Current mismatch due to local dopant fluctuations in MOSFET channel
A microscopic multitransistor model is developed to analyze the impact of local dopant fluctuation on the intrinsic mismatch of long-channel MOSFET. A closed analytical formula for current mismatch is derived to show a nonscaled and self-consistent form /spl sim/[4+Log(L/L/sub min/)]/WL. This is in...
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Published in | IEEE transactions on electron devices Vol. 50; no. 11; pp. 2248 - 2254 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.11.2003
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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