Bipolar resistive switching properties in transparent vanadium oxide resistive random access memory

• Published in: Ceramics international Vol. 39; pp. S729 - S732
• Main Authors: Yang, Fann-Wei, Chen, Kai-Huang, Cheng, Chien-Min, Su, Feng-Yi
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.05.2013
• Subjects: C. Electrical conductivity; C. Electrical properties; Devices; E. Capacitors; E. Functional applications; High voltages; Indium tin oxide; Memory devices; Random access memory; Switching; Thin films; Vanadium oxides; E. Functional applications; C. Electrical properties; C. Electrical conductivity; E. Capacitors
• ISSN: 0272-8842; 1873-3956
• DOI: 10.1016/j.ceramint.2012.10.170

The bipolar switching and electrical conduction properties in transparent vanadium oxide (VO) resistance random access memory device were investigated in this study. The as-deposited VO thin films were deposited onto transparent indium tin oxide (ITO) substrate for the possible application in the structure of system on panel (SOP) devices. The transmittance of as-deposited VO thin films within the UV–vis spectrum in the wavelength range of 300–1100nm was obtained. In addition, the Al/VO/ITO device shows reliable bipolar switching behaviors. The on/off ratio and biopolar switching cycling of two stable states for resistance random access memory device were found. We suggested that the current–voltage characteristics were governed by the space charge limit conduction (SCLC) transport models mechanism in low and high voltage regions.