Analysis of impurity doping in tunnel junction grown on core–shell structure composed of GaInN/GaN multiple-quantum-shells and GaN nanowire

Abstract This study aimed to investigate and analyze the impurity doping characteristics in tunnel junctions (TJs) grown on core–shell structures, comprising GaInN/GaN multiple-quantum-shells (MQSs) and GaN nanowires. To this end, the impurity, structural, and electrical properties of the samples we...

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Published inJapanese Journal of Applied Physics Vol. 61; no. 1; pp. 12002 - 12009
Main Authors Sone, Naoki, Jinno, Daiki, Miyamoto, Yoshiya, Okuda, Renji, Yamamura, Shiori, Jinno, Yukimi, Lu, Weifang, Han, Dong-Pyo, Okuno, Koji, Mizutani, Koichi, Nakajima, Satoru, Koyama, Jun, Ishimura, Satoshi, Mayama, Norihito, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
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LanguageEnglish
Published Tokyo IOP Publishing 01.01.2022
Japanese Journal of Applied Physics
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Abstract Abstract This study aimed to investigate and analyze the impurity doping characteristics in tunnel junctions (TJs) grown on core–shell structures, comprising GaInN/GaN multiple-quantum-shells (MQSs) and GaN nanowires. To this end, the impurity, structural, and electrical properties of the samples were characterized by scanning electron microscopy, scanning transmission electron microscopy, atom probe tomography (APT), nanoscale secondary ion mass spectrometry (NanoSIMS), and electroluminescence of the device which was fabricated for a prototype laser device to demonstrate an electrical operation of the MQSs layer. From the experimental results of NanoSIMS and APT, we demonstrated that the Mg-related problems in the TJ, such as the diffusion to the n ++ -GaN layer from the p + -GaN layer and formation of clusters in p + -GaN, are critical. Consequently, they cause a high operating voltage and dot-like spot emission of the light-emitting device. Based on the analysis, we suggested remedies and strategies to further improve the TJs that work well.
AbstractList This study aimed to investigate and analyze the impurity doping characteristics in tunnel junctions (TJs) grown on core–shell structures, comprising GaInN/GaN multiple-quantum-shells (MQSs) and GaN nanowires. To this end, the impurity, structural, and electrical properties of the samples were characterized by scanning electron microscopy, scanning transmission electron microscopy, atom probe tomography (APT), nanoscale secondary ion mass spectrometry (NanoSIMS), and electroluminescence of the device which was fabricated for a prototype laser device to demonstrate an electrical operation of the MQSs layer. From the experimental results of NanoSIMS and APT, we demonstrated that the Mg-related problems in the TJ, such as the diffusion to the n++-GaN layer from the p+-GaN layer and formation of clusters in p+-GaN, are critical. Consequently, they cause a high operating voltage and dot-like spot emission of the light-emitting device. Based on the analysis, we suggested remedies and strategies to further improve the TJs that work well.
Abstract This study aimed to investigate and analyze the impurity doping characteristics in tunnel junctions (TJs) grown on core–shell structures, comprising GaInN/GaN multiple-quantum-shells (MQSs) and GaN nanowires. To this end, the impurity, structural, and electrical properties of the samples were characterized by scanning electron microscopy, scanning transmission electron microscopy, atom probe tomography (APT), nanoscale secondary ion mass spectrometry (NanoSIMS), and electroluminescence of the device which was fabricated for a prototype laser device to demonstrate an electrical operation of the MQSs layer. From the experimental results of NanoSIMS and APT, we demonstrated that the Mg-related problems in the TJ, such as the diffusion to the n ++ -GaN layer from the p + -GaN layer and formation of clusters in p + -GaN, are critical. Consequently, they cause a high operating voltage and dot-like spot emission of the light-emitting device. Based on the analysis, we suggested remedies and strategies to further improve the TJs that work well.
Author Kamiyama, Satoshi
Jinno, Yukimi
Koyama, Jun
Miyamoto, Yoshiya
Okuno, Koji
Mizutani, Koichi
Sone, Naoki
Han, Dong-Pyo
Okuda, Renji
Ishimura, Satoshi
Yamamura, Shiori
Iwaya, Motoaki
Takeuchi, Tetsuya
Akasaki, Isamu
Nakajima, Satoru
Mayama, Norihito
Jinno, Daiki
Lu, Weifang
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  organization: Nagoya University Akasaki Research Center, Nagoya 464-8603, Japan
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Snippet Abstract This study aimed to investigate and analyze the impurity doping characteristics in tunnel junctions (TJs) grown on core–shell structures, comprising...
This study aimed to investigate and analyze the impurity doping characteristics in tunnel junctions (TJs) grown on core–shell structures, comprising GaInN/GaN...
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SubjectTerms Core-shell structure
Diffusion layers
Doping
Electrical junctions
Electrical properties
Electroluminescence
Emission analysis
Gallium nitrides
GaN
Impurities
impurity
Light-emitting diode
Microscopy
multiple quantum shell
nanowire
Nanowires
Scanning electron microscopy
Scanning transmission electron microscopy
Secondary ion mass spectrometry
Shells
tunnel junction
Tunnel junctions
Title Analysis of impurity doping in tunnel junction grown on core–shell structure composed of GaInN/GaN multiple-quantum-shells and GaN nanowire
URI https://iopscience.iop.org/article/10.35848/1347-4065/ac3728
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