Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics

• Published in: Science advances Vol. 3; no. 5; p. e1603113
• Main Authors: Zhong, Ding, Seyler, Kyle L., Linpeng, Xiayu, Cheng, Ran, Sivadas, Nikhil, Huang, Bevin, Schmidgall, Emma, Taniguchi, Takashi, Watanabe, Kenji, McGuire, Michael A., Yao, Wang, Xiao, Di, Fu, Kai-Mei C., Xu, Xiaodong
• Format: Journal Article
• Language: English
• Published: United States AAAS 01.05.2017; American Association for the Advancement of Science
• Subjects: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Engineering; SciAdv r-articles; magnetic proximity effect; van der Waals heterostructure; Exchange interaction; 2D materials; ultrafast charge transfer; Valleytronics; ferromagnetic semiconductor; monolayer semiconductor; Spintronics

A van der Waals heterostructure of monolayer WSe 2 and ferromagnetic CrI 3 enables exceptional control of valley pseudospin. The integration of magnetic material with semiconductors has been fertile ground for fundamental science as well as of great practical interest toward the seamless integration...