Strain-based room-temperature non-volatile MoTe2 ferroelectric phase change transistor

• Published in: Nature nanotechnology Vol. 14; no. 7; pp. 668 - 673
• Main Authors: Hou, Wenhui, Azizimanesh, Ahmad, Sewaket, Arfan, Peña, Tara, Watson, Carla, Liu, Ming, Askari, Hesam, Wu, Stephen M.
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 01.07.2019; Nature Publishing Group
• Subjects: 140/133; 639/166/987; 639/301/119/996; 639/766/1130; 639/766/119/2795; 639/925/927/1007; Chemistry and Materials Science; Computation; Computer applications; Conductivity; Current leakage; Electric fields; Ferroelectric materials; Ferroelectricity; Field effect transistors; Landscape architecture; Letter; Materials Science; Molybdenum compounds; Nanotechnology; Nanotechnology and Microengineering; Phase transitions; Power consumption; Room temperature; Semiconductor devices; Switching; Tellurides; Thin films; Transistors; Transition metal compounds; Volatility

The primary mechanism of operation of almost all transistors today relies on the electric-field effect in a semiconducting channel to tune its conductivity from the conducting ‘on’ state to a non-conducting ‘off’ state. As transistors continue to scale down to increase computational performance, phy...