Investigation of defect states in light-irradiated single-crystal ZnO by low-temperature positron annihilation lifetime spectroscopy

Abstract Positron annihilation lifetime spectroscopy of single crystalline ZnO during light illumination has been performed in conjunction with electron spin resonance (ESR) to investigate defects related to persistent photoconductivity. The intensity of the ESR signal changes depending on the light...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 61; no. 10; pp. 100905 - 100908
Main Authors Nakajima, Makoto, Kinomura, Atsushi, Yabuuchi, Atsushi, Kuriyama, Kazuo
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.10.2022
Japanese Journal of Applied Physics
Subjects
Crystal defects
Electron paramagnetic resonance
Electron spin
Illumination
Light
Low temperature
Luminous intensity
persistent photoconductivity
Photoconductivity
Positron annihilation
positron annihilation spectroscopy
Single crystals
Spectroscopy
Spin resonance
vacancy
Zinc oxide
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Summary:Abstract Positron annihilation lifetime spectroscopy of single crystalline ZnO during light illumination has been performed in conjunction with electron spin resonance (ESR) to investigate defects related to persistent photoconductivity. The intensity of the ESR signal changes depending on the light wavelengths and the apparent positron lifetime during red-light illumination is approximately 6 ps lower on average than that during blue-light illumination. The results suggest that the excitation of V O during blue-light illumination increases positively ionized V O , while the relaxation of V O during red-light illumination decreases positively ionized V O , leading to a decrease in the apparent positron lifetime.
Bibliography:JJAP-104588.R1
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac9103