APA (7th ed.) Citation

Tanner, D. P., Caro, M. A., O'Reilly, E. P., & Schulz, S. (2016). Atomistic analysis of the electronic structure of m-plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations. Physica Status Solidi. B: Basic Solid State Physics, 253(5), 853-860. https://doi.org/10.1002/pssb.201552642

Chicago Style (17th ed.) Citation

Tanner, Daniel P., Miguel A. Caro, Eoin P. O'Reilly, and Stefan Schulz. "Atomistic Analysis of the Electronic Structure of M-plane InGaN/GaN Quantum Wells: Carrier Localization Effects in Ground and Excited States Due to Random Alloy Fluctuations." Physica Status Solidi. B: Basic Solid State Physics 253, no. 5 (2016): 853-860. https://doi.org/10.1002/pssb.201552642.

MLA (9th ed.) Citation

Tanner, Daniel P., et al. "Atomistic Analysis of the Electronic Structure of M-plane InGaN/GaN Quantum Wells: Carrier Localization Effects in Ground and Excited States Due to Random Alloy Fluctuations." Physica Status Solidi. B: Basic Solid State Physics, vol. 253, no. 5, 2016, pp. 853-860, https://doi.org/10.1002/pssb.201552642.