Quantification of Bi distribution in MOVPE-grown Ga(AsBi) via HAADF STEM

• Published in: Journal of crystal growth Vol. 433; pp. 89 - 96
• Main Authors: Knaub, Nikolai, Beyer, Andreas, Wegele, Tatjana, Ludewig, Peter, Volz, Kerstin
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.01.2016
• Subjects: A1. Characterization; A1. Scanning transmission electron microscopy; A3. Metalorganic vapor phase epitaxy; Alloys; Annular; B1. Bismuth compounds; B2. Semiconducting III–V materials; Samples; Scanning transmission electron microscopy; Semiconductors; Statistical analysis; Statistical methods; A1. Scanning transmission electron microscopy; A3. Metalorganic vapor phase epitaxy; B1. Bismuth compounds; A1. Characterization; B2. Semiconducting III–V materials

The importance of dilute bismide III/V semiconductors increases and their physical properties open up a wide range for applications. Therefore, high quality layers are required, what is difficult to achieve, as these alloys are highly metastable and phase separation can occur. We use HAADF (high ang...