Composition Analysis by STEM-EDX of Ternary Semiconductors by Internal References

• Published in: Microscopy and microanalysis Vol. 28; no. 1; pp. 61 - 69
• Main Authors: Nilsen, Julie Stene, van Helvoort, Antonius T. J.
• Format: Journal Article
• Language: English
• Published: New York, USA Cambridge University Press 01.02.2022; Oxford University Press
• Subjects: Absorption; Accuracy; Composition effects; Gallium arsenide; Materials Science Applications; Mathematical analysis; Methods; Quantitative analysis; Scanning transmission electron microscopy; Semiconductors; Sensors; Spectrum analysis; Transmission electron microscopy; X-ray spectroscopy; X-rays; EDX; quantification; absorption; compound semiconductors

A practical method to determine the composition within ternary heterostructured semiconductor compounds using energy-dispersive X-ray spectroscopy in scanning transmission electron microscopy is presented. The method requires minimal external input factors such as user-determined or calculated sensi...