Transferring-free and large-area graphitic carbon film growth by using molecular beam epitaxy at low growth temperature

• Published in: Journal of crystal growth Vol. 425; pp. 177 - 180
• Main Authors: Lin, Meng-Yu, Wang, Cheng-Hung, Pao, Chun-Wei, Lin, Shih-Yen
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.09.2015
• Subjects: A3. Molecular beam epitaxy; B2. Semiconducting materials; Carbon; Copper; Crystal growth; Graphene; Molecular beam epitaxy; Nickel; Silicon dioxide; Silicon substrates; A3. Molecular beam epitaxy; B2. Semiconducting materials

Graphitic carbon films prepared by using molecular beam epitaxy (MBE) on metal templates with different thicknesses deposited on SiO2/Si substrates are investigated in this paper. With thick Cu templates, only graphitic carbon flakes are obtained near the Cu grain boundaries at low growth temperatur...