Laser Doping Strategies Using SiN:P and SiN:B Dielectric Layers for Profile Engineering in High Efficiency Solar Cell

• Published in: Energy procedia Vol. 27; pp. 449 - 454
• Main Authors: Gall, S., Paviet-Salomon, B., Lerat, J., Emeraud, T.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 2012
• Subjects: ion implantation; passivation; phosphorus; screen-printing; Solar cells; thermal annealing; Solar cells; thermal annealing; passivation; ion implantation; screen-printing; phosphorus
• DOI: 10.1016/j.egypro.2012.07.092
• ISSN: 1876-6102

In this paper an Excimer laser doping process is investigated from SiN:P and SiN:B PECVD layers used as dopant sources. It is demonstrated efficient doping effect with P and B with large doping range on both p+ and n+ pre-diffused regions. Doped regions are shown to be modified in term of surface concentration and depth by both laser-driven re-distribution and additional over-doping from doped dielectric source. When using laser doping from SiN:B layer, partial or complete compensation of the initial n+ emitter is highlighted. Moreover similar study with SiN:P demonstrated the potential for over-compensate the initial p+ emitter. These laser processes could be used for realization of adjacent p+ and n+ regions with controlled profiles. Moreover fluence ranges where material could be fully compensated are pointed.