APA (7th ed.) Citation

Lee, Y. S., Kim, H., Seo, T. H., Park, A. H., Lee, S. B., Chung, S. J., . . . Suh, E. (2013). Structural and optical properties of epitaxially laterally overgrown a-plane GaN epilayer on SiO2 stripe patterned r-plane sapphire. Electronic materials letters, 9(5), 587-592. https://doi.org/10.1007/s13391-013-3065-7

Chicago Style (17th ed.) Citation

Lee, Yong Seok, Hun Kim, Tae Hoon Seo, Ah Hyun Park, Seul Be Lee, Sang Jo Chung, Chel-Jong Choi, and Eun-Kyung Suh. "Structural and Optical Properties of Epitaxially Laterally Overgrown A-plane GaN Epilayer on SiO2 Stripe Patterned R-plane Sapphire." Electronic Materials Letters 9, no. 5 (2013): 587-592. https://doi.org/10.1007/s13391-013-3065-7.

MLA (9th ed.) Citation

Lee, Yong Seok, et al. "Structural and Optical Properties of Epitaxially Laterally Overgrown A-plane GaN Epilayer on SiO2 Stripe Patterned R-plane Sapphire." Electronic Materials Letters, vol. 9, no. 5, 2013, pp. 587-592, https://doi.org/10.1007/s13391-013-3065-7.