Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model

• Published in: IEEE transactions on electron devices Vol. 50; no. 2; pp. 315 - 323
• Main Authors: Tsung-Hsing Yu, Brennan, K.F.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.02.2003; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Alloys; Aluminum compounds; Charge carrier density; Electron mobility; Gallium compounds; High electron mobility transistors; Mathematical analysis; Mathematical models; MODFETs; Nonlinearity; Polarization; Semiconductor device modeling; Semiconductor devices

We present a theoretical model of an AlGaN-GaN high electron mobility field effect transistor (HEMT) that includes a nonlinear model of the strain polarization fields produced at the heterointerface. Recent experimental work has indicated that the macroscopic polarization in III-nitride alloys is a...