Ge-on-SOI-Detector/Si-CMOS-Amplifier Receivers for High-Performance Optical-Communication Applications

• Published in: Journal of lightwave technology Vol. 25; no. 1; pp. 46 - 57
• Main Authors: Koester, S.J., Schow, C.L., Schares, L., Dehlinger, G., Schaub, J.D., Doany, F.E., John, R.A.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01.01.2007; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Amplifiers; Applied sciences; Assessments; Circuit properties; CMOS; CMOS integrated circuits; Electric potential; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; germanium; High speed; High speed integrated circuits; High speed optical techniques; Integrated optics. Optical fibers and wave guides; Operational amplifiers; Optical amplifiers; Optical and optoelectronic circuits; Optical receivers; Optical sensors; Optical telecommunications; Optoelectronic devices; p hotodetectors; Photodiodes; PIN photodiodes; Receivers; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Stimulated emission; Systems, networks and services of telecommunications; Telecommunications; Telecommunications and information theory; Transmission and modulation (techniques and equipments); Voltage; Performance evaluation; High performance; Addition; Bit error rate; Optical telecommunication; Measurement sensor; Power supply; Review; germanium; Amplifier; Photodetector; optical receivers; Silicon on insulator technology; CMOS; photodetectors; p i n photodiodes; Complementary MOS technology; Optoelectronic device; Optical receiver; CMOS integrated circuits; Low-power electronics; Power integrated circuits; Gain; High rate transmission
• ISSN: 0733-8724; 1558-2213
• DOI: 10.1109/JLT.2006.888923

In this paper, an overview and assessment of high-performance receivers based upon Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and Si CMOS amplifier ICs is provided. Receivers utilizing Ge-on-SOI lateral p-i-n photodiodes paired with high-gain CMOS amplifiers are shown to operate at 15 Gb/s with a sensitivity of -7.4 dBm (BER=10 -12 ) while utilizing a single supply voltage of only 2.4 V. The 5-Gb/s sensitivity of similar receivers is constant up to 93 degC, and 10-Gb/s operation is demonstrated at 85 degC. Error-free (BER<10 -12 ) operation of receivers combining a Ge-on-SOI photodiode with a single-ended high-speed receiver front end is demonstrated at 19 Gb/s, using a supply voltage of 1.8 V. In addition, receivers utilizing Ge-on-SOI photodiodes integrated with a low-power CMOS IC are shown to operate at 10 Gb/s using a single 1.1-V supply while consuming only 11 mW of power. A perspective on the future technological capabilities and applications of Ge-detector/Si-CMOS receivers is also provided