A Highly Linear Broadband CMOS LNA Employing Noise and Distortion Cancellation

• Published in: IEEE journal of solid-state circuits Vol. 43; no. 5; pp. 1164 - 1176
• Main Authors: Wei-Hung Chen, Gang Liu, Zdravko, B., Niknejad, A.M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01.05.2008; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Amplifiers; Applied sciences; Broadband; Broadband amplifiers; Broadband LNA; Cancellation; Circuit properties; Circuits; CMOS; CMOS technology; Design. Technologies. Operation analysis. Testing; Distortion; distortion cancellation; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Gates (circuits); Integrated circuits; Linearity; Low-noise amplifiers; MOSFETs; Narrowband; Noise; Noise cancellation; Noise figure; Noise levels; Semiconductor device noise; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Voltage; volterra series analysis; Wide band noise; Noise figure; Second order; noise cancellation; Noise reduction; Third order; Low noise amplifier; Broadband LNA; Common source configuration; distortion cancellation; Volterra series; Intercept point; Wide band; Complementary MOS technology; volterra series analysis; Gain
• DOI: 10.1109/JSSC.2008.920335
• ISSN: 0018-9200

A broadband inductorless low-noise amplifier (LNA) design that utilizes simultaneous noise and distortion cancellation is presented. Concurrent cancellation of the intrinsic third-order distortion from individual stages is exhibited with the common-gate and common-source cascade. The LNA is then limited by the second-order interaction between the common source and common gate stages, which is common in all cascade amplifiers. Further removal of this third-order distortion is achieved by incorporating a second-order-distortion-free circuit technique in the common gate stage. Implemented in 0.13 m CMOS technology, this LNA achieved 16 dBm in both the 900 MHz and 2 GHz bands. Measurements demonstrate that the LNA has a minimum internal gain of 14.5 dB, noise figure of 2.6 dB from 800 MHz to 2.1GHz while drawing 11.6 mA from 1.5 V supply voltage.