Atomistic insights into silver-indium solid solution softening mechanism for microelectronics packaging

Silver-indium solid solution is the key material in advancing low-temperature/pressure solid-state technology for electronics packaging, due to its rare solid solution softening (SSS) phenomenon. In this work, the critical resolved shear stress (CRSS) for slip, ideal shear strength and critical twin...

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Published inJournal of materials research and technology Vol. 24; pp. 6065 - 6075
Main Authors Zhao, Shuang, Zheng, Bing, Zhang, Donglin, Xie, Xiaochen, Qu, Zhibo, Wang, Yong, Zhao, Xiuchen, Wu, Jiaqi, Lee, Chin C., Huo, Yongjun
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.2023
Elsevier
Subjects
Generalized planar fault energy
Microelectronics packaging
Solid solution softening
Solid-state bonding
Solid-state bonding
Solid solution softening
Microelectronics packaging
Generalized planar fault energy
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Abstract Silver-indium solid solution is the key material in advancing low-temperature/pressure solid-state technology for electronics packaging, due to its rare solid solution softening (SSS) phenomenon. In this work, the critical resolved shear stress (CRSS) for slip, ideal shear strength and critical twinning stress of silver-indium disordered solid solutions were systematically evaluated by the generalized planar fault energy (GPFE) analysis, using first-principles modelling. Compared with others, Ag-based metals have much lower ideal shear strength and critical twinning stress, whereas the CRSS for slip of silver-indium solid solutions decreases with the increases of indium content, therefore exhibiting a general trend of softening behaviors. For the first time, the electronic origin of silver-indium SSS mechanism has been unveiled, where the modification of its GPFE structure was the fundamental cause for the reduction of CRSS for slip, critical twinning stress and the corresponding SSS phenomenon. As confirmed by transmission electron microscopy, this work presents a new design criterion for the next-generation solid-state bonding materials development.
AbstractList Silver-indium solid solution is the key material in advancing low-temperature/pressure solid-state technology for electronics packaging, due to its rare solid solution softening (SSS) phenomenon. In this work, the critical resolved shear stress (CRSS) for slip, ideal shear strength and critical twinning stress of silver-indium disordered solid solutions were systematically evaluated by the generalized planar fault energy (GPFE) analysis, using first-principles modelling. Compared with others, Ag-based metals have much lower ideal shear strength and critical twinning stress, whereas the CRSS for slip of silver-indium solid solutions decreases with the increases of indium content, therefore exhibiting a general trend of softening behaviors. For the first time, the electronic origin of silver-indium SSS mechanism has been unveiled, where the modification of its GPFE structure was the fundamental cause for the reduction of CRSS for slip, critical twinning stress and the corresponding SSS phenomenon. As confirmed by transmission electron microscopy, this work presents a new design criterion for the next-generation solid-state bonding materials development.
Author Zhao, Shuang
Zhang, Donglin
Xie, Xiaochen
Zheng, Bing
Qu, Zhibo
Wu, Jiaqi
Zhao, Xiuchen
Lee, Chin C.
Wang, Yong
Huo, Yongjun
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Keywords Solid-state bonding
Solid solution softening
Microelectronics packaging
Generalized planar fault energy
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Snippet Silver-indium solid solution is the key material in advancing low-temperature/pressure solid-state technology for electronics packaging, due to its rare solid...
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SubjectTerms Generalized planar fault energy
Microelectronics packaging
Solid solution softening
Solid-state bonding
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Title Atomistic insights into silver-indium solid solution softening mechanism for microelectronics packaging
URI https://dx.doi.org/10.1016/j.jmrt.2023.04.214
https://doaj.org/article/558058b43d9f4b448565f2e856c6158b
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