Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage

Bidirectional adaptive body bias (ABB) is used to compensate for die-to-die parameter variations by applying an optimum pMOS and nMOS body bias voltage to each die which maximizes the die frequency subject to a power constraint. Measurements on a 150 nm CMOS test chip which incorporates on-chip ABB,...

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Published inIEEE journal of solid-state circuits Vol. 37; no. 11; pp. 1396 - 1402
Main Authors Tschanz, J.W., Kao, J.T., Narendra, S.G., Nair, R., Antoniadis, D.A., Chandrakasan, A.P., De, V.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.11.2002
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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ISSN0018-9200
1558-173X
DOI10.1109/JSSC.2002.803949

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Abstract Bidirectional adaptive body bias (ABB) is used to compensate for die-to-die parameter variations by applying an optimum pMOS and nMOS body bias voltage to each die which maximizes the die frequency subject to a power constraint. Measurements on a 150 nm CMOS test chip which incorporates on-chip ABB, show that ABB reduces variation in die frequency by a factor of seven, while improving the die acceptance rate. An enhancement of this technique, that compensates for within-die parameter variations as well, increases the number of dies accepted in the highest frequency bin. ABB is therefore shown to provide bin split improvement in the presence of increasing process parameter variations.
AbstractList Bidirectional adaptive body bias (ABB) is used to compensate for die-to-die parameter variations by applying an optimum pMOS and nMOS body bias voltage to each die which maximizes the die frequency subject to a power constraint. Measurements on a 150 nm CMOS test chip which incorporates on-chip ABB, show that ABB reduces variation in die frequency by a factor of seven, while improving the die acceptance rate. An enhancement of this technique, that compensates for within-die parameter variations as well, increases the number of dies accepted in the highest frequency bin. ABB is therefore shown to provide bin split improvement in the presence of increasing process parameter variations.
Bidirectional adaptive body bias (ae) is used to compensate for die-to-die parameter variations by applying an optimum pMOS and nMOS body bias voltage to each die which maximizes the die frequency subject to a power constraint. Measurements on a 150 nm CMOS test chip which incorporates on-chip ae, show that ae reduces variation in die frequency by a factor of seven, while improving the die acceptance rate. An enhancement of this technique, that compensates for within-die parameter variations as well, increases the number of dies accepted in the highest frequency bin. ae is therefore shown to provide bin split improvement in the presence of increasing process parameter variations.
Author De, V.
Nair, R.
Kao, J.T.
Antoniadis, D.A.
Narendra, S.G.
Tschanz, J.W.
Chandrakasan, A.P.
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Snippet Bidirectional adaptive body bias (ABB) is used to compensate for die-to-die parameter variations by applying an optimum pMOS and nMOS body bias voltage to each...
Bidirectional adaptive body bias (ae) is used to compensate for die-to-die parameter variations by applying an optimum pMOS and nMOS body bias voltage to each...
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SubjectTerms Acceptance tests
Bias
Circuits
Clocks
CMOS
CMOS digital integrated circuits
Costs
Electric potential
Energy consumption
Frequency measurement
Microprocessors
MOS devices
Optimization
Process design
Testing
Voltage
Title Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage
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