Memory technology-a primer for material scientists

From our own experience, we know that there is a gap to bridge between the scientists focused on basic material research and their counterparts in a close-to-application community focused on identifying and solving final technological and engineering challenges. In this review, we try to provide an...

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Published inReports on progress in physics Vol. 83; no. 8; pp. 86501 - 86537
Main Authors Schenk, T, Pešić, M, Slesazeck, S, Schroeder, U, Mikolajick, T
Format Journal Article
LanguageEnglish
Published England IOP Publishing 01.08.2020
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ISSN0034-4885
1361-6633
1361-6633
DOI10.1088/1361-6633/ab8f86

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Abstract From our own experience, we know that there is a gap to bridge between the scientists focused on basic material research and their counterparts in a close-to-application community focused on identifying and solving final technological and engineering challenges. In this review, we try to provide an easy-to-grasp introduction to the field of memory technology for materials scientists. An understanding of the big picture is vital, so we first provide an overview of the development and architecture of memories as part of a computer and call attention to some basic limitations that all memories are subject to. As any new technology has to compete with mature existing solutions on the market, today's mainstream memories are explained, and the need for future solutions is highlighted. The most prominent contenders in the field of emerging memories are introduced and major challenges on their way to commercialization are elucidated. Based on these discussions, we derive some predictions for the memory market to conclude the paper.
AbstractList From our own experience, we know that there is a gap to bridge between the scientists focused on basic material research and their counterparts in a close-to-application community focused on identifying and solving final technological and engineering challenges. In this review, we try to provide an easy-to-grasp introduction to the field of memory technology for materials scientists. An understanding of the big picture is vital, so we first provide an overview of the development and architecture of memories as part of a computer and call attention to some basic limitations that all memories are subject to. As any new technology has to compete with mature existing solutions on the market, today's mainstream memories are explained, and the need for future solutions is highlighted. The most prominent contenders in the field of emerging memories are introduced and major challenges on their way to commercialization are elucidated. Based on these discussions, we derive some predictions for the memory market to conclude the paper.From our own experience, we know that there is a gap to bridge between the scientists focused on basic material research and their counterparts in a close-to-application community focused on identifying and solving final technological and engineering challenges. In this review, we try to provide an easy-to-grasp introduction to the field of memory technology for materials scientists. An understanding of the big picture is vital, so we first provide an overview of the development and architecture of memories as part of a computer and call attention to some basic limitations that all memories are subject to. As any new technology has to compete with mature existing solutions on the market, today's mainstream memories are explained, and the need for future solutions is highlighted. The most prominent contenders in the field of emerging memories are introduced and major challenges on their way to commercialization are elucidated. Based on these discussions, we derive some predictions for the memory market to conclude the paper.
From our own experience in the group, we know that there is quite a gap to bridge between scientists focused on basic material research and their counterparts in a close-to-application community focused on identifying and solving final technological and engineering challenges. In this review, we try to provide an easy-to-grasp introduction to the field of memory technology for materials scientists. As an understanding of the big picture is vital, we first provide an overview about the development and architecture of memories as part of a computer and point out some basic limitations that all memories are subject to. As any new technology has to compete with mature existing solutions on the market, today's mainstream memories are explained and the need for future solutions is highlighted. The most prominent contenders in the field of emerging memories are introduced and major challenges on their way to commercialization are elucidated. Based on these discussions, we derive some predictions for the memory market to conclude the paper.
From our own experience, we know that there is a gap to bridge between the scientists focused on basic material research and their counterparts in a close-to-application community focused on identifying and solving final technological and engineering challenges. In this review, we try to provide an easy-to-grasp introduction to the field of memory technology for materials scientists. An understanding of the big picture is vital, so we first provide an overview of the development and architecture of memories as part of a computer and call attention to some basic limitations that all memories are subject to. As any new technology has to compete with mature existing solutions on the market, today's mainstream memories are explained, and the need for future solutions is highlighted. The most prominent contenders in the field of emerging memories are introduced and major challenges on their way to commercialization are elucidated. Based on these discussions, we derive some predictions for the memory market to conclude the paper.
Author Slesazeck, S
Schroeder, U
Schenk, T
Pešić, M
Mikolajick, T
Author_xml – sequence: 1
  givenname: T
  orcidid: 0000-0003-2933-1076
  surname: Schenk
  fullname: Schenk, T
  email: tony.schenk@list.lu
  organization: Luxembourg Institute of Science and Technology (LIST) Materials Research and Technology Department, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
– sequence: 2
  givenname: M
  orcidid: 0000-0002-1788-8945
  surname: Pešić
  fullname: Pešić, M
  organization: Applied Materials Inc. , 3325 Scott Blvd Santa Clara, CA 95054, United States of America
– sequence: 3
  givenname: S
  orcidid: 0000-0002-0414-0321
  surname: Slesazeck
  fullname: Slesazeck, S
  organization: NaMLab gGmbH , Noethnitzer Str. 64, D-01187 Dresden, Germany
– sequence: 4
  givenname: U
  orcidid: 0000-0002-6824-2386
  surname: Schroeder
  fullname: Schroeder, U
  organization: NaMLab gGmbH , Noethnitzer Str. 64, D-01187 Dresden, Germany
– sequence: 5
  givenname: T
  orcidid: 0000-0003-3814-0378
  surname: Mikolajick
  fullname: Mikolajick, T
  organization: TU Dresden Chair of Nanoelectronic Materials, D-01062 Dresden, Germany
BackLink https://www.ncbi.nlm.nih.gov/pubmed/32357345$$D View this record in MEDLINE/PubMed
BookMark eNp9kD1PwzAQhi1URD9gZ0LZYCD0HCcXZ0QVX1IRC8yW49rgKomL7Q799zRqy4BQp9OdnveV7hmTQec6TcglhTsKnE8pQ5oiMjaVNTccT8jo9zQgIwCWpznnxZCMQ1gCUMqz6owMWcaKkuXFiGSvunV-k0StvjrXuM9NKpOVt632iXE-aWXU3somCcrqLtoQwzk5NbIJ-mI_J-Tj8eF99pzO355eZvfzVOUUY0qxhEVVZ8jqjGmqoDaQl6ouleGgKZSS5bzSiAZQSlkZIxGgWlCkVV3wnE3Iza535d33WocoWhuUbhrZabcOImNVicgZ9ujVHl3XrV6I_gHpN-Lw5xbAHaC8C8FrI5SNMlrXRS9tIyiIXqjo7YnentgJ3QbhT_DQfSRyu4tYtxJLt_bd1tIx_Pof3G8XzgQXwLEAKlYLw34A6zCR1A
CODEN RPPHAG
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Cites_doi 10.1063/1.3609875
10.1088/1361-6528/ab2084
10.1016/j.mee.2018.01.009
10.1126/science.1145799
10.1109/ICEEE2.2018.8391356
10.1109/jssc.2012.2213513
10.1109/jproc.2003.811702
10.1116/1.1492715
10.1080/10584587.2011.573739
10.1063/1.2138365
10.1149/07505.0041ecst
10.1038/nmat3669
10.1007/978-3-319-15290-5
10.1109/ISSCC.2019.8662444
10.1109/ISSCC.2019.8662445
10.1142/9789814740487_0008
10.1109/NAS.2015.7255200
10.1038/s41928-018-0092-2
10.1109/NVMT.1996.534686
10.1109/IMW.2018.8388831
10.1080/00150199008008233
10.1007/978-981-13-0599-3_9
10.1109/JPROC.2017.2697000
10.1021/acsami.7b00776
10.1109/jssc.2004.825241
10.1016/j.adhoc.2012.02.016
10.1103/revmodphys.76.323
10.1002/adfm.201303520
10.1109/IMW.2019.8739742
10.1109/jetcas.2016.2547718
10.1109/jproc.2012.2190369
10.1080/00150193.2015.1012401
10.23919/VLSIT.2017.7998186
10.1002/adma.201501167
10.4028/www.scientific.net/ast.95.136
10.1109/IBCAST.2014.6778179
10.1016/j.progsolidstchem.2011.02.001
10.1109/IEDM.2008.4796676
10.1016/j.mee.2005.04.084
10.1007/978-94-024-0841-6_1
10.1063/1.126902
10.1109/IEDM19573.2019.8993504
10.1109/tvlsi.2017.2776954
10.1063/1.3319591
10.1109/IEDM.2018.8614635
10.1039/c8nr07135g
10.1109/IMW.2017.7939066
10.1109/jssc.2015.2498302
10.1016/j.mser.2014.06.002
10.1088/0034-4885/33/3/306
10.1109/IEDM.2001.979636
10.1557/mrs.2018.95
10.1088/0034-4885/75/7/076502
10.1109/t-ed.1964.15319
10.1145/2695533.2695554
10.1149/2.0081505jss
10.1109/jproc.2016.2590142
10.1088/0268-1242/31/11/113006
10.1063/1.3041628
10.1002/aelm.201400056
10.1109/mspec.2007.4337663
10.1109/tc.2015.2417540
10.1134/s0021364015200047
10.1109/IEDM.2017.8268471
10.1109/IEDM.2018.8614694
10.1038/ncomms5289
10.1063/1.369931
10.1557/mrs.2011.356
10.1002/adfm.201603182
10.1109/IEDM.2003.1269376
10.1103/physrevb.72.125341
10.1109/led.2013.2290117
10.1038/nnano.2015.41
10.1063/1.4864653
10.1063/1.2976780
10.1109/IEDM.2011.6131606
10.1109/5.622505
10.1143/JJAP.37.2079
10.1021/acsami.7b15110
10.1109/led.2002.1015207
10.1002/adfm.201000599
10.1109/ISSCC.2018.8310321
10.1063/1.4863407
10.23919/VLSIT.2017.7998165
10.1002/pssb.200404935
10.23919/VLSIT.2017.7998174
10.1021/acsami.6b13866
10.1109/IEDM.2016.7838026
10.1049/el:19660238
10.1049/ree.1967.0069
10.1109/jproc.2010.2070050
10.1063/1.1713870
10.1109/IEDM.2016.7838398
10.1007/978-3-540-34591-6_5
10.1038/nmat1359
10.1109/jproc.2015.2433311
10.1109/NVMTS.2011.6137107
10.1103/physrevlett.64.2304
10.1109/led.2002.807694
10.1109/IEDM.2013.6724605
10.1557/mrs.2018.3
10.1145/1555815.1555790
10.1109/jproc.2003.811807
10.1109/40.285230
10.1002/0470068329
10.1007/978-3-319-15180-9
10.3390/computers6040028
10.1109/EDCT.2018.8405079
10.1021/acsami.5b11653
10.1063/1.1343892
10.1109/ISSCC.2014.6757458
10.1038/nmat3070
10.1109/lmag.2018.2789888
10.1016/j.jeurceramsoc.2019.05.065
10.1126/science.1110549
10.1063/1.3587452
10.1063/1.365499
10.3139/146.110261
10.1109/IEDM.2016.7838397
10.1109/ted.2004.825805
10.1088/1361-6528/aaaacb
10.1103/physrevlett.67.3598
10.1109/.2006.1629477
10.1080/00076791.2013.771332
10.1145/977091.977115
10.1063/1.360122
10.1109/tct.1971.1083337
10.1063/1.4929512
10.1126/science.289.5476.94
10.1016/j.sysarc.2010.12.003
10.1109/ISSCC.2016.7417947
10.1109/85.238389
10.1201/b20044-3
10.1109/IEDM.2015.7409777
10.1007/978-3-319-69907-3_3
10.1109/ISSCC.2019.8662443
10.1143/JJAP.39.770
10.1109/5.883319
10.1109/VLSIT.2007.4339704
10.1109/mssc.2016.2546199
10.1143/JJAP.5.349
10.1109/IEDM.2018.8614620
10.1109/VLSI-TSA.2018.8403848
10.1088/0268-1242/30/11/115014
10.1016/0038-1101(64)90131-5
10.1557/mrs.2014.139
10.7567/jjaps.26s4.61
10.1109/jproc.1998.658762
10.1149/08603.0035ecst
10.1109/ted.2012.2218607
10.1109/IMW.2019.8739765
10.1063/1.5042413
10.1038/nnano.2014.8
10.1080/01457632.2014.939032
10.1109/ESSDERC.2011.6044239
10.1109/tns.2012.2224377
10.1016/j.sse.2015.08.012
10.1007/3-540-45852-2_1
10.1109/jssc.1974.1050511
10.1103/physrevapplied.12.031001
10.1109/ICCD.2012.6378623
10.1109/IRPS.2016.7574617
10.1021/acsami.8b08967
10.1147/rd.524.0439
10.1103/physrevb.39.4828
10.1166/jnn.2012.6651
10.1515/rest.2011.004
10.1109/ISSCC.2019.8662393
10.1039/c8fd00127h
10.1038/nmat2748
10.1557/mrs.2018.93
10.1109/IEDM.2015.7409618
10.1109/IEDM.2015.7409666
10.1063/1.4972786
10.1051/epjap:2004206
10.1016/B978-0-08-102430-0.00019-X
10.1038/nmat2330
10.1063/1.126464
10.1063/1.97617
10.1063/1.2337361
10.1557/mrs.2015.195
10.1002/adfm.201303365
10.1557/mrc.2018.175
10.1109/IEDM.2003.1269271
10.1109/ESSDERC.2018.8486916
10.1088/0268-1242/31/11/113001
10.1109/ms.2014.39
10.1109/ISSCC.1995.535462
10.1109/VLSI-TSA.2014.6839696
10.1002/adma.201904123
10.2307/j.ctt2005wh5.27
10.1007/978-3-662-04307-3
10.1002/adfm.201000265
10.1109/IEDM.2005.1609463
10.1038/nmat1860
10.1016/j.mattod.2017.07.007
10.1103/physrevlett.61.2472
10.1557/proc-688-c6.5.1
10.1088/0268-1242/31/6/063002
10.1021/acsami.8b11681
10.3390/s16060904
10.1080/14786436708229693
10.1063/1.3543837
10.1103/physrevlett.21.1450
10.1103/physrevb.44.7131
10.1038/s41467-020-15159-2
10.1016/j.sse.2016.07.006
10.1109/mm.2019.2897560
10.1080/09506608.2016.1204097
10.1016/s1369-7021(08)70119-6
10.1016/j.future.2013.01.010
10.1109/mc.2015.12
10.1109/IEDM.2002.1175811
10.1557/mrs.2018.96
10.1126/science.1182769
10.1038/nnano.2014.324
10.1109/IMW.2015.7150303
10.1038/nature05148
10.1109/jproc.2003.818323
10.1109/jssc.2016.2597822
10.1063/1.5060676
10.1016/j.sse.2014.06.009
10.1080/02670836.2017.1341723
10.1186/s11671-015-0880-9
10.1021/am5021149
10.1002/adem.200800294
10.1109/5.915374
10.1109/IMFEDK.2018.8581955
10.1147/rd.524.0449
10.1109/IMW.2018.8388832
10.1063/1.1361065
10.1109/IEDM.2018.8614566
10.1109/ICICDT.2018.8399771
10.1016/0375-9601(75)90174-7
10.1002/pssr.201105420
10.1016/0038-1101(68)90092-0
ContentType Journal Article
Copyright 2020 IOP Publishing Ltd
2020 IOP Publishing Ltd.
Copyright_xml – notice: 2020 IOP Publishing Ltd
– notice: 2020 IOP Publishing Ltd.
DBID AAYXX
CITATION
NPM
7X8
DOI 10.1088/1361-6633/ab8f86
DatabaseName CrossRef
PubMed
MEDLINE - Academic
DatabaseTitle CrossRef
PubMed
MEDLINE - Academic
DatabaseTitleList MEDLINE - Academic
PubMed

Database_xml – sequence: 1
  dbid: NPM
  name: PubMed
  url: https://proxy.k.utb.cz/login?url=http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed
  sourceTypes: Index Database
DeliveryMethod fulltext_linktorsrc
Discipline Physics
DocumentTitleAlternate Memory technology-a primer for material scientists
EISSN 1361-6633
ExternalDocumentID 32357345
10_1088_1361_6633_ab8f86
ropab8f86
Genre Journal Article
GrantInformation_xml – fundername: Luxembourg Institute of Science and Technology
  grantid: SF_MRT_CSDFO
– fundername: Deutsche Forschungsgemeinschaft
  grantid: MI 1247/11-2
  funderid: https://doi.org/10.13039/501100001659
– fundername: Fonds National de la Recherche Luxembourg
  grantid: FNR/P12/4853155/Kreisel
  funderid: https://doi.org/10.13039/501100001866
GroupedDBID -~X
123
1JI
4.4
5B3
5PX
5VS
5ZH
7.M
7.Q
AAGCD
AAGID
AAJIO
AAJKP
AATNI
ABCXL
ABHWH
ABJNI
ABQJV
ACAFW
ACBEA
ACGFO
ACGFS
ACHIP
ACNCT
AEFHF
AENEX
AFYNE
AKPSB
ALMA_UNASSIGNED_HOLDINGS
AOAED
ASPBG
ATQHT
AVWKF
AZFZN
CBCFC
CEBXE
CJUJL
CRLBU
CS3
DU5
EBS
EDWGO
EMSAF
EPQRW
EQZZN
HAK
IHE
IJHAN
IOP
IZVLO
KOT
LAP
M45
N5L
N9A
P2P
PJBAE
R4D
RIN
RKQ
RNS
RO9
ROL
RPA
SY9
TN5
UCJ
W28
WH7
XPP
ZMT
~02
AAYXX
ADEQX
CITATION
NPM
7X8
ID FETCH-LOGICAL-c416t-1670d9b263b23e1c0bf047cb7cf80e107a3489e66f06aaa9ffa6009d1619b5843
IEDL.DBID IOP
ISSN 0034-4885
1361-6633
IngestDate Thu Jul 10 23:21:21 EDT 2025
Thu Jan 02 22:59:40 EST 2025
Thu Apr 24 23:12:48 EDT 2025
Tue Jul 01 02:52:56 EDT 2025
Wed Aug 21 03:34:39 EDT 2024
Thu Jan 07 15:20:51 EST 2021
IsPeerReviewed true
IsScholarly true
Issue 8
Keywords market trends
storage class memory
review
random-access memory
non-volatile memory
emerging memory
hard-disk drive
Language English
License 2020 IOP Publishing Ltd.
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c416t-1670d9b263b23e1c0bf047cb7cf80e107a3489e66f06aaa9ffa6009d1619b5843
Notes ROPP-101270.R1
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ORCID 0000-0002-6824-2386
0000-0003-3814-0378
0000-0002-0414-0321
0000-0002-1788-8945
0000-0003-2933-1076
PMID 32357345
PQID 2397668364
PQPubID 23479
PageCount 37
ParticipantIDs proquest_miscellaneous_2397668364
pubmed_primary_32357345
crossref_citationtrail_10_1088_1361_6633_ab8f86
crossref_primary_10_1088_1361_6633_ab8f86
iop_journals_10_1088_1361_6633_ab8f86
ProviderPackageCode CITATION
AAYXX
PublicationCentury 2000
PublicationDate 2020-08-01
PublicationDateYYYYMMDD 2020-08-01
PublicationDate_xml – month: 08
  year: 2020
  text: 2020-08-01
  day: 01
PublicationDecade 2020
PublicationPlace England
PublicationPlace_xml – name: England
PublicationTitle Reports on progress in physics
PublicationTitleAbbrev RoPP
PublicationTitleAlternate Rep. Prog. Phys
PublicationYear 2020
Publisher IOP Publishing
Publisher_xml – name: IOP Publishing
References Biswas A (52) 2016
230
110
231
Smith T (322) 2001
111
232
233
234
Jeong D S (159) 2012; 75
235
MRAM-Info (226) 2006
236
116
117
238
Max B (294) 2018
118
239
Texas Instruments (247) 2003
Samsung Electronics (133) 2019
Karlsson C (323) 2014
Zhirnov V (29) 2012
13
(24) 2015
15
16
17
19
Dearnaley G (147) 1970; 33
240
Pešić M (307) 2017
McKee S A (324) 2004
241
121
242
122
243
123
244
3
124
245
4
Kearns G S (14) 2016; 8
5
6
128
249
9
Wu S-Y (49) 2013
Fox G R (248) 2006
Adesto Technologies Corporation (194) 2019
20
Ho P W C (171) 2016; 37
21
22
23
25
26
Jameson J R (193) 2016; 75
27
28
Schenk T (260) 2016
Koo J-M (263) 2005
250
251
131
252
Darcy M (12) 2006
132
253
134
255
135
256
136
257
258
138
139
Müller J (274) 2012
30
32
Waser R (142) 2008
33
34
Tang T (188) 2017
Mocuta A (56) 2018
39
Waser R ed Waser R (36) 2012
Panasonic Corporation (163) 2013
Savtchenko L (225) 2003
Makarov A (219) 2016; 31
140
261
141
262
Johnson R C (289) 2016
143
264
Francois T (277) 2019
144
265
145
266
Li H (55) 2015
267
268
148
269
149
40
41
42
Dieny B (221) 2012
Buck D A (259) 1952
44
45
Kau D (214) 2009
46
47
48
TechInsights (127) 2017
Wylezich H (167) 2015; 30
Ramaswamy N (168) 2017
271
151
272
152
153
(112) 2017
154
Sony (114) 2020
155
276
156
157
278
Compagnoni C M (72) 2017; 99
158
Mistry K (313) 2007
50
51
53
Gilmer D C (319) 2018; 29
57
58
Ielmini D (165) 2016; 31
Hession D (125) 2014; 4
Bulletin Texas Instruments (246) 2009
280
160
281
161
282
162
283
284
164
285
286
166
288
Slesazeck S (146) 2019; 30
169
61
62
64
65
Tsuruoka T (195) 2011; 22
66
Ramaswamy N (82) 2013
67
68
Micheloni R (76) 2008
170
291
172
Kozicki M N (191) 2016; 31
295
175
296
176
297
177
298
178
Pesic M (287) 2016
299
179
Rodríguez Contreras J (279) 2003
70
Koh Y (74) 2009
71
73
75
77
78
79
Gill M (212) 2002
Goda A (83) 2012
180
181
Amin A (59) 2017; 6
183
184
185
186
187
Molas G (182) 2018; 86
Schroeder U (38) 2012
Yadav S (60) 2013; 3
80
Intel (126) 2015
Sawamura K (150) 1966; 5
Ovshinsky S R (200) 1966
85
86
87
190
van den Brink A (229) 2016
192
Shin Y (88) 2005
Buragohain P (290) 2017
196
197
198
199
Hutchby J (35) 2010
Mitsuhashi Y (120) 1998; 37
90
Lue H-T (89) 2005
91
92
93
94
95
96
97
98
99
Dünkel S (275) 2017
Burr G F (7) 2010
Böscke T S (292) 2010
Kim K (69) 2007
Ohta T (204) 2000; 39
Mikolajick T (1) 2006
Polakowski P (273) 2014
Lee K-J (213) 2007
Fujii S (293) 2016
Aritome S (10) 2016
Khurshudov A (119) 2001
Hwang (ed) C S (ed) (43) 2013
Prall K (31) 2017
Florent K (317) 2018
Wu J Y (129) 2018
Dolle M ed Waser R (37) 2012
Sony (115) 2020
300
301
302
303
304
305
306
308
309
Saito S (113) 2018
Schenk T (8) 2015
310
311
312
Varvaro G (100) 2016
Kim H (11) 2017
314
315
Müller J (270) 2015; 4
316
318
Tan S (81) 2015
Symanczyk R (189) 2003
Mähne H (174) 2013
Mikolajick T (321) 2002
320
Arnaud F (130) 2018
MRAM-Info (227) 2019
201
202
Natarajan S (54) 2014
203
325
205
326
206
327
207
328
208
329
209
Govoreanu B (173) 2011
330
210
211
Masuoka F (63) 1984
Aazam M (18) 2014
216
217
218
Yamaguchi T (254) 2018
Whang S J (84) 2010
Carissimi M (215) 2019
Fukami S (237) 2009
220
101
222
102
Jameson J R (137) 2018
223
103
224
104
105
106
107
228
108
109
Waser R (2) 2012
References_xml – ident: 41
  doi: 10.1063/1.3609875
– volume: 30
  issn: 0957-4484
  year: 2019
  ident: 146
  publication-title: Nanotechnology
  doi: 10.1088/1361-6528/ab2084
– ident: 187
  doi: 10.1016/j.mee.2018.01.009
– ident: 234
  doi: 10.1126/science.1145799
– year: 2018
  ident: 254
  publication-title: IEEE Int. Electron Devices Meeting (IEDM)
– ident: 57
  doi: 10.1109/ICEEE2.2018.8391356
– ident: 53
  doi: 10.1109/jssc.2012.2213513
– ident: 61
  doi: 10.1109/jproc.2003.811702
– ident: 156
  doi: 10.1116/1.1492715
– ident: 268
  doi: 10.1080/10584587.2011.573739
– ident: 280
  doi: 10.1063/1.2138365
– volume: 75
  start-page: 41
  issn: 1938-5862
  year: 2016
  ident: 193
  publication-title: Soc. ECS Trans.
  doi: 10.1149/07505.0041ecst
– year: 2015
  ident: 8
  publication-title: Materials Research Society Fall Meeting
– year: 2016
  ident: 229
– volume: 8
  start-page: 1
  year: 2016
  ident: 14
  publication-title: J. Forensic Investigative Account.
– year: 2007
  ident: 69
  publication-title: IEEE Int. Electron Devices Meeting (IEDM)
– ident: 283
  doi: 10.1038/nmat3669
– ident: 28
  doi: 10.1007/978-3-319-15290-5
– ident: 131
  doi: 10.1109/ISSCC.2019.8662444
– ident: 93
  doi: 10.1109/ISSCC.2019.8662445
– ident: 39
  doi: 10.1142/9789814740487_0008
– start-page: 336
  year: 2015
  ident: 81
  publication-title: IEEE Int. Conf. on Networking, Architecture and Storage (NAS)
  doi: 10.1109/NAS.2015.7255200
– year: 2018
  ident: 130
  publication-title: IEEE Int. Electron Devices Meeting (IEDM)
– ident: 184
  doi: 10.1038/s41928-018-0092-2
– ident: 222
  doi: 10.1109/NVMT.1996.534686
– ident: 95
  doi: 10.1109/IMW.2018.8388831
– ident: 243
  doi: 10.1080/00150199008008233
– ident: 68
  doi: 10.1007/978-981-13-0599-3_9
– ident: 71
  doi: 10.1109/JPROC.2017.2697000
– year: 2013
  ident: 163
– ident: 252
  doi: 10.1021/acsami.7b00776
– ident: 244
  doi: 10.1109/jssc.2004.825241
– ident: 17
  doi: 10.1016/j.adhoc.2012.02.016
– ident: 228
  doi: 10.1103/revmodphys.76.323
– ident: 166
  doi: 10.1002/adfm.201303520
– ident: 296
  doi: 10.1109/IMW.2019.8739742
– ident: 199
  doi: 10.1109/jetcas.2016.2547718
– year: 1966
  ident: 200
  publication-title: U.S. Patent
– ident: 170
  doi: 10.1109/jproc.2012.2190369
– ident: 272
  doi: 10.1080/00150193.2015.1012401
– year: 2012
  ident: 2
  publication-title: Nanoelectronics and Information Technology
– start-page: 58
  year: 2018
  ident: 137
  publication-title: Towards Automotive Grade Embedded RRAM European Solid-State Device Research Conference: ESSDERC
– ident: 315
  doi: 10.23919/VLSIT.2017.7998186
– ident: 181
  doi: 10.1002/adma.201501167
– ident: 241
  doi: 10.4028/www.scientific.net/ast.95.136
– start-page: 414
  year: 2014
  ident: 18
  publication-title: IEEE 11th Int. Bhurban Conf. on Applied Sciences and Technology (IBCAST), 2014
  doi: 10.1109/IBCAST.2014.6778179
– ident: 105
  doi: 10.1016/j.progsolidstchem.2011.02.001
– ident: 177
  doi: 10.1109/IEDM.2008.4796676
– year: 2016
  ident: 100
– year: 2015
  ident: 126
– ident: 239
  doi: 10.1016/j.mee.2005.04.084
– ident: 242
  doi: 10.1007/978-94-024-0841-6_1
– ident: 160
  doi: 10.1063/1.126902
– ident: 276
  doi: 10.1109/IEDM19573.2019.8993504
– ident: 325
  doi: 10.1109/tvlsi.2017.2776954
– ident: 30
  doi: 10.1063/1.3319591
– ident: 134
  doi: 10.1109/IEDM.2018.8614635
– ident: 328
  doi: 10.1039/c8nr07135g
– start-page: 1
  year: 2017
  ident: 31
  publication-title: IEEE Int. Memory Workshop (IMW)
– year: 2001
  ident: 119
  publication-title: Essential Guide to Computer Data Storage: From Floppy to DVD
– ident: 316
  doi: 10.1109/IMW.2017.7939066
– ident: 51
  doi: 10.1109/jssc.2015.2498302
– ident: 144
  doi: 10.1016/j.mser.2014.06.002
– volume: 33
  start-page: 1129
  issn: 0034-4885
  year: 1970
  ident: 147
  publication-title: Rep. Prog. Phys.
  doi: 10.1088/0034-4885/33/3/306
– ident: 209
  doi: 10.1109/IEDM.2001.979636
– ident: 128
  doi: 10.1557/mrs.2018.95
– volume: 75
  issn: 0034-4885
  year: 2012
  ident: 159
  publication-title: Rep. Prog. Phys.
  doi: 10.1088/0034-4885/75/7/076502
– ident: 151
  doi: 10.1109/t-ed.1964.15319
– start-page: 1
  year: 2017
  ident: 11
  publication-title: IEEE Int. Memory Workshop (IMW)
– ident: 23
  doi: 10.1145/2695533.2695554
– volume: 4
  start-page: N30
  issn: 2162-8777
  year: 2015
  ident: 270
  publication-title: ECS J. Solid State Sci. Technol.
  doi: 10.1149/2.0081505jss
– ident: 217
  doi: 10.1109/jproc.2016.2590142
– year: 2017
  ident: 127
– year: 2017
  ident: 290
  publication-title: APS March Meeting
– volume: 31
  issn: 0268-1242
  year: 2016
  ident: 219
  publication-title: Semicond. Sci. Technol.
  doi: 10.1088/0268-1242/31/11/113006
– ident: 44
  doi: 10.1063/1.3041628
– ident: 3
  doi: 10.1002/aelm.201400056
– start-page: 621
  year: 2012
  ident: 29
  publication-title: Nanoelectronics and Information Technology
– ident: 312
  doi: 10.1109/mspec.2007.4337663
– ident: 40
  doi: 10.1109/tc.2015.2417540
– ident: 286
  doi: 10.1134/s0021364015200047
– ident: 326
  doi: 10.1109/IEDM.2017.8268471
– ident: 91
  doi: 10.1109/IEDM.2018.8614694
– ident: 282
  doi: 10.1038/ncomms5289
– ident: 224
  doi: 10.1063/1.369931
– ident: 164
  doi: 10.1557/mrs.2011.356
– ident: 305
  doi: 10.1002/adfm.201603182
– ident: 211
  doi: 10.1109/IEDM.2003.1269376
– ident: 281
  doi: 10.1103/physrevb.72.125341
– year: 2017
  ident: 112
– start-page: 327
  year: 2005
  ident: 88
  publication-title: IEEE Int. Electron Devices Meeting, Technical Digest
– ident: 308
  doi: 10.1109/led.2013.2290117
– ident: 235
  doi: 10.1038/nnano.2015.41
– ident: 175
  doi: 10.1063/1.4864653
– ident: 298
  doi: 10.1063/1.2976780
– year: 2003
  ident: 225
  publication-title: U.S. Patent
– year: 2010
  ident: 35
  publication-title: Assessment of the Potential & Maturity of Selected Emerging Research Memory Technologies Workshop & ERD/ERM Working Group Meeting
– ident: 271
  doi: 10.1109/IEDM.2011.6131606
– year: 2007
  ident: 313
  publication-title: IEEE Int. Electron Devices Meeting
– ident: 62
  doi: 10.1109/5.622505
– start-page: 2.1.1–4
  year: 2012
  ident: 83
  publication-title: IEEE Int. Electron Devices Meeting (IEDM)
– volume: 37
  start-page: 2079
  issn: 0021-4922
  year: 1998
  ident: 120
  publication-title: Japan. J. Appl. Phys.
  doi: 10.1143/JJAP.37.2079
– ident: 303
  doi: 10.1021/acsami.7b15110
– ident: 269
  doi: 10.1109/led.2002.1015207
– year: 2018
  ident: 317
  publication-title: IEEE Int. Electron Devices Meeting (IEDM)
– ident: 42
  doi: 10.1002/adfm.201000599
– ident: 92
  doi: 10.1109/ISSCC.2018.8310321
– ident: 233
  doi: 10.1063/1.4863407
– ident: 329
  doi: 10.23919/VLSIT.2017.7998165
– ident: 291
  doi: 10.1002/pssb.200404935
– start-page: 1
  year: 2016
  ident: 10
  publication-title: IEEE 8th Int. Memory Workshop (IMW)
– start-page: 135
  year: 2019
  ident: 215
  publication-title: IEEE (ESSCIRC)
– year: 2003
  ident: 279
– year: 2018
  ident: 56
  publication-title: IEEE Symp. on VLSI Technology
– start-page: 782
  year: 2017
  ident: 188
  publication-title: Asia and South Pacific Design Automation Conference (ASP-DAC)
– ident: 231
  doi: 10.23919/VLSIT.2017.7998174
– start-page: 433
  year: 2016
  ident: 52
  publication-title: 42nd IEEE European Solid-State Circuits Conference (ESSCIRC)
– start-page: 1
  year: 2014
  ident: 273
  publication-title: IEEE Int. Memory Workshop (IMW)
– ident: 310
  doi: 10.1021/acsami.6b13866
– ident: 46
  doi: 10.1109/IEDM.2016.7838026
– ident: 149
  doi: 10.1049/el:19660238
– ident: 152
  doi: 10.1049/ree.1967.0069
– start-page: 657
  year: 2012
  ident: 221
  publication-title: Nanoelectronics and Information Technology
– year: 2007
  ident: 213
  publication-title: IEEE Int. Solid-State Circuits Conference (ISSCC)
– year: 2010
  ident: 292
– volume: 22
  issn: 0957-4484
  year: 2011
  ident: 195
  publication-title: Nanotechnology
– ident: 196
  doi: 10.1109/jproc.2010.2070050
– ident: 155
  doi: 10.1063/1.1713870
– ident: 306
  doi: 10.1109/IEDM.2016.7838398
– ident: 258
  doi: 10.1007/978-3-540-34591-6_5
– ident: 27
  doi: 10.1038/nmat1359
– ident: 145
  doi: 10.1109/jproc.2015.2433311
– ident: 240
  doi: 10.1109/NVMTS.2011.6137107
– ident: 108
  doi: 10.1103/physrevlett.64.2304
– ident: 90
  doi: 10.1109/led.2002.807694
– volume: 37
  issn: 1674-4926
  year: 2016
  ident: 171
  publication-title: J. Semicond.
– ident: 139
  doi: 10.1109/IEDM.2013.6724605
– ident: 101
  doi: 10.1557/mrs.2018.3
– ident: 79
  doi: 10.1145/1555815.1555790
– ident: 107
  doi: 10.1109/jproc.2003.811807
– ident: 32
  doi: 10.1109/40.285230
– ident: 64
  doi: 10.1002/0470068329
– year: 2015
  ident: 55
– ident: 216
  doi: 10.1007/978-3-319-15180-9
– start-page: 160
  year: 2017
  ident: 307
  publication-title: IEEE European Solid-State Device Research Conference (ESSDERC)
– ident: 78
  doi: 10.3390/computers6040028
– ident: 58
  doi: 10.1109/EDCT.2018.8405079
– ident: 288
  doi: 10.1021/acsami.5b11653
– ident: 87
  doi: 10.1063/1.1343892
– ident: 77
  doi: 10.1109/ISSCC.2014.6757458
– start-page: 547
  year: 2005
  ident: 89
  publication-title: IEEE Int. Electron Devices Meeting (IEDM), Technical Digest
– ident: 176
  doi: 10.1038/nmat3070
– ident: 98
  doi: 10.1109/lmag.2018.2789888
– year: 2017
  ident: 168
  publication-title: IEEE Int. Electron Devices Meeting (IEDM)
– ident: 255
  doi: 10.1016/j.jeurceramsoc.2019.05.065
– ident: 26
  doi: 10.1126/science.1110549
– ident: 285
  doi: 10.1063/1.3587452
– ident: 223
  doi: 10.1063/1.365499
– start-page: 5
  year: 2013
  ident: 82
  publication-title: IEEE Int. Memory Workshop (IMW)
– ident: 123
  doi: 10.3139/146.110261
– ident: 249
  doi: 10.1109/IEDM.2016.7838397
– ident: 206
  doi: 10.1109/ted.2004.825805
– volume: 29
  issn: 0957-4484
  year: 2018
  ident: 319
  publication-title: Nanotechnology
  doi: 10.1088/1361-6528/aaaacb
– ident: 109
  doi: 10.1103/physrevlett.67.3598
– ident: 80
  doi: 10.1109/.2006.1629477
– start-page: 17-1–6
  year: 2003
  ident: 189
  publication-title: Proc. Non-Volatile Memory Technology Symp.
– ident: 116
  doi: 10.1080/00076791.2013.771332
– start-page: 162
  year: 2004
  ident: 324
  publication-title: Conf. Computing Frontiers
  doi: 10.1145/977091.977115
– ident: 266
  doi: 10.1063/1.360122
– year: 2019
  ident: 277
  publication-title: IEEE Int. Electron Devices Meeting (IEDM)
– ident: 158
  doi: 10.1109/tct.1971.1083337
– year: 2016
  ident: 289
– ident: 148
  doi: 10.1063/1.4929512
– year: 2006
  ident: 226
– volume: 3
  start-page: 195
  year: 2013
  ident: 60
  publication-title: Int. J. Inf. Comput. Technol.
– year: 2013
  ident: 49
  publication-title: IEEE Int. Electron Devices Meeting (IEDM)
– year: 2020
  ident: 115
– ident: 318
  doi: 10.1126/science.289.5476.94
– ident: 33
  doi: 10.1016/j.sysarc.2010.12.003
– ident: 86
  doi: 10.1109/ISSCC.2016.7417947
– year: 2019
  ident: 133
– year: 2018
  ident: 294
  publication-title: IEEE European Solid-State Device Research Conference (ESSDERC)
– year: 2016
  ident: 287
  publication-title: IEEE Int. Reliability Physics Symposium (IRPS)
– ident: 25
  doi: 10.1109/85.238389
– ident: 99
  doi: 10.1201/b20044-3
– ident: 309
  doi: 10.1109/IEDM.2015.7409777
– ident: 118
  doi: 10.1007/978-3-319-69907-3_3
– ident: 94
  doi: 10.1109/ISSCC.2019.8662443
– volume: 39
  start-page: 770
  issn: 0021-4922
  year: 2000
  ident: 204
  publication-title: Japan. J. Appl. Phys.
  doi: 10.1143/JJAP.39.770
– year: 2006
  ident: 248
  publication-title: Gordon Research Conference (Ceramics, Solid State Studies)
– year: 2013
  ident: 43
  publication-title: Atomic Layer Deposition for Semiconductors
– ident: 122
  doi: 10.1109/5.883319
– ident: 245
  doi: 10.1109/VLSIT.2007.4339704
– ident: 140
  doi: 10.1109/mssc.2016.2546199
– volume: 5
  start-page: 349
  issn: 0021-4922
  year: 1966
  ident: 150
  publication-title: Japan. J. Appl. Phys.
  doi: 10.1143/JJAP.5.349
– ident: 135
  doi: 10.1109/IEDM.2018.8614620
– ident: 257
– ident: 138
  doi: 10.1109/VLSI-TSA.2018.8403848
– volume: 30
  issn: 0268-1242
  year: 2015
  ident: 167
  publication-title: Semicond. Sci. Technol.
  doi: 10.1088/0268-1242/30/11/115014
– year: 2006
  ident: 1
  publication-title: Materials for Information Technology: Devices, Interconnects and Packaging
– ident: 154
  doi: 10.1016/0038-1101(64)90131-5
– year: 2016
  ident: 260
– year: 2018
  ident: 129
  publication-title: IEEE Int. Electron Devices Meeting (IEDM)
– ident: 198
  doi: 10.1557/mrs.2014.139
– ident: 203
  doi: 10.7567/jjaps.26s4.61
– ident: 20
  doi: 10.1109/jproc.1998.658762
– volume: 86
  start-page: 35
  issn: 1938-5862
  year: 2018
  ident: 182
  publication-title: ECS Trans.
  doi: 10.1149/08603.0035ecst
– volume: 99
  start-page: 1
  issn: 0018-9219
  year: 2017
  ident: 72
  publication-title: Proc. IEEE
– year: 2008
  ident: 76
  publication-title: Error Correction Codes for Non-Volatile Memories
– ident: 172
  doi: 10.1109/ted.2012.2218607
– ident: 295
  doi: 10.1109/IMW.2019.8739765
– ident: 327
  doi: 10.1063/1.5042413
– ident: 232
  doi: 10.1038/nnano.2014.8
– ident: 22
  doi: 10.1080/01457632.2014.939032
– ident: 314
  doi: 10.1109/ESSDERC.2011.6044239
– ident: 180
  doi: 10.1109/tns.2012.2224377
– start-page: 25
  year: 2012
  ident: 274
  publication-title: IEEE Symp. on VLSI Technology (VLSIT)
– year: 2006
  ident: 12
– ident: 45
  doi: 10.1016/j.sse.2015.08.012
– year: 2016
  ident: 293
  publication-title: IEEE Symp. on VLSI Technology
– ident: 117
  doi: 10.1007/3-540-45852-2_1
– ident: 47
  doi: 10.1109/jssc.1974.1050511
– ident: 302
  doi: 10.1103/physrevapplied.12.031001
– ident: 75
  doi: 10.1109/ICCD.2012.6378623
– ident: 208
  doi: 10.1109/IRPS.2016.7574617
– ident: 311
  doi: 10.1021/acsami.8b08967
– ident: 15
  doi: 10.1147/rd.524.0439
– ident: 104
  doi: 10.1103/physrevb.39.4828
– year: 2014
  ident: 323
  publication-title: IEEE Design, Automation & Test in Europe Conf. & Exhibition (DATE)
– ident: 267
  doi: 10.1166/jnn.2012.6651
– ident: 121
  doi: 10.1515/rest.2011.004
– ident: 136
  doi: 10.1109/ISSCC.2019.8662393
– ident: 186
  doi: 10.1039/c8fd00127h
– start-page: 3.7.1–3
  year: 2014
  ident: 54
  publication-title: IEEE Int. Electron Devices Meeting (IEDM)
– year: 2015
  ident: 24
– ident: 169
  doi: 10.1038/nmat2748
– ident: 220
  doi: 10.1557/mrs.2018.93
– start-page: 637
  year: 2012
  ident: 38
  publication-title: Nanoelectronics and Information Technology
– ident: 85
  doi: 10.1109/IEDM.2015.7409618
– ident: 67
  doi: 10.1109/IEDM.2015.7409666
– ident: 299
  doi: 10.1063/1.4972786
– start-page: 601
  year: 2012
  ident: 36
  publication-title: Nanoelectronics and Information Technology
– ident: 66
  doi: 10.1051/epjap:2004206
– year: 2019
  ident: 227
– year: 2009
  ident: 214
  publication-title: IEEE Int. Electron Devices Meeting (IEDM)
– year: 1952
  ident: 259
– ident: 261
  doi: 10.1016/B978-0-08-102430-0.00019-X
– ident: 205
  doi: 10.1038/nmat2330
– ident: 161
  doi: 10.1063/1.126464
– ident: 202
  doi: 10.1063/1.97617
– start-page: 175
  year: 2012
  ident: 37
  publication-title: Nanoelectronics and Information Technology
– ident: 264
  doi: 10.1063/1.2337361
– year: 2009
  ident: 74
  publication-title: IEEE Int. Memory Workshop (IMW)
– ident: 111
  doi: 10.1557/mrs.2015.195
– ident: 185
  doi: 10.1002/adfm.201303365
– ident: 304
  doi: 10.1557/mrc.2018.175
– year: 2019
  ident: 194
– ident: 210
  doi: 10.1109/IEDM.2003.1269271
– ident: 253
  doi: 10.1109/ESSDERC.2018.8486916
– volume: 31
  issn: 0268-1242
  year: 2016
  ident: 191
  publication-title: Semicond. Sci. Technol.
  doi: 10.1088/0268-1242/31/11/113001
– ident: 13
  doi: 10.1109/ms.2014.39
– ident: 73
  doi: 10.1109/ISSCC.1995.535462
– year: 2017
  ident: 275
  publication-title: IEEE Int. Electron Devices Meeting (IEDM)
– ident: 50
  doi: 10.1109/VLSI-TSA.2014.6839696
– ident: 5
– start-page: 4
  year: 2002
  ident: 321
  publication-title: Non-Volatile Memory Technology Symposium
– year: 2003
  ident: 247
– ident: 284
  doi: 10.1002/adma.201904123
– ident: 124
  doi: 10.2307/j.ctt2005wh5.27
– ident: 238
  doi: 10.1007/978-3-662-04307-3
– year: 2005
  ident: 263
  publication-title: IEEE Int. Electron Devices Meeting (IEDM)
– start-page: 174
  year: 2013
  ident: 174
  publication-title: IEEE Int. Memory Workshop
– year: 2011
  ident: 173
  publication-title: IEEE Int. Electron Devices Meeting (IEDM)
– ident: 300
  doi: 10.1002/adfm.201000265
– ident: 190
  doi: 10.1109/IEDM.2005.1609463
– ident: 301
  doi: 10.1038/nmat1860
– ident: 218
  doi: 10.1016/j.mattod.2017.07.007
– ident: 103
  doi: 10.1103/physrevlett.61.2472
– ident: 278
  doi: 10.1557/proc-688-c6.5.1
– volume: 31
  issn: 0268-1242
  year: 2016
  ident: 165
  publication-title: Semicond. Sci. Technol.
  doi: 10.1088/0268-1242/31/6/063002
– ident: 256
  doi: 10.1021/acsami.8b11681
– ident: 102
  doi: 10.3390/s16060904
– year: 2002
  ident: 212
  publication-title: IEEE Int. Solid-State Circuits Conference (ISSCC) Cat. No.02CH37315
– year: 2020
  ident: 114
– ident: 153
  doi: 10.1080/14786436708229693
– ident: 179
  doi: 10.1063/1.3543837
– ident: 201
  doi: 10.1103/physrevlett.21.1450
– ident: 110
  doi: 10.1103/physrevb.44.7131
– ident: 297
  doi: 10.1038/s41467-020-15159-2
– ident: 6
  doi: 10.1016/j.sse.2016.07.006
– ident: 320
  doi: 10.1109/mm.2019.2897560
– ident: 97
  doi: 10.1080/09506608.2016.1204097
– ident: 141
  doi: 10.1016/s1369-7021(08)70119-6
– ident: 16
  doi: 10.1016/j.future.2013.01.010
– ident: 19
  doi: 10.1109/mc.2015.12
– year: 2001
  ident: 322
– year: 2010
  ident: 7
  publication-title: IEEE Int. Interconnect Technology Conf.
– ident: 162
  doi: 10.1109/IEDM.2002.1175811
– ident: 96
  doi: 10.1557/mrs.2018.96
– ident: 21
  doi: 10.1126/science.1182769
– ident: 236
  doi: 10.1038/nnano.2014.324
– ident: 183
  doi: 10.1109/IMW.2015.7150303
– ident: 265
  doi: 10.1038/nature05148
– start-page: 289
  year: 2008
  ident: 142
  publication-title: IEEE Int. Electron Devices Meeting (IEDM)
– ident: 70
  doi: 10.1109/jproc.2003.818323
– year: 2018
  ident: 113
– ident: 207
  doi: 10.1109/jssc.2016.2597822
– ident: 251
  doi: 10.1063/1.5060676
– ident: 4
  doi: 10.1016/j.sse.2014.06.009
– year: 2009
  ident: 237
  publication-title: IEEE Symp. on VLSI Technology
– volume: 6
  start-page: 353
  year: 2017
  ident: 59
  publication-title: Int. J. Eng. Sci. Res. Technol.
– ident: 197
  doi: 10.1080/02670836.2017.1341723
– ident: 192
  doi: 10.1186/s11671-015-0880-9
– year: 2010
  ident: 84
  publication-title: IEEE Int. Electron Devices Meeting (IEDM)
– ident: 178
  doi: 10.1021/am5021149
– ident: 143
  doi: 10.1002/adem.200800294
– ident: 262
– ident: 48
  doi: 10.1109/5.915374
– ident: 330
  doi: 10.1109/IMFEDK.2018.8581955
– ident: 9
  doi: 10.1147/rd.524.0449
– ident: 250
  doi: 10.1109/IMW.2018.8388832
– ident: 65
  doi: 10.1063/1.1361065
– ident: 132
  doi: 10.1109/IEDM.2018.8614566
– ident: 34
  doi: 10.1109/ICICDT.2018.8399771
– start-page: 464
  year: 1984
  ident: 63
  publication-title: Int. Electron Devices Meeting (IEDM)
– ident: 106
  doi: 10.1016/0375-9601(75)90174-7
– ident: 230
  doi: 10.1002/pssr.201105420
– volume: 4
  start-page: 30
  year: 2014
  ident: 125
  publication-title: Int. J. E-Bus. Dev.
– year: 2009
  ident: 246
– ident: 157
  doi: 10.1016/0038-1101(68)90092-0
SSID ssj0011829
Score 2.5794175
SecondaryResourceType review_article
Snippet From our own experience, we know that there is a gap to bridge between the scientists focused on basic material research and their counterparts in a...
From our own experience in the group, we know that there is quite a gap to bridge between scientists focused on basic material research and their counterparts...
SourceID proquest
pubmed
crossref
iop
SourceType Aggregation Database
Index Database
Enrichment Source
Publisher
StartPage 86501
SubjectTerms emerging memory
hard-disk drive
market trends
non-volatile memory
random-access memory
review
storage class memory
Title Memory technology-a primer for material scientists
URI https://iopscience.iop.org/article/10.1088/1361-6633/ab8f86
https://www.ncbi.nlm.nih.gov/pubmed/32357345
https://www.proquest.com/docview/2397668364
Volume 83
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnZ1Lb9QwEIBHfQiJS0t5dSmgIMGBg3edjOM44oQQVVupwIFKPSBZfl6Kdle72QP8esZxNlIRVIhbIk0SZzKOP3vGMwCvlQweK8MZx9AyYZuaKe8dqwjmlXXS-95jevlJnl2Ji-v6egfejXthFsvh1z-lw5woOKtwCIhTsxJlyWigxJmxKiq5C_uopEzlC84_fxldCATOmX1RMLLSevBR_ukOt8akXXru33GzH3ZOD-HbtsE52uRmuuns1P38LZfjf77RAzgYcLR4n0WPYCfMH8K9PizUrR9BdZkCcX8U3bgAz0yxTBUBVgXRbkG421twkfdVksmsH8PV6cevH87YUGWBOYKxjpWy4b61lURbYSgdt5GLxtnGRcUDzQ4NCtUGKSOXxpg2RkOQ1HpCxdYSvuAT2Jsv5uEYCsQQPXfeV8oLg86gahpuyzIKX5taTmC21bN2QwryVAnju-5d4UrppAmdNKGzJibwdrximdNv3CH7hhSshz64vkOuuCW3ohOFWmma3dW81EsfJ_Bq-_01dbfkQzHzsNisdZX4TSqUYgJPs2GMDcOUOghF_ewfG3IC96s0e-_DCZ_DXrfahBeEOJ192ZvyLywR8Pg
linkProvider IOP Publishing
linkToPdf http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpZ1Lb9QwEIBHtAjEhXdheQYJDhy862QcxzlWhVULtPRApd6Mn5dWu6vd7AF-PeM4u1IRVEjcEmmSOJNx_NkzngF4q2TwWBnOOIaWCdvUTHnvWEUwr6yT3vce0-MTeXgmPp3X50Od034vzHwx_PrHdJgTBWcVDgFxalKiLBkNlDgxVkUlJwsfd-BmjRJT8vyjr6dbNwLBc-ZfFIwstR78lH-6y5VxaYee_Xfk7Iee6T34vml0jji5GK87O3Y_f8vn-B9vdR_uDlha7GfxB3AjzB7CrT481K0eQXWcAnJ_FN12IZ6ZYpEqAywLot6CsLe35CLvryTTWT2Gs-nHbweHbKi2wBxBWcdK2XDf2kqirTCUjtvIReNs46LigWaJBoVqg5SRS2NMG6MhWGo9IWNrCWNwD3Zn81l4CgViiJ477yvlhUFnUDUNt2UZha9NLUcw2ehauyEVeaqIcal7l7hSOmlDJ23orI0RvN9eschpOK6RfUdK1kNfXF0jV1yRW9KJQq00zfJqXmr6ACN4s7EBTd0u-VLMLMzXK10ljpMKpRjBk2wc24ZhSiGEon72jw15DbdPP0z1l6OTz8_hTpUm9H2E4QvY7Zbr8JKop7Ovesv-BYrw9lw
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Memory+Technology+-+A+Primer+for+Material+Scientists&rft.jtitle=Reports+on+progress+in+physics&rft.au=Schenk%2C+Tony&rft.au=Pesic%2C+Milan&rft.au=Slesazeck%2C+Stefan&rft.au=Schroeder%2C+Uwe&rft.date=2020-08-01&rft.eissn=1361-6633&rft_id=info:doi/10.1088%2F1361-6633%2Fab8f86&rft_id=info%3Apmid%2F32357345&rft.externalDocID=32357345
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0034-4885&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0034-4885&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0034-4885&client=summon