Current mismatch due to local dopant fluctuations in MOSFET channel

• Published in: IEEE transactions on electron devices Vol. 50; no. 11; pp. 2248 - 2254
• Main Authors: Hongning Yang, Macary, V., Huber, J.L., Won-Gi Min, Baird, B., Jiangkai Zuo
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.11.2003; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Channels; Devices; Dopants; Equivalence; Fluctuation; Mathematical analysis; MOSFETs; Semiconductor device modeling; Studies; Voltage

A microscopic multitransistor model is developed to analyze the impact of local dopant fluctuation on the intrinsic mismatch of long-channel MOSFET. A closed analytical formula for current mismatch is derived to show a nonscaled and self-consistent form /spl sim/[4+Log(L/L/sub min/)]/WL. This is in...