4H-SiC oxynitridation for generation of insulating layers
This paper describes the present state of a nitrogen-based passivation for SiO2 layers on 4H-SiC. Interface state density, oxide breakdown field, channel mobility and gate oxide reliability have been characterized following nitric oxide (NO) passivation anneals. The kinetics of nitrogen incorporatio...
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Published in | Journal of physics. Condensed matter Vol. 16; no. 17; pp. S1857 - S1871 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
05.05.2004
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Online Access | Get full text |
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Summary: | This paper describes the present state of a nitrogen-based passivation for SiO2 layers on 4H-SiC. Interface state density, oxide breakdown field, channel mobility and gate oxide reliability have been characterized following nitric oxide (NO) passivation anneals. The kinetics of nitrogen incorporation and the quantitative modelling between nitrogen content and interface trap density with NO anneals have also been discussed. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0953-8984 1361-648X |
DOI: | 10.1088/0953-8984/16/17/020 |