Structural and optical properties of epitaxially laterally overgrown a-plane GaN epilayer on SiO2 stripe patterned r-plane sapphire
We have studied the structural anisotropic characteristics of epitaxially laterally overgrown (ELOG) a -plane GaN epilayer on r -plane sapphire substrate with two different SiO 2 -stripe orientations using metal organic chemical vapor deposition. The SiO 2 stipe patterns were made along [0001] and c...
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| Published in | Electronic materials letters Vol. 9; no. 5; pp. 587 - 592 |
|---|---|
| Main Authors | , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Dordrecht
Springer Netherlands
01.09.2013
대한금속·재료학회 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1738-8090 2093-6788 |
| DOI | 10.1007/s13391-013-3065-7 |
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| Abstract | We have studied the structural anisotropic characteristics of epitaxially laterally overgrown (ELOG)
a
-plane GaN epilayer on
r
-plane sapphire substrate with two different SiO
2
-stripe orientations using metal organic chemical vapor deposition. The SiO
2
stipe patterns were made along [0001] and
crystographilic orientations of GaN which correspond to
and
directions of
r
-plane sapphire, respectively. The ELOG
a
-plane GaN on [0001]-stripe orientation reveals symmetric morphology in the extent of lateral overgrowth compared to that grown on
-oriented stripe. Threading dislocation and basal stacking fault densities in wing region were ∼8 × 10
7
cm
−2
and ∼5.2 × 10
4
cm
−1
, respectively. Raman measurement of the fully coalesced a-plane GaN indicated a compressive strain of about 0.39 Gpa in the window region. |
|---|---|
| AbstractList | We have studied the structural anisotropic characteristics of epitaxially laterally overgrown (ELOG)
a
-plane GaN epilayer on
r
-plane sapphire substrate with two different SiO
2
-stripe orientations using metal organic chemical vapor deposition. The SiO
2
stipe patterns were made along [0001] and
crystographilic orientations of GaN which correspond to
and
directions of
r
-plane sapphire, respectively. The ELOG
a
-plane GaN on [0001]-stripe orientation reveals symmetric morphology in the extent of lateral overgrowth compared to that grown on
-oriented stripe. Threading dislocation and basal stacking fault densities in wing region were ∼8 × 10
7
cm
−2
and ∼5.2 × 10
4
cm
−1
, respectively. Raman measurement of the fully coalesced a-plane GaN indicated a compressive strain of about 0.39 Gpa in the window region. We have studied the structural anisotropic characteristics of epitaxially laterally overgrown (ELOG) a-plane GaN epilayer on r-plane sapphire substrate with two different SiO2-stripe orientations using metal organic chemical vapor deposition. The SiO2 stipe patterns were made along [0001] and [1100] crystographilic orientations of GaN which correspond to [1101] and [1120] directions of r-plane sapphire, respectively. The ELOG a-plane GaN on [0001]-stripe orientation reveals symmetric morphology in the extent of lateral overgrowth compared to that grown on [1100]-oriented stripe. Threading dislocation and basal stacking fault densities in wing region were ~8 × 107 cm−2 and ~5.2 × 104 cm−1, respectively. Raman measurement of the fully coalesced a-plane GaN indicated a compressive strain of about 0.39 Gpa in the window region. KCI Citation Count: 6 We have studied the structural anisotropic characteristics of epitaxially laterally overgrown (ELOG) a-plane GaN epilayer on r-plane sapphire substrate with two different SiO2-stripe orientations using metal organic chemical vapor deposition. The SiO2 stipe patterns were made along [0001] and $$\left[ {1\underset{\raise0.3em\hbox{$\smash{\scriptscriptstyle-}$}}{1} 00} \right]$$ crystographilic orientations of GaN which correspond to $$\left[ {\underset{\raise0.3em\hbox{$\smash{\scriptscriptstyle-}$}}{1} 101} \right]$$ and $$\left[ {11\underset{\raise0.3em\hbox{$\smash{\scriptscriptstyle-}$}}{2} 0} \right]$$ directions of r-plane sapphire, respectively. The ELOG a-plane GaN on [0001]-stripe orientation reveals symmetric morphology in the extent of lateral overgrowth compared to that grown on $$\left[ {1\underset{\raise0.3em\hbox{$\smash{\scriptscriptstyle-}$}}{1} 00} \right]$$ -oriented stripe. Threading dislocation and basal stacking fault densities in wing region were a148 A 107 cm-2 and a145.2 A 104 cm-1, respectively. Raman measurement of the fully coalesced a-plane GaN indicated a compressive strain of about 0.39 Gpa in the window region. |
| Author | Lee, Seul Be Park, Ah Hyun Chung, Sang Jo Suh, Eun-Kyung Seo, Tae Hoon Lee, Yong Seok Kim, Hun Choi, Chel-Jong |
| Author_xml | – sequence: 1 givenname: Yong Seok surname: Lee fullname: Lee, Yong Seok organization: IlJIN LED Co., Ltd – sequence: 2 givenname: Hun surname: Kim fullname: Kim, Hun organization: School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University – sequence: 3 givenname: Tae Hoon surname: Seo fullname: Seo, Tae Hoon organization: School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University – sequence: 4 givenname: Ah Hyun surname: Park fullname: Park, Ah Hyun organization: School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University – sequence: 5 givenname: Seul Be surname: Lee fullname: Lee, Seul Be organization: School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University – sequence: 6 givenname: Sang Jo surname: Chung fullname: Chung, Sang Jo organization: School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University – sequence: 7 givenname: Chel-Jong surname: Choi fullname: Choi, Chel-Jong organization: Department of BIN Fusion Technology, Chonbuk National University – sequence: 8 givenname: Eun-Kyung surname: Suh fullname: Suh, Eun-Kyung email: eksuh@jbnu.ac.kr organization: School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University |
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| CitedBy_id | crossref_primary_10_1016_j_mssp_2024_108655 crossref_primary_10_1039_C9CE00995G crossref_primary_10_1088_0256_307X_37_3_038102 crossref_primary_10_1007_s13391_015_5054_5 crossref_primary_10_1039_D3CE00478C crossref_primary_10_7567_1882_0786_aaeedb crossref_primary_10_1007_s13391_013_3077_3 |
| Cites_doi | 10.1002/pssr.200750018 10.1007/s13391-012-2060-8 10.1016/j.jcrysgro.2006.01.008 10.1063/1.1866225 10.1063/1.127009 10.1063/1.1498010 10.1063/1.1484543 10.1063/1.1652845 10.1143/JJAP.42.L640 10.1063/1.1513874 10.1007/978-3-642-58562-3 10.1109/LPT.2010.2042950 10.1063/1.1595154 10.1063/1.2128496 10.1088/0953-8984/14/38/201 10.1557/S0883769400034011 10.1063/1.1370366 10.1063/1.1899258 10.1063/1.336035 10.1143/JJAP.47.119 10.1063/1.359465 10.1103/PhysRev.181.1351 10.1063/1.1738185 10.1063/1.1738938 10.1016/0022-0248(77)90011-2 10.1063/1.3206666 10.1063/1.1493220 10.1143/JJAP.42.L1039 10.1103/PhysRevB.71.235334 |
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| References_xml | – reference: NiXFuYMoonY TBiyikliNMorkoçHJ. Cryst. Growth200629016610.1016/j.jcrysgro.2006.01.0081:CAS:528:DC%2BD28XisFyisr4%3D – reference: PonceF AMater. Res. Bull.199722511:CAS:528:DyaK2sXhslOhtrc%3D – reference: ChenYangJWangHZhangJAdivarahanVGaevskiMKuokstisEGongZSuMKhanM AJpn. J. Appl. Phys.200342L64010.1143/JJAP.42.L6401:CAS:528:DC%2BD3sXkvFCms7k%3D – reference: ChitnisChenCAdivarahanVShatalovMKuokstisEMandavilliVYangJKhanM AAppl. Phys. Lett.200484366310.1063/1.17389381:CAS:528:DC%2BD2cXjsVKksbg%3D – reference: ChenCAdivarahanVYangJShatalovMKuokstisEKhanM AJpn. J. Appl. Phys.200342L103910.1143/JJAP.42.L10391:CAS:528:DC%2BD3sXnslKjtr0%3D – reference: PorowskiSGrzegoryIŁucznikBPastuszkaBBoækowskiMTeisseyreHSkierbiszewskiCzKamlerGNowakGSmalcJkoM KProc. of SPIE Opto 06 January, p. 06 January200622 – reference: HwangS MSeoY GBaikK HChoIBaekJ HJungSKimT GChoMAppl. Phys. Lett.20099507110110.1063/1.3206666 – reference: HaskellB ABakerT JMcLaurinM BWuFFiniP TDenBaarsS PSpeckJ SNakamuraSAppl. Phys. Lett.20058611191710.1063/1.1866225 – reference: ZakharovD NLiliental-WeberZWagnerBReitmeierZ JPrebleE ADavisR FPhys. Rev. B2005712353344210.1103/PhysRevB.71.235334 – reference: MorkocHHandbook of Nitride Semiconductors and Devices1999HeidelbergSpringer10.1007/978-3-642-58562-3 – reference: MadarRMichelDJacobGBoulouMJ. Cryst. Growth19974023910.1016/0022-0248(77)90011-2 – reference: CravenM DLimS HWuFSpeckJ SBaarsS P D-Appl. Phys. Lett.20028146910.1063/1.14932201:CAS:528:DC%2BD38XltVOisLY%3D – reference: KoidaTChichibuS FSotaTCravenM DHaskellB ASpeckJ SDenBaarsS PNakamuraSAppl. Phys. Lett.200484376810.1063/1.17381851:CAS:528:DC%2BD2cXjvVSlur0%3D – reference: PaskovP PSchifanoRMonemarBPaskovaTFiggeSHommelDJ. Appl. Phys.20059809351910.1063/1.2128496 – reference: BaikK HSeoY GHongS-KLeeSKimJSonJ-SHwangS-MIEEE Photon. Technol. 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| Snippet | We have studied the structural anisotropic characteristics of epitaxially laterally overgrown (ELOG)
a
-plane GaN epilayer on
r
-plane sapphire substrate with... We have studied the structural anisotropic characteristics of epitaxially laterally overgrown (ELOG) a-plane GaN epilayer on r-plane sapphire substrate with... |
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| SubjectTerms | Characterization and Evaluation of Materials Chemistry and Materials Science Coalescing Condensed Matter Physics Materials Science Nanotechnology Nanotechnology and Microengineering Optical and Electronic Materials 전자/정보통신공학 |
| Title | Structural and optical properties of epitaxially laterally overgrown a-plane GaN epilayer on SiO2 stripe patterned r-plane sapphire |
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