Graphene FETs with high and low mobilities have universal temperature-dependent properties

• Published in: Nanotechnology Vol. 34; no. 12; pp. 125702 - 125711
• Main Authors: Gosling, Jonathan H, Morozov, Sergey V, Vdovin, Evgenii E, Greenaway, Mark T, Khanin, Yurii N, Kudrynskyi, Zakhar, Patanè, Amalia, Eaves, Laurence, Turyanska, Lyudmila, Fromhold, T Mark, Makarovsky, Oleg
• Format: Journal Article
• Language: English
• Published: England IOP Publishing 19.03.2023
• Subjects: charged impurities; convolution model; electrical properties; graphene; convolution model; electrical properties; charged impurities; graphene

We use phenomenological modelling and detailed experimental studies of charge carrier transport to investigate the dependence of the electrical resistivity, , on gate voltage, , for a series of monolayer graphene field effect transistors with mobilities, , ranging between 5000 and 250 000 cm V s at...