Analysis of impurity doping in tunnel junction grown on core–shell structure composed of GaInN/GaN multiple-quantum-shells and GaN nanowire

Abstract This study aimed to investigate and analyze the impurity doping characteristics in tunnel junctions (TJs) grown on core–shell structures, comprising GaInN/GaN multiple-quantum-shells (MQSs) and GaN nanowires. To this end, the impurity, structural, and electrical properties of the samples we...

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Published inJapanese Journal of Applied Physics Vol. 61; no. 1; pp. 12002 - 12009
Main Authors Sone, Naoki, Jinno, Daiki, Miyamoto, Yoshiya, Okuda, Renji, Yamamura, Shiori, Jinno, Yukimi, Lu, Weifang, Han, Dong-Pyo, Okuno, Koji, Mizutani, Koichi, Nakajima, Satoru, Koyama, Jun, Ishimura, Satoshi, Mayama, Norihito, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.01.2022
Japanese Journal of Applied Physics
Subjects
Core-shell structure
Diffusion layers
Doping
Electrical junctions
Electrical properties
Electroluminescence
Emission analysis
Gallium nitrides
GaN
Impurities
impurity
Light-emitting diode
Microscopy
multiple quantum shell
nanowire
Nanowires
Scanning electron microscopy
Scanning transmission electron microscopy
Secondary ion mass spectrometry
Shells
tunnel junction
Tunnel junctions
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Abstract Abstract This study aimed to investigate and analyze the impurity doping characteristics in tunnel junctions (TJs) grown on core–shell structures, comprising GaInN/GaN multiple-quantum-shells (MQSs) and GaN nanowires. To this end, the impurity, structural, and electrical properties of the samples were characterized by scanning electron microscopy, scanning transmission electron microscopy, atom probe tomography (APT), nanoscale secondary ion mass spectrometry (NanoSIMS), and electroluminescence of the device which was fabricated for a prototype laser device to demonstrate an electrical operation of the MQSs layer. From the experimental results of NanoSIMS and APT, we demonstrated that the Mg-related problems in the TJ, such as the diffusion to the n ++ -GaN layer from the p + -GaN layer and formation of clusters in p + -GaN, are critical. Consequently, they cause a high operating voltage and dot-like spot emission of the light-emitting device. Based on the analysis, we suggested remedies and strategies to further improve the TJs that work well.
AbstractList This study aimed to investigate and analyze the impurity doping characteristics in tunnel junctions (TJs) grown on core–shell structures, comprising GaInN/GaN multiple-quantum-shells (MQSs) and GaN nanowires. To this end, the impurity, structural, and electrical properties of the samples were characterized by scanning electron microscopy, scanning transmission electron microscopy, atom probe tomography (APT), nanoscale secondary ion mass spectrometry (NanoSIMS), and electroluminescence of the device which was fabricated for a prototype laser device to demonstrate an electrical operation of the MQSs layer. From the experimental results of NanoSIMS and APT, we demonstrated that the Mg-related problems in the TJ, such as the diffusion to the n++-GaN layer from the p+-GaN layer and formation of clusters in p+-GaN, are critical. Consequently, they cause a high operating voltage and dot-like spot emission of the light-emitting device. Based on the analysis, we suggested remedies and strategies to further improve the TJs that work well.
Abstract This study aimed to investigate and analyze the impurity doping characteristics in tunnel junctions (TJs) grown on core–shell structures, comprising GaInN/GaN multiple-quantum-shells (MQSs) and GaN nanowires. To this end, the impurity, structural, and electrical properties of the samples were characterized by scanning electron microscopy, scanning transmission electron microscopy, atom probe tomography (APT), nanoscale secondary ion mass spectrometry (NanoSIMS), and electroluminescence of the device which was fabricated for a prototype laser device to demonstrate an electrical operation of the MQSs layer. From the experimental results of NanoSIMS and APT, we demonstrated that the Mg-related problems in the TJ, such as the diffusion to the n ++ -GaN layer from the p + -GaN layer and formation of clusters in p + -GaN, are critical. Consequently, they cause a high operating voltage and dot-like spot emission of the light-emitting device. Based on the analysis, we suggested remedies and strategies to further improve the TJs that work well.
Author Kamiyama, Satoshi
Jinno, Yukimi
Koyama, Jun
Miyamoto, Yoshiya
Okuno, Koji
Mizutani, Koichi
Sone, Naoki
Han, Dong-Pyo
Okuda, Renji
Ishimura, Satoshi
Yamamura, Shiori
Iwaya, Motoaki
Takeuchi, Tetsuya
Akasaki, Isamu
Nakajima, Satoru
Mayama, Norihito
Jinno, Daiki
Lu, Weifang
Author_xml – sequence: 1
  givenname: Naoki
  surname: Sone
  fullname: Sone, Naoki
  organization: KOITO MANUFACTURING CO., Ltd., Shizuoka 424-8764, Japan
– sequence: 2
  givenname: Daiki
  surname: Jinno
  fullname: Jinno, Daiki
  organization: KOITO MANUFACTURING CO., Ltd., Shizuoka 424-8764, Japan
– sequence: 3
  givenname: Yoshiya
  surname: Miyamoto
  fullname: Miyamoto, Yoshiya
  organization: Meijo University Faculty of Science and Technology, Nagoya 468-8502, Japan
– sequence: 4
  givenname: Renji
  surname: Okuda
  fullname: Okuda, Renji
  organization: Meijo University Faculty of Science and Technology, Nagoya 468-8502, Japan
– sequence: 5
  givenname: Shiori
  surname: Yamamura
  fullname: Yamamura, Shiori
  organization: Meijo University Faculty of Science and Technology, Nagoya 468-8502, Japan
– sequence: 6
  givenname: Yukimi
  surname: Jinno
  fullname: Jinno, Yukimi
  organization: Meijo University Faculty of Science and Technology, Nagoya 468-8502, Japan
– sequence: 7
  givenname: Weifang
  orcidid: 0000-0001-6214-4024
  surname: Lu
  fullname: Lu, Weifang
  organization: Meijo University Faculty of Science and Technology, Nagoya 468-8502, Japan
– sequence: 8
  givenname: Dong-Pyo
  orcidid: 0000-0002-4108-6440
  surname: Han
  fullname: Han, Dong-Pyo
  organization: Meijo University Faculty of Science and Technology, Nagoya 468-8502, Japan
– sequence: 9
  givenname: Koji
  surname: Okuno
  fullname: Okuno, Koji
  organization: TOYODA GOSEI Co., Ltd., Inazawa 492-8542, Japan
– sequence: 10
  givenname: Koichi
  surname: Mizutani
  fullname: Mizutani, Koichi
  organization: TOYODA GOSEI Co., Ltd., Inazawa 492-8542, Japan
– sequence: 11
  givenname: Satoru
  surname: Nakajima
  fullname: Nakajima, Satoru
  organization: Toshiba Nanoanalysis Corporation, Yokohama 235-8522, Japan
– sequence: 12
  givenname: Jun
  surname: Koyama
  fullname: Koyama, Jun
  organization: Toshiba Nanoanalysis Corporation, Yokohama 235-8522, Japan
– sequence: 13
  givenname: Satoshi
  surname: Ishimura
  fullname: Ishimura, Satoshi
  organization: Toshiba Nanoanalysis Corporation, Yokohama 235-8522, Japan
– sequence: 14
  givenname: Norihito
  surname: Mayama
  fullname: Mayama, Norihito
  organization: Toshiba Nanoanalysis Corporation, Yokohama 235-8522, Japan
– sequence: 15
  givenname: Motoaki
  orcidid: 0000-0002-4889-706X
  surname: Iwaya
  fullname: Iwaya, Motoaki
  organization: Meijo University Faculty of Science and Technology, Nagoya 468-8502, Japan
– sequence: 16
  givenname: Tetsuya
  surname: Takeuchi
  fullname: Takeuchi, Tetsuya
  organization: Meijo University Faculty of Science and Technology, Nagoya 468-8502, Japan
– sequence: 17
  givenname: Satoshi
  surname: Kamiyama
  fullname: Kamiyama, Satoshi
  organization: Meijo University Faculty of Science and Technology, Nagoya 468-8502, Japan
– sequence: 18
  givenname: Isamu
  surname: Akasaki
  fullname: Akasaki, Isamu
  organization: Nagoya University Akasaki Research Center, Nagoya 464-8603, Japan
BookMark eNp9kbtOwzAYhS1UJFrgAdgssbCE2rGdOCNCUJBQWWC23MQBR4ltfFHVjRdg4g15ElKKYEFM_-2cM3z_DEyMNQqAE4zOCeOUzzGhZUZRweayJmXO98D0ZzUBU4RynNEqzw_ALIRuHAtG8RS8XRjZb4IO0LZQDy55HTewsU6bJ6gNjMkY1cMumTpqa-CTt2sDx6a2Xn28vodn1fcwRJ_qmLwa14OzQTXbuIW8Ncv5Qi7hkPqoXa-ylyRNTEP2ZQtQmgZu70Yau9ZeHYH9VvZBHX_XQ_B4ffVweZPd3S9uLy_usppiFLOaNEyuGGslrpoGU455WTeMElmhUlZEyVVZ0BVXqEC5pCXnpSK8YiXFK4YRI4fgdJfrvH1JKkTR2eRHEkHkxZiHCCr4qMI7Ve1tCF61wnk9SL8RGIkv6mKLWGwRix310ZPtPNq639D_9Gd_6LtOOlFggQXC-fgr4ZqWfAJ0iJTq
CODEN JJAPB6
CitedBy_id crossref_primary_10_1039_D3NA01101A
crossref_primary_10_1021_acsami_2c13648
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ContentType Journal Article
Copyright 2021 The Japan Society of Applied Physics
Copyright Japanese Journal of Applied Physics Jan 2022
Copyright_xml – notice: 2021 The Japan Society of Applied Physics
– notice: Copyright Japanese Journal of Applied Physics Jan 2022
DBID AAYXX
CITATION
7U5
8FD
H8D
L7M
DOI 10.35848/1347-4065/ac3728
DatabaseName CrossRef
Solid State and Superconductivity Abstracts
Technology Research Database
Aerospace Database
Advanced Technologies Database with Aerospace
DatabaseTitle CrossRef
Aerospace Database
Solid State and Superconductivity Abstracts
Technology Research Database
Advanced Technologies Database with Aerospace
DatabaseTitleList Aerospace Database
CrossRef
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
Physics
EISSN 1347-4065
ExternalDocumentID 10_35848_1347_4065_ac3728
jjapac3728
GrantInformation_xml – fundername: Ministry of Education, Culture, Sports, Science and Technology
  grantid: Private University Research Branding Project; Program for research and development of next-gener
  funderid: https://doi.org/10.13039/501100001700
– fundername: Japan Society for the Promotion of Science
  grantid: 15H02019; 16H06416; 17H01055
  funderid: https://doi.org/10.13039/501100001691
– fundername: Core Research for Evolutional Science and Technology
  grantid: 16815710
  funderid: https://doi.org/10.13039/501100003382
GroupedDBID ACGFS
ACNCT
ALMA_UNASSIGNED_HOLDINGS
ATQHT
CEBXE
F5P
IOP
IZVLO
KOT
MC8
N5L
QTG
RNS
SJN
AAYXX
CITATION
7U5
8FD
H8D
L7M
ID FETCH-LOGICAL-c410t-c3d5ab55fa19dd148187cd543a907a93eab764b8e0602a47887e3895741b51053
IEDL.DBID IOP
ISSN 0021-4922
IngestDate Thu Oct 10 14:21:54 EDT 2024
Fri Aug 23 01:43:41 EDT 2024
Wed Aug 21 03:34:37 EDT 2024
Tue Dec 28 22:20:30 EST 2021
IsPeerReviewed true
IsScholarly true
Issue 1
Language English
License This article is available under the terms of the IOP-Standard License.
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c410t-c3d5ab55fa19dd148187cd543a907a93eab764b8e0602a47887e3895741b51053
Notes JJAP-103683.R3
ORCID 0000-0002-4889-706X
0000-0002-4108-6440
0000-0001-6214-4024
PQID 2614803068
PQPubID 2048742
PageCount 8
ParticipantIDs iop_journals_10_35848_1347_4065_ac3728
crossref_primary_10_35848_1347_4065_ac3728
proquest_journals_2614803068
PublicationCentury 2000
PublicationDate 2022-01-01
PublicationDateYYYYMMDD 2022-01-01
PublicationDate_xml – month: 01
  year: 2022
  text: 2022-01-01
  day: 01
PublicationDecade 2020
PublicationPlace Tokyo
PublicationPlace_xml – name: Tokyo
PublicationTitle Japanese Journal of Applied Physics
PublicationTitleAlternate Jpn. J. Appl. Phys
PublicationYear 2022
Publisher IOP Publishing
Japanese Journal of Applied Physics
Publisher_xml – name: IOP Publishing
– name: Japanese Journal of Applied Physics
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SSID ssj0026541
ssj0026590
ssj0026540
ssj0064762
Score 2.3470466
Snippet Abstract This study aimed to investigate and analyze the impurity doping characteristics in tunnel junctions (TJs) grown on core–shell structures, comprising...
This study aimed to investigate and analyze the impurity doping characteristics in tunnel junctions (TJs) grown on core–shell structures, comprising GaInN/GaN...
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iop
SourceType Aggregation Database
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SubjectTerms Core-shell structure
Diffusion layers
Doping
Electrical junctions
Electrical properties
Electroluminescence
Emission analysis
Gallium nitrides
GaN
Impurities
impurity
Light-emitting diode
Microscopy
multiple quantum shell
nanowire
Nanowires
Scanning electron microscopy
Scanning transmission electron microscopy
Secondary ion mass spectrometry
Shells
tunnel junction
Tunnel junctions
Title Analysis of impurity doping in tunnel junction grown on core–shell structure composed of GaInN/GaN multiple-quantum-shells and GaN nanowire
URI https://iopscience.iop.org/article/10.35848/1347-4065/ac3728
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hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Lb9QwELbaIiR64FFALBRkJMQBKbtJ_IgjcUGIPpBYOFCpF2Q5toO6qEnabC499Q_0xD_klzDjJNsWEELcbNmJ4_Fj5nNmPhPyworUFWVWRlIwEXHpyqgAVRDlwmWABpgSIVD4w1zuHfD3h-JwjbxexcLUzbD1TyHZEwX3IsT1zUBdqhlGPwLukWJmLMtStU5uMKVydOja__hpBbekQBqTy0xyJZOvSiTP5EApDmAqT9P-1-efW7qmvNbhA3_bwYNa2rlDvowd6r1Rvk27ZTG1Z79wPf5vj--S24O9St_0de-RNV9tkc0rLIZb5GbwIrXtfXIxUpzQuqRHx024GY-6EJNFjyq67NCrhi5Al-J8oF_xDIBCArk0f5x_b9ErlfaUtt2pp-jvXrfe4et2zX41n-2aOR19IKOTDqZFdxyFx1pqKkexvDJVjQzMD8jBzrvPb_ei4b6HyPIkXkaWOWEKIUqT5M4BTktUZp3gzACCNznzpsgkL5SPZZwa5P3PPNhbAoyiAu1E9pBsVHXlHxGa-VzmPLYuVpzzkpu4lKCulWe5tTJxE_JqHEjd9LQeGuBQkLZGaWuUtu6lPSEvYWT0sLjbv1V8fq3iYmEaLROdaAxRjlPduHJCtscZc1kxRTpWRG_q8b-29YTcSjESI5wGbZMNGBr_FOyjZfEsLIOfwXMCtQ
link.rule.ids 315,786,790,27955,27956,38898,53875
linkProvider IOP Publishing
linkToPdf http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1Lb9QwELZoEQgOPEoRSwsYCXFA8m4SP5IcEbDt8lh6oFJvlmM7aBc1CWRz4cQf4NR_2F_SmTzaLSCExM2WJ3E8Y3tmnJnPhDyzMnJZHudMSS6ZUC5nGagClkoXgzfAE9kmCn-Yq_1D8fZIHq1l8S_Kqt_6x1DsgII7FuL65qAukwlmP4Lfo-TEWB5HyaRy-Qa5Cks3xqC-2ceDc5dLSYQyuaiEa5X0vEWJWPWw4uBQpVHU_f78c2-XFNgGfORvu3irmqa3iRkG1UWkfBk3q2xsv_-C9_g_o75DbvV2K33Z0d8lV3yxRW6uoRlukWttNKmt75GfA9QJLXO6OK7aG_Koa3Oz6KKgqwaja-gSdCrOC_oZzwIoFBBT8_THSY3RqbSDtm2-eYpx72XtHb5uz8yK-WTPzOkQC8m-NjA9mmPWPlZTUziK7YUpSkRi3iaH0zefXu2z_t4HZkUYrJjlTppMytyEqXPgr4VJbJ0U3IAnb1LuTRYrkSU-UEFkEP8_9mB3STCOMrQX-X2yWZSFf0Bo7FOVisC6IBFC5MIEuQK1nXieWqtCNyIvBmHqqoP30OAWtRzXyHGNHNcdx0fkOUhH94u8_hvh00uEy6WptAp1qDFVOYg0iG5EdodZc0EYISwrenHJw3_t6wm5fvB6qt_P5u92yI0IkzPaA6JdsglS8o_AZFplj9tVcQZn-ggV
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Analysis+of+impurity+doping+in+tunnel+junction+grown+on+core%E2%80%93shell+structure+composed+of+GaInN%2FGaN+multiple-quantum-shells+and+GaN+nanowire&rft.jtitle=Japanese+Journal+of+Applied+Physics&rft.au=Sone%2C+Naoki&rft.au=Jinno%2C+Daiki&rft.au=Miyamoto%2C+Yoshiya&rft.au=Okuda%2C+Renji&rft.date=2022-01-01&rft.pub=IOP+Publishing&rft.issn=0021-4922&rft.eissn=1347-4065&rft.volume=61&rft.issue=1&rft_id=info:doi/10.35848%2F1347-4065%2Fac3728&rft.externalDocID=jjapac3728
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0021-4922&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0021-4922&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0021-4922&client=summon