Polycrystalline BiCuSeO oxide as a potential thermoelectric material
This work revealed that BiCuSeO oxyselenide is a potential oxide-based thermoelectric material, whose dimensionless figure of merit ( ZT ) reaches ∼0.70 at 773 K. High phase-purity BiCuSeO polycrystalline materials with fine grains were synthesized by a facile method combining a solid-state reaction...
Saved in:
Published in | Energy & environmental science Vol. 5; no. 5; pp. 7188 - 7195 |
---|---|
Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.05.2012
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | This work revealed that BiCuSeO oxyselenide is a potential oxide-based thermoelectric material, whose dimensionless figure of merit (
ZT
) reaches ∼0.70 at 773 K. High phase-purity BiCuSeO polycrystalline materials with fine grains were synthesized by a facile method combining a solid-state reaction and spark plasma sintering. Purifying the constitutive phase and reducing the grain sizes by introducing a high-energy ball milling process before spark plasma sintering were found to be effective in property enhancement. The resultant single-phased BiCuSeO sample derived from ball-milled powders shows good electrical conductivity above 4.0 × 10
3
S m
−1
and a large Seebeck coefficient above 200 μV K
−1
. This compound has a low thermal conductivity (∼0.5 W m
−1
K
−1
), which is associated with its low phonon transport speed and Young's modulus. Results indicated that BiCuSeO-based materials are promising for energy conversion applications in the moderate temperature range.
Good electrical conductivity, large Seebeck coefficients and low thermal conductivity were obtained for pristine BiCuSeO oxides with a layered structure of alternately stacked conductive (Cu
2
Se
2
)
2−
and insulating (Bi
2
O
2
)
2+
layers, resulting in a high
ZT
value of 0.70 at 773 K. |
---|---|
Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1754-5692 1754-5706 |
DOI: | 10.1039/c2ee21274a |