Kinking of GaP Nanowires Grown in an In Situ (S)TEM Gas Cell Holder
Nanowires are a promising structure to create new defect‐free heterostructures and optoelectronic devices. GaP nanowires grown via the VLS mechanism using tertiary‐butyl phosphine (TBP) and trimethylgallium (TMGa) as precursors in an in situ closed gas cell heating holder are shown. This holder is a...
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Published in | Advanced materials interfaces Vol. 10; no. 17 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
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Weinheim
John Wiley & Sons, Inc
01.06.2023
Wiley-VCH |
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Abstract | Nanowires are a promising structure to create new defect‐free heterostructures and optoelectronic devices. GaP nanowires grown via the VLS mechanism using tertiary‐butyl phosphine (TBP) and trimethylgallium (TMGa) as precursors in an in situ closed gas cell heating holder are shown. This holder is a model system to investigate the processes in metal‐organic vapour phase epitaxy (MOVPE). GaP nanowires change their growth direction after random distances by producing kinks. Statistics of these kink angles show dominant values of around 70.5°, 109.5°, and 123.7°. A custom holder tip capable of holding a single heating chip is used to perform scanning precession electron diffraction (SPED) measurements on the nanowire kinks. The results show that the predominant kink angles result from micro twins of first and second order. Understanding the defect formation and resulting geometry changes in GaP nanowires can lead to increased control over their shape during growth and mark a huge step toward applicable nanowire devices.
GaP nanowires change their growth direction after random distances by producing kinks (red arrows). Statistics of these kink angles show dominant values of around 70.5°, 109.5°, and 123.7°. The origin of these kinks is investigated by scanning precession electron diffraction. The results show that the predominant kink angles result from micro twins of first and second order. |
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AbstractList | Abstract Nanowires are a promising structure to create new defect‐free heterostructures and optoelectronic devices. GaP nanowires grown via the VLS mechanism using tertiary‐butyl phosphine (TBP) and trimethylgallium (TMGa) as precursors in an in situ closed gas cell heating holder are shown. This holder is a model system to investigate the processes in metal‐organic vapour phase epitaxy (MOVPE). GaP nanowires change their growth direction after random distances by producing kinks. Statistics of these kink angles show dominant values of around 70.5°, 109.5°, and 123.7°. A custom holder tip capable of holding a single heating chip is used to perform scanning precession electron diffraction (SPED) measurements on the nanowire kinks. The results show that the predominant kink angles result from micro twins of first and second order. Understanding the defect formation and resulting geometry changes in GaP nanowires can lead to increased control over their shape during growth and mark a huge step toward applicable nanowire devices. Nanowires are a promising structure to create new defect‐free heterostructures and optoelectronic devices. GaP nanowires grown via the VLS mechanism using tertiary‐butyl phosphine (TBP) and trimethylgallium (TMGa) as precursors in an in situ closed gas cell heating holder are shown. This holder is a model system to investigate the processes in metal‐organic vapour phase epitaxy (MOVPE). GaP nanowires change their growth direction after random distances by producing kinks. Statistics of these kink angles show dominant values of around 70.5°, 109.5°, and 123.7°. A custom holder tip capable of holding a single heating chip is used to perform scanning precession electron diffraction (SPED) measurements on the nanowire kinks. The results show that the predominant kink angles result from micro twins of first and second order. Understanding the defect formation and resulting geometry changes in GaP nanowires can lead to increased control over their shape during growth and mark a huge step toward applicable nanowire devices. Nanowires are a promising structure to create new defect‐free heterostructures and optoelectronic devices. GaP nanowires grown via the VLS mechanism using tertiary‐butyl phosphine (TBP) and trimethylgallium (TMGa) as precursors in an in situ closed gas cell heating holder are shown. This holder is a model system to investigate the processes in metal‐organic vapour phase epitaxy (MOVPE). GaP nanowires change their growth direction after random distances by producing kinks. Statistics of these kink angles show dominant values of around 70.5°, 109.5°, and 123.7°. A custom holder tip capable of holding a single heating chip is used to perform scanning precession electron diffraction (SPED) measurements on the nanowire kinks. The results show that the predominant kink angles result from micro twins of first and second order. Understanding the defect formation and resulting geometry changes in GaP nanowires can lead to increased control over their shape during growth and mark a huge step toward applicable nanowire devices. GaP nanowires change their growth direction after random distances by producing kinks (red arrows). Statistics of these kink angles show dominant values of around 70.5°, 109.5°, and 123.7°. The origin of these kinks is investigated by scanning precession electron diffraction. The results show that the predominant kink angles result from micro twins of first and second order. Abstract Nanowires are a promising structure to create new defect‐free heterostructures and optoelectronic devices. GaP nanowires grown via the VLS mechanism using tertiary‐butyl phosphine (TBP) and trimethylgallium (TMGa) as precursors in an in situ closed gas cell heating holder are shown. This holder is a model system to investigate the processes in metal‐organic vapour phase epitaxy (MOVPE). GaP nanowires change their growth direction after random distances by producing kinks. Statistics of these kink angles show dominant values of around 70.5°, 109.5°, and 123.7°. A custom holder tip capable of holding a single heating chip is used to perform scanning precession electron diffraction (SPED) measurements on the nanowire kinks. The results show that the predominant kink angles result from micro twins of first and second order. Understanding the defect formation and resulting geometry changes in GaP nanowires can lead to increased control over their shape during growth and mark a huge step toward applicable nanowire devices. |
Author | Gruber, Felix Widemann, Maximilian Ahmed, Shamail Krug, David Beyer, Andreas Volz, Kerstin Demuth, Thomas |
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Cites_doi | 10.1038/nphoton.2009.184 10.1088/0034-4885/73/11/114501 10.1021/nn300966j 10.1021/nl203213d 10.1002/smll.201501909 10.1186/1556-276X-9-211 10.1126/science.1192033 10.1166/jnn.2010.2157 10.1017/S1431927618003422 10.1214/aos/1176348768 10.1016/j.micron.2012.03.003 10.1515/zpch-1900-3431 10.1038/nature17148 10.1021/jp0672205 10.1017/S1431927617012351 10.1021/nl902013g 10.1021/cm300570n 10.1134/S1063783410070309 10.1038/nmat1688 10.1063/1.2089157 10.1021/nl8011006 10.1524/zkri.2013.1565 10.1002/adma.201904359 10.1524/zkri.2010.1205 10.1002/pssr.201307109 10.1111/jmi.12065 10.1007/s11051-019-4577-3 10.1038/nnano.2009.304 10.1039/C5CE00773A 10.1017/S1431927612001249 10.1021/acsomega.8b00063 10.1007/s13280-012-0266-5 10.1063/1.1363692 10.1063/1.1753975 10.1038/nmat1677 10.1016/j.jcrysgro.2010.10.036 |
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Snippet | Nanowires are a promising structure to create new defect‐free heterostructures and optoelectronic devices. GaP nanowires grown via the VLS mechanism using... Abstract Nanowires are a promising structure to create new defect‐free heterostructures and optoelectronic devices. GaP nanowires grown via the VLS mechanism... Abstract Nanowires are a promising structure to create new defect‐free heterostructures and optoelectronic devices. GaP nanowires grown via the VLS mechanism... |
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SubjectTerms | Angles (geometry) Defects Electron diffraction Epitaxial growth Gallium phosphides Heating Heterostructures Kinking Nanowires Optoelectronic devices Phosphines semiconductors transmission electron microscope twins Vapor phase epitaxy Vapor phases |
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Title | Kinking of GaP Nanowires Grown in an In Situ (S)TEM Gas Cell Holder |
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