Constructing a supercapacitor-memristor through non-linear ion transport in MOF nanochannels

The coexistence and coupling of capacitive and memristive effects have been an important subject of scientific interest. While the capacitive effect in memristors has been extensively studied, the reciprocal scenario of the memristive effect in capacitors remains unexplored. In this study, we introd...

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Published inNational science review Vol. 11; no. 10; p. nwae322
Main Authors Tang, Pei, Jing, Pengwei, Luo, Zhiyuan, Liu, Kekang, Zhao, Xiaoxi, Lao, Yining, Yao, Qianqian, Zhong, Chuyi, Fu, Qingfeng, Zhu, Jian, Liu, Yanghui, Dou, Qingyun, Yan, Xingbin
Format Journal Article
LanguageEnglish
Published China Oxford University Press 01.10.2024
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Summary:The coexistence and coupling of capacitive and memristive effects have been an important subject of scientific interest. While the capacitive effect in memristors has been extensively studied, the reciprocal scenario of the memristive effect in capacitors remains unexplored. In this study, we introduce a supercapacitor-memristor (CAPistor) concept, which is constructed by leveraging non-linear ion transport within the pores of a metal-organic framework zeolitic-imidazolate framework (ZIF-7). Within the nanochannels of the ZIF-7 electrode in an aqueous pseudocapacitor, the anionic species (OH−) of the electrolyte can be enriched and dissipated in different voltage regimes. This difference leads to a hysteresis effect in ion conductivity, constituting a memristive behavior in the pseudocapacitor. Thus, the pseudocapacitor-converted CAPistor seamlessly integrates the programmable resistance and memory functions of an ionic memristor into a supercapacitor, demonstrating enormous potential to extend the traditional energy storage applications of supercapacitors into emerging fields, including biomimetic nanofluidic ionics and neuromorphic computing. This work introduces a supercapacitor-memristor concept that leverages non-linear ion transport within ZIF-7 frameworks, enabling rapid ion storage and memory functions, and opening new avenues in the field of iontronics.
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ISSN:2095-5138
2053-714X
2053-714X
DOI:10.1093/nsr/nwae322