Recent results on the degradation of white LEDs for lighting
Over the last years, GaN-based light-emitting diodes (LEDs) have been shown to be excellent candidates for the realization of high-efficiency light sources. White LEDs based on phosphor conversion can reach record efficiencies in excess of 150 lm W −1 , as demonstrated by several manufacturers and r...
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| Published in | Journal of physics. D, Applied physics Vol. 43; no. 35; p. 354007 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
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IOP Publishing
08.09.2010
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| Abstract | Over the last years, GaN-based light-emitting diodes (LEDs) have been shown to be excellent candidates for the realization of high-efficiency light sources. White LEDs based on phosphor conversion can reach record efficiencies in excess of 150 lm W
−1
, as demonstrated by several manufacturers and research groups. However, the reliability of white LEDs is still limited by a number of issues that must be addressed before these devices can find wide application in the market. This paper gives an overview on the most important physical mechanisms that limit the reliability of GaN-based LEDs for application in solid-state lighting. Starting from general considerations on the reliability of state-of-the-art white LEDs, the following degradation mechanisms are described in detail: (i) the degradation of the active layer of LEDs due to increased non-radiative recombination and reverse-bias stress; (ii) the degradation of the package/phosphor system, with subsequent worsening in the chromatic properties of the LEDs; (iii) the failure of GaN-based LEDs submitted to electrostatic discharge events. The data presented in this paper are critically compared with those reported in the literature. |
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| AbstractList | Over the last years, GaN-based LEDs have shown to be excellent candidates for the realization of highefficiency light sources. White LEDs based on phosphor conversion can reach record efficiencies in excess of 150 lm/W, as demonstrated by several manufacturers and research groups. However, the reliability of white LEDs is still limited by a number of issuesthat must be addressed before these devices can find wide application in the market. This paper gives an overview on the most important physical mechanisms that limit the reliability of GaN-based LEDs for application in solid-state lighting. Starting from general considerations on the reliability of state-of-the-art white LEDs, the following degradation mechanisms are described in detail: (i) the degradation of the active layer of LEDs, due to increased non-radiative recombination and to reverse-bias stress ; (ii) the degradation of the package/phosphor system, with subsequent worsening in the chromatic properties of the LEDs ; (iii) the failure of GaN-based LEDs submitted to Electrostatic Discharge events. The data presented in this paper are critically compared to those reported in the literature. 2 1. Introduction More that 20 % of the electricity generated in the United States is used for lighting [ 1 ] ; furthermore, worldwide lighting is responsible for the emission of more than 1900 million of tons of CO 2 per year. The use and development of highly efficient light sources would decrease of more than 50 % the worldwide lighting consumption [ 2 ], with subsequent economic and environmental benefits. Over the last decade, GaN-based LEDs have emerged as good candidates for the realization of high-efficiency light sources for general lighting. Thanks to the continuous optimization of the growth and processing procedures, blue and white LEDs with outstanding performance have been recently demonstrated: blue LEDs have a record wall-plug efficiency in excess of 60 % [ 3 ], while white LEDs can reach luminous efficacies in excess of 150 lm/W [ 4 ]. These advancements came from the improvement of the following parameters: (i) internal quantum efficiency (IQE) ; (ii) extraction efficiency ; (iii) technology used for the realization of phosphors ; (iv)packaging and assembling procedures. However, efficiency is not the sole parameter that is taken into account by consumers: LEDs are semiconductorbased devices, and for this reason they are expected to have an intrinsically high reliability, compared to conventional light sources (incandescent and fluorescent lamps). Incandescent lamps have a typical lifetime of 1000 hours, and during aging can show a 10-15 % lumen depreciation, due to the condensation of the tungsten contained in the filament on the inner part of the glass bulb. Fluorescent lamps can reach a 10000-hours lifetime, with a limited (10-20 %) lumen decrease, which is due to the degradation of the phosphors used for white light generation, and to the increase in absorption within the lamp. On the other hand, LEDs can have a significantly longer theoretical lifetime (in excess of 50000 h, [ 5]), making them good candidates for the realization of longlasting light sources. While the degradation mechanisms of conventional light sources are well known, the origin of the degradation of LEDs is still subject of intense study. Over the last few years, several authors [ 6-37 ] have investigated the origin of the degradation of LEDs submitted to accelerated ageing tests. In particular, it was shown [ 6, 7, 9, 12, 14, 17, 20 ] that stress at constant current level can determine a significant decrease in the internal efficiency of the devices: degradation was 3 attributed to the increase in the non-radiative recombination rate in the active layer of the LEDs, due to the generation/propagation of defects [ 12, 14, 17, 20 ], or to the diffusion of dopants or impurities in the quantum well (QW) region [ 34, 35 ]. It was also shown that operation at high temperature levels can induce a significant degradation of the optical characteristics of GaN-based LEDs: high-temperature degradation was attributed (i) to the worsening of the electrical properties of the ohmic contact and semiconductor material at the p-side of the diodes [ 21, 23, 31 ], due to the interaction between hydrogen and the magnesium dopant, and (ii) to the thermally-activated darkening of the package and phosphors system, with subsequent worsening of the chromatic properties of white LEDs [ 22, 24, 25, 26, 29, 33 ]. Recent studies [ 14, 36 ] highlighted that also exposure to reverse-bias can determine the degradation of GaN-based LEDs: when submitted to reverse-bias stress, devices can show a significant increase in reverse current (corresponding to a decrease in breakdown voltage), which was ascribed to the generation of point defects in proximity of pre-existing defective leakage paths. Finally, some authors [ 10, 27, 32 ] indicated that also Electrostatic Discharge (ESD) events can represent an issue for GaN-based LEDs: when submitted to ESD events, LEDs can show catastrophic failure, with subsequent shortening of the junction. Failure usually takes place in proximity of a weak region [ 37 ], corresponding to the presence of lattice or morphological defects. In this paper, we give an overview on the most important physical mechanisms that affect the reliability of stateof-the-art white LEDs. Starting from recent results obtained on commercially available power LEDs, we describe in detail the degradation processes that affect (i) the electrical and optical properties of InGaN-based LEDs, and (ii) the optical efficiency of the package/phosphors system. Finally, we describe the failure of LEDs submitted to ESD events. 4 2. Physics of LED failure 2.1 Structure of commercially available LEDs High-power LEDs are complex systems, constituted by several elements: the core of a white LED structure is a blue GaN-based LED chip, with an emission wavelength of 450-460 nm. This chip typically has an area of 1 mm 2, and is mounted on a thermally-conductive frame in a power LED package, in order to achieve a good heat dissipation. The power LED chip is usually covered with a lens, which has the twofold aim of improving the efficiency of the light extraction process, and of modifying the shape of the emitted light beam. Blue light is converted into white light by means of a phosphorous layer, which can be deposited directly on the chip (Chip Level Conversion, CLC), or incorporated in the encapsulating lens. As an example, in Figure 1 we report a Scanning Electron Microscopy (SEM) image of a commercially available power LED chip: the image was taken after the removal of the encapsulating lens, and is referred to an LED with vertical current conduction path. Commercially available power LED chips usually have a nominal operating current in the range 350-1000 mA (corresponding to current densities in the range 35-100 A/cm 2 for 1 mm 2 chips), and an operating voltage in the range 3.2-3.4 V. These devices are therefore rated for an electrical power consumption between 1 and 3.5 W. In their final application, the thermal resistance of power LEDs is in the range between 10 K/W and 20 K/W, depending on the optimization of the heat extracting path. Therefore, under normal operating conditions devices can show a certain self-heating, with a temperature increase (with respect to ambient temperature) ranging between 20 °C and 80 °C. As it will be clear in the following, the current and temperature levels reached by LEDs during ageing time can strongly influence the degradation kinetics of LEDs: for this reason an accurate definition of the operating conditions, and a careful optimization of the heat dissipation process are mandatory steps for the achievement of a long LED lifetime. As stated above, LEDs are complex systems, composed by several elements: during device lifetime, each of these components can degrade, leading to a depreciation of emission intensity and chromatic properties. The blue LED chip, if submitted to constant current stress, can show a significant optical power decrease, due to the 5 increase in non-radiative recombination rate [ 9, 12, 14, 38, 39 ]. Furthermore, operation at high current/temperature levels can lead to significant modifications in the chromatic properties of LEDs, due to the darkening of the phosphorous material and to the worsening of the reflective properties of the package [ 22, 25, 29 ]. Finally, the lens- usually adopted to improve the efficiency of the light extraction process- can also show a significant darkening as a consequence of device ageing, both due to the high temperatures reached during LED operation, and to the short wavelengths emitted by the device itself [ 8 ]. Lifetime tests are usually carried out by submitting LEDs to accelerated ageing, under relatively high current and/or temperature levels. Under these conditions, it is quite difficult to understand whether degradation processes are mainly due to the flow of a relatively high current density through the junction, or to the high temperatures reached by the devices during operation. Furthermore, when the many components of and LED structure degrade simultaneously, it is quite difficult to understand whether degradation is mainly due to the ageing of the blue LED chip, or to processes related to the package/phosphors/lens system. In order to achieve a good understanding of the physical processes that limit the reliability of advanced LED structures, it is therefore necessary to develop specific testing procedures, capable of separately analyzing the degradation of the individual components of an LED during ageing time. In the following we will describe some general results on the reliability of state-of-the-art white LEDs, and more specific data concerning the degradation of the blue LED chip (weaknesses of InGaN-LED technology) and of the package/phosphors system. 2.2 Reliability testing of high-power white LEDs A Over the last years, GaN-based light-emitting diodes (LEDs) have been shown to be excellent candidates for the realization of high-efficiency light sources. White LEDs based on phosphor conversion can reach record efficiencies in excess of 150 lm W −1 , as demonstrated by several manufacturers and research groups. However, the reliability of white LEDs is still limited by a number of issues that must be addressed before these devices can find wide application in the market. This paper gives an overview on the most important physical mechanisms that limit the reliability of GaN-based LEDs for application in solid-state lighting. Starting from general considerations on the reliability of state-of-the-art white LEDs, the following degradation mechanisms are described in detail: (i) the degradation of the active layer of LEDs due to increased non-radiative recombination and reverse-bias stress; (ii) the degradation of the package/phosphor system, with subsequent worsening in the chromatic properties of the LEDs; (iii) the failure of GaN-based LEDs submitted to electrostatic discharge events. The data presented in this paper are critically compared with those reported in the literature. |
| Author | Zanoni, E Meneghini, M Meneghesso, G |
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| Snippet | Over the last years, GaN-based light-emitting diodes (LEDs) have been shown to be excellent candidates for the realization of high-efficiency light sources.... Over the last years, GaN-based LEDs have shown to be excellent candidates for the realization of highefficiency light sources. White LEDs based on phosphor... |
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| Title | Recent results on the degradation of white LEDs for lighting |
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