigated in the past decades. New functionalities, such as ferroelectricity, ferromagnetism, and superconductivity, have been implanted into III-nitrides to expand their capability in next-generation semiconductor and quantum technologies. The recent experimental demonstration of ferroelectricity in nitride materials, including ScAl(Ga)N, boron-substituted AlN, and hexagonal BN, has inspired tremendous research interest. Due to the large remnant polarization, high breakdown field, high Curie temperature, and significantly enhanced piezoelectric, linear and nonlinear optical properties, nitride ferroelectric semiconductors have enabled a wealth of applications in electronic, ferroelectronic, acoustoelectronic, optoelectronic, and quantum devices and systems. In this review, the development of nitride ferroelectric semiconductors from materials to devices is discussed. While expounding on the unique advantages and outstanding achievements of nitride ferroelectrics, the existing challenges and promising prospects have been also discussed.
AbstractList III-nitride semiconductors are promising optoelectronic and electronic materials and have been extensively investigated in the past decades. New functionalities, such as ferroelectricity, ferromagnetism, and superconductivity, have been implanted into III-nitrides to expand their capability in next-generation semiconductor and quantum technologies. The recent experimental demonstration of ferroelectricity in nitride materials, including ScAl(Ga)N, boron-substituted AlN, and hexagonal BN, has inspired tremendous research interest. Due to the large remnant polarization, high breakdown field, high Curie temperature, and significantly enhanced piezoelectric, linear and nonlinear optical properties, nitride ferroelectric semiconductors have enabled a wealth of applications in electronic, ferroelectronic, acoustoelectronic, optoelectronic, and quantum devices and systems. In this review, the development of nitride ferroelectric semiconductors from materials to devices is discussed. While expounding on the unique advantages and outstanding achievements of nitride ferroelectrics, the existing challenges and promising prospects have been also discussed.
Author Mi, Zetian
Mondal, Shubham
Wang, Ding
Liu, Jiangnan
Hu, Mingtao
Wang, Ping
Author_xml – sequence: 1
  givenname: Ping
  orcidid: 0000-0002-4716-5457
  surname: Wang
  fullname: Wang, Ping
  organization: University of Michigan Department of Electrical Engineering and Computer Science, Ann Arbor, MI 48109, United States of America
– sequence: 2
  givenname: Ding
  surname: Wang
  fullname: Wang, Ding
  organization: University of Michigan Department of Electrical Engineering and Computer Science, Ann Arbor, MI 48109, United States of America
– sequence: 3
  givenname: Shubham
  surname: Mondal
  fullname: Mondal, Shubham
  organization: University of Michigan Department of Electrical Engineering and Computer Science, Ann Arbor, MI 48109, United States of America
– sequence: 4
  givenname: Mingtao
  surname: Hu
  fullname: Hu, Mingtao
  organization: University of Michigan Department of Electrical Engineering and Computer Science, Ann Arbor, MI 48109, United States of America
– sequence: 5
  givenname: Jiangnan
  surname: Liu
  fullname: Liu, Jiangnan
  organization: University of Michigan Department of Electrical Engineering and Computer Science, Ann Arbor, MI 48109, United States of America
– sequence: 6
  givenname: Zetian
  orcidid: 0000-0001-9494-7390
  surname: Mi
  fullname: Mi, Zetian
  organization: University of Michigan Department of Electrical Engineering and Computer Science, Ann Arbor, MI 48109, United States of America
BookMark eNp9kEtLAzEUhYNUsK3uXWbnxrE3r3m4k6pVKLjRdcgTUjqTkqSK_94pFRciri7ncL4L58zQZIiDQ-iSwA2Btl0QVpOqrjlZKKNbcCdo-mNN0BRo3VaEcnqGZjlvAAhpGUzR6l59DDh6PISSgnXYu5Si2zozSoOz64OJg92bElO-xT7FHvequBTUNuMSsXXvwbh8jk796LiL7ztHb48Pr8unav2yel7erSvDKZSqY6KxVGvCoVGNFY4TTr1thBKdYJRpylgnNBHAFHBFvXfdGKSaqIYZr9kcwfGvSTHn5LzcpdCr9CkJyMMQ8tBaHlrL4xAjUv9CTCiqhDiUpML2P_D6CIa4k5u4T8PY7L_41R_xnItkreQSOAOgcmc9-wLcfYCk
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ContentType Journal Article
Copyright 2023 The Author(s). Published by IOP Publishing Ltd
Copyright_xml – notice: 2023 The Author(s). Published by IOP Publishing Ltd
DBID O3W
TSCCA
AAYXX
CITATION
DOI 10.1088/1361-6641/acb80e
DatabaseName Institute of Physics Open Access Journal Titles
IOPscience (Open Access)
CrossRef
DatabaseTitle CrossRef
DatabaseTitleList CrossRef
Database_xml – sequence: 1
  dbid: O3W
  name: Institute of Physics Open Access Journal Titles
  url: http://iopscience.iop.org/
  sourceTypes:
    Enrichment Source
    Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
Physics
EISSN 1361-6641
ExternalDocumentID 10_1088_1361_6641_acb80e
sstacb80e
GrantInformation_xml – fundername: Defense Advanced Research Projects Agency
  funderid: http://dx.doi.org/10.13039/100000185
– fundername: Office of Naval Research
  grantid: N00014-19-1-2225
  funderid: http://dx.doi.org/10.13039/100000006
GroupedDBID -~X
.DC
123
1JI
4.4
5B3
5PX
5VS
5ZH
7.M
7.Q
AAGCD
AAGID
AAHTB
AAJIO
AAJKP
AATNI
ABCXL
ABHWH
ABJNI
ABPEJ
ABQJV
ABVAM
ACAFW
ACBEA
ACGFO
ACGFS
ACHIP
AEFHF
AENEX
AFYNE
AKPSB
ALMA_UNASSIGNED_HOLDINGS
AOAED
ASPBG
ATQHT
AVWKF
AZFZN
CBCFC
CEBXE
CJUJL
CRLBU
CS3
DU5
E.-
EBS
EDWGO
EMSAF
EPQRW
EQZZN
HAK
IHE
IJHAN
IOP
IZVLO
KOT
LAP
M45
N5L
N9A
O3W
P2P
PJBAE
PZZ
R4D
RIN
RNS
RO9
ROL
RPA
SY9
TAE
TN5
TSCCA
TWZ
UCJ
W28
XPP
ZMT
AAYXX
CITATION
ID FETCH-LOGICAL-c420t-9357d2bb1407a7d5e4142fd75a595323b23395b1503a04a2ffe97a72b1a73cfb3
IEDL.DBID O3W
ISSN 0268-1242
IngestDate Thu Apr 24 23:03:22 EDT 2025
Tue Jul 01 02:44:53 EDT 2025
Wed Jun 07 11:19:04 EDT 2023
Wed Aug 21 03:34:57 EDT 2024
IsDoiOpenAccess true
IsOpenAccess true
IsPeerReviewed true
IsScholarly true
Issue 4
Language English
License Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c420t-9357d2bb1407a7d5e4142fd75a595323b23395b1503a04a2ffe97a72b1a73cfb3
Notes SST-109100.R1
ORCID 0000-0001-9494-7390
0000-0002-4716-5457
OpenAccessLink https://iopscience.iop.org/article/10.1088/1361-6641/acb80e
PageCount 29
ParticipantIDs iop_journals_10_1088_1361_6641_acb80e
crossref_primary_10_1088_1361_6641_acb80e
crossref_citationtrail_10_1088_1361_6641_acb80e
ProviderPackageCode CITATION
AAYXX
PublicationCentury 2000
PublicationDate 2023-04-01
PublicationDateYYYYMMDD 2023-04-01
PublicationDate_xml – month: 04
  year: 2023
  text: 2023-04-01
  day: 01
PublicationDecade 2020
PublicationTitle Semiconductor science and technology
PublicationTitleAbbrev SST
PublicationTitleAlternate Semicond. Sci. Technol
PublicationYear 2023
Publisher IOP Publishing
Publisher_xml – name: IOP Publishing
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SSID ssj0011830
Score 2.5959089
SecondaryResourceType review_article
Snippet III-nitride semiconductors are promising optoelectronic and electronic materials and have been extensively investigated in the past decades. New...
SourceID crossref
iop
SourceType Enrichment Source
Index Database
Publisher
StartPage 43002
SubjectTerms BAlN
ferroelectric
hBN
nitride semiconductors
ScAlN
ScGaN
Title Dawn of nitride ferroelectric semiconductors: from materials to devices
URI https://iopscience.iop.org/article/10.1088/1361-6641/acb80e
Volume 38
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV3NS9xAFH_sWgp6kNYqfrQyB3vwkG4yb2YyqydRt1aoeqjU2zCTmYAgyZKk-O_7ZhMXhSLecniZCT_eZ94XwAFFXM6rgAl3FhMh0SUuU47kiudk0FUoRWxw_n2lLm7F5Z28G8Hxshemng-q_wc99oOCewiHgjg9yVBliVIim9jC6TSM4QNqpWPkdY1_lykE4tXhBwuFSWSIhhzl_054ZZPGdO8LEzP7BOuDb8hO-i_5DKNQbcDai4mBG_BxUbFZtF_g55l9rFhdMpLJ5t4HVoamqfutNvcFa2PRe13Faa510x6x2EbCyDvtGY51NfNhoSQ24XZ2_uf0Ihm2IiSF4GmXTFHmnjtHkVFucy-DyAQvfS6tnErk6DjiVDpy9NCmwvKyDFMi5C6zORalwy1YqeoqbAMjX0WSjQ-Yk5FPQ2691soLnyJp8FQXOzB5xsUUw8jwuLniwSxS11qbiKSJSJoeyR04XL4x78dlvEH7naA2g8y0b9CxV3Rt2xnURpg4rizlZu7L3XcetQercV18X3nzFVa65l_4Rk5F5_Zh_Ov6Zn_BQk88p8Rk
linkProvider IOP Publishing
linkToPdf http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LS-UwFA56RRkXg09GndEsdOGi3jYnSXvdyTjX69uForuQNCkI0l7ain_fkzaKgsjsujhNysd59rwI2cWIy1jpIGJGQ8QFmMgk0qBcsRQNunQF9w3Ol1dycsfPHsRD2HPa9cJU06D6D_CxHxTcQxgK4rJhAjKJpOTJUOcmi91waotZMidASr-74Rru39MIyK_hJwuGSmiMQp7yq1M-2aVZvPuDmRkvkZ_BP6RH_dcskxlXrpDFD1MDV8h8V7WZN6vk5Fi_lLQqKMpl_WgdLVxdV_1mm8ecNr7wvSr9RNeqbg6pbyWh6KH2TEfbilrXKYo1cjf-d_t3EoXNCFHOWdxGIxCpZcZgdJTq1ArHE84KmwotRgIYGAYwEgadPdAx16wo3AgJmUl0CnlhYJ0Myqp0vwhFf0WgnXeQoqGPXaptlknLbQyoxeMs3yDDN1xUHsaG--0VT6pLX2eZ8kgqj6Tqkdwg--9vTPuRGd_Q7iHUKshN8w0d_UTXNK2CTHHlR5bFTCELbP7nUTtk4eZ4rC5Or863yA-_Pb4vxPlNBm397P6gj9Ga7Y6PXgHdOcdK
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Dawn+of+nitride+ferroelectric+semiconductors%3A+from+materials+to+devices&rft.jtitle=Semiconductor+science+and+technology&rft.au=Wang%2C+Ping&rft.au=Wang%2C+Ding&rft.au=Mondal%2C+Shubham&rft.au=Hu%2C+Mingtao&rft.date=2023-04-01&rft.issn=0268-1242&rft.eissn=1361-6641&rft.volume=38&rft.issue=4&rft.spage=43002&rft_id=info:doi/10.1088%2F1361-6641%2Facb80e&rft.externalDBID=n%2Fa&rft.externalDocID=10_1088_1361_6641_acb80e
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0268-1242&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0268-1242&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0268-1242&client=summon