Transferring-free and large-area graphitic carbon film growth by using molecular beam epitaxy at low growth temperature

• Published in: Journal of crystal growth Vol. 425; pp. 177 - 180
• Main Authors: Lin, Meng-Yu, Wang, Cheng-Hung, Pao, Chun-Wei, Lin, Shih-Yen
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.09.2015
• Subjects: A3. Molecular beam epitaxy; B2. Semiconducting materials; Carbon; Copper; Crystal growth; Graphene; Molecular beam epitaxy; Nickel; Silicon dioxide; Silicon substrates; A3. Molecular beam epitaxy; B2. Semiconducting materials
• DOI: 10.1016/j.jcrysgro.2015.02.039
• ISSN: 0022-0248

Graphitic carbon films prepared by using molecular beam epitaxy (MBE) on metal templates with different thicknesses deposited on SiO2/Si substrates are investigated in this paper. With thick Cu templates, only graphitic carbon flakes are obtained near the Cu grain boundaries at low growth temperatures on metal/SiO2 interfaces. By replacing the Cu templates with thin Ni templates, complete graphitic carbon films with superior crystalline quality is obtained at 600°C on SiO2/Si substrates after removing the Ni templates. The enhanced attachment of the graphitic carbon film to the SiO2/Si substrates with reduced Ni thickness makes the approach a promising approach for transferring-free graphene preparation at low temperature by using MBE. •Graphene growth on thin Ni films is achieved in a MBE system and an in situ thermal coater.•The growth temperature of the graphitic films on thin 10–20 nm Ni films is greatly reduced to 600 oC.•Complete graphitic films are obtained by etching off the thin Ni films on SiO2/Si substrates.