Strain-based room-temperature non-volatile MoTe2 ferroelectric phase change transistor - Hou, Wenhui; Azizimanesh, Ahmad; Sewaket, Arfan; Peña, Tara; Watson, Carla; Liu, Ming; Askari, Hesam; Wu, Stephen M. (Nature nanotechnology, 2019)
Keywords: 140/133; 639/166/987; 639/301/119/996; 639/766/1130; 639/766/119/2795; 639/925/927/1007; Chemistry and Materials Science; Computation; Computer applications; Conductivity; Current leakage; Electric fields; Ferroelectric materials; Ferroelectricity; Field effect transistors; Landscape architecture; Letter; Materials Science; Molybdenum compounds; Nanotechnology; Nanotechnology and Microengineering; Phase transitions; Power consumption; Room temperature; Semiconductor devices; Switching; Tellurides; Thin films; Transistors; Transition metal compounds; Volatility