Electronic structure, optical absorption and energy loss spectra of GaN graphitic sheet

The graphitic sheet of group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we focus on GaN graphitic sheet, investigating its electronic and optical properties in the framework of density functional theory. The optical properties of the GaN grap...

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Bibliographic Details
Published inJournal of materials science. Materials in electronics Vol. 26; no. 12; pp. 9898 - 9906
Main Author Behzad, Somayeh
Format Journal Article
LanguageEnglish
Published New York Springer US 01.12.2015
Springer Nature B.V
Subjects
Characterization and Evaluation of Materials
Chemistry and Materials Science
Density functional theory
Gallium nitrides
Materials Science
Mathematical analysis
Optical and Electronic Materials
Optical properties
Polarization
Refraction
Semiconductors
Spectra
Optical Conductivity
Wurtzite
Dielectric Function
Electric Field Parallel
Valence Band Maximum
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Summary:The graphitic sheet of group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we focus on GaN graphitic sheet, investigating its electronic and optical properties in the framework of density functional theory. The optical properties of the GaN graphitic sheet such as dielectric function, refraction index, electron energy loss function, reflectivity, absorption coefficient, optical conductivity and extinction index are calculated for both parallel and perpendicular electric field polarizations. The results show that the optical spectra are anisotropic along these two polarizations. Optical conductivity for (E‖x) and (E‖z) is zero when the energy is <2.14 and 3.98 eV, respectively; which confirms that GaN graphitic sheet has semiconductor property.
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ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-015-3666-z