Ge-on-SOI-Detector/Si-CMOS-Amplifier Receivers for High-Performance Optical-Communication Applications
In this paper, an overview and assessment of high-performance receivers based upon Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and Si CMOS amplifier ICs is provided. Receivers utilizing Ge-on-SOI lateral p-i-n photodiodes paired with high-gain CMOS amplifiers are shown to operate at 15 Gb/s w...
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| Published in | Journal of lightwave technology Vol. 25; no. 1; pp. 46 - 57 |
|---|---|
| Main Authors | , , , , , , |
| Format | Journal Article Conference Proceeding |
| Language | English |
| Published |
New York, NY
IEEE
01.01.2007
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subjects | |
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| Abstract | In this paper, an overview and assessment of high-performance receivers based upon Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and Si CMOS amplifier ICs is provided. Receivers utilizing Ge-on-SOI lateral p-i-n photodiodes paired with high-gain CMOS amplifiers are shown to operate at 15 Gb/s with a sensitivity of -7.4 dBm (BER=10 -12 ) while utilizing a single supply voltage of only 2.4 V. The 5-Gb/s sensitivity of similar receivers is constant up to 93 degC, and 10-Gb/s operation is demonstrated at 85 degC. Error-free (BER<10 -12 ) operation of receivers combining a Ge-on-SOI photodiode with a single-ended high-speed receiver front end is demonstrated at 19 Gb/s, using a supply voltage of 1.8 V. In addition, receivers utilizing Ge-on-SOI photodiodes integrated with a low-power CMOS IC are shown to operate at 10 Gb/s using a single 1.1-V supply while consuming only 11 mW of power. A perspective on the future technological capabilities and applications of Ge-detector/Si-CMOS receivers is also provided |
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| AbstractList | Error-free (BER<10-12) operation of receivers combining a Ge-on-SOI photodiode with a single-ended high-speed receiver front end is demonstrated at 19 Gb/s, using a supply voltage of 1.8 V. In addition, receivers utilizing Ge-on-SOI photodiodes integrated with a low-power CMOS IC are shown to operate at 10 Gb/s using a single 1.1-V supply while consuming only 11 mW of power. In this paper, an overview and assessment of high-performance receivers based upon Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and Si CMOS amplifier ICs is provided. Receivers utilizing Ge-on-SOI lateral p-i-n photodiodes paired with high-gain CMOS amplifiers are shown to operate at 15 Gb/s with a sensitivity of -7.4 dBm (BER=10 super(-12)) while utilizing a single supply voltage of only 2.4 V. The 5-Gb/s sensitivity of similar receivers is constant up to 93 degC, and 10-Gb/s operation is demonstrated at 85 degC. Error-free (BER<10 super(-12)) operation of receivers combining a Ge-on-SOI photodiode with a single-ended high-speed receiver front end is demonstrated at 19 Gb/s, using a supply voltage of 1.8 V. In addition, receivers utilizing Ge-on-SOI photodiodes integrated with a low-power CMOS IC are shown to operate at 10 Gb/s using a single 1.1-V supply while consuming only 11 mW of power. A perspective on the future technological capabilities and applications of Ge-detector/Si-CMOS receivers is also provided In this paper, an overview and assessment of high-performance receivers based upon Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and Si CMOS amplifier ICs is provided. Receivers utilizing Ge-on-SOI lateral p-i-n photodiodes paired with [abstract truncated by publisher]. In this paper, an overview and assessment of high-performance receivers based upon Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and Si CMOS amplifier ICs is provided. Receivers utilizing Ge-on-SOI lateral p-i-n photodiodes paired with high-gain CMOS amplifiers are shown to operate at 15 Gb/s with a sensitivity of -7.4 dBm (BER=10 -12 ) while utilizing a single supply voltage of only 2.4 V. The 5-Gb/s sensitivity of similar receivers is constant up to 93 degC, and 10-Gb/s operation is demonstrated at 85 degC. Error-free (BER<10 -12 ) operation of receivers combining a Ge-on-SOI photodiode with a single-ended high-speed receiver front end is demonstrated at 19 Gb/s, using a supply voltage of 1.8 V. In addition, receivers utilizing Ge-on-SOI photodiodes integrated with a low-power CMOS IC are shown to operate at 10 Gb/s using a single 1.1-V supply while consuming only 11 mW of power. A perspective on the future technological capabilities and applications of Ge-detector/Si-CMOS receivers is also provided |
| Author | Dehlinger, G. John, R.A. Doany, F.E. Schow, C.L. Schares, L. Schaub, J.D. Koester, S.J. |
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| Keywords | Performance evaluation High performance Addition Bit error rate Optical telecommunication Measurement sensor Power supply Review germanium Amplifier Photodetector optical receivers Silicon on insulator technology CMOS photodetectors p i n photodiodes Complementary MOS technology Optoelectronic device Optical receiver CMOS integrated circuits Low-power electronics Power integrated circuits Gain High rate transmission |
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| SubjectTerms | Amplifiers Applied sciences Assessments Circuit properties CMOS CMOS integrated circuits Electric potential Electric, optical and optoelectronic circuits Electronics Exact sciences and technology germanium High speed High speed integrated circuits High speed optical techniques Integrated optics. Optical fibers and wave guides Operational amplifiers Optical amplifiers Optical and optoelectronic circuits Optical receivers Optical sensors Optical telecommunications Optoelectronic devices p hotodetectors Photodiodes PIN photodiodes Receivers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stimulated emission Systems, networks and services of telecommunications Telecommunications Telecommunications and information theory Transmission and modulation (techniques and equipments) Voltage |
| Title | Ge-on-SOI-Detector/Si-CMOS-Amplifier Receivers for High-Performance Optical-Communication Applications |
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