Evaluation of Pre-Amorphized Layer Thickness and Interface Quality of High-Dose Shallow Implanted Silicon by Spectroscopic Ellipsometry

• Published in: IEEE transactions on semiconductor manufacturing Vol. 23; no. 4; pp. 545 - 552
• Main Authors: Shibata, S, Kawase, F, Kitada, A, Kouzaki, T, Kitamura, A
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.11.2010; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Amorphized layer; Applied sciences; Compound structure devices; Doping; Electronics; Ellipsometry; Exact sciences and technology; Implantation; Ion implantation; Junctions; Microelectronic fabrication (materials and surfaces technology); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductors; Silicon; Spectroscopic analysis; spectroscopic ellipsometry; Spectroscopy; Thickness measurement; Interfacial layer; Amorphous material; High resolution; Ion implantation; Spectroscopic ellipsometry; Doping; Helium; Crystalline material; Microelectronic fabrication; Rutherford backscattering; Transmission electron microscopy; Monitor; Silicon; Selenium; Amorphized layer; Damaging; Shallow junction

We have applied spectroscopic ellipsometry (SE) to measure pre-amorphized layer thickness and interface quality of high-dose shallow implanted silicon as a non-destructive, in line implant monitoring technique. The thickness of pre-amorphized layers formed under various ion implantation conditions w...