Adsorption of atomic hydrogen on the Si(100)-(2x1)-Sb surface
The structural change of a Si(100)-(2×1)-Sb surface caused by atomic hydrogen adsorption at room temperature and 100°C was studied using time-of-flight impact collision ion scattering spectroscopy (TOF-ICISS) and low energy electron diffraction (LEED). In this study, we found from the change of TOF-...
Saved in:
Published in | Japanese Journal of Applied Physics Vol. 36; no. 7A; pp. 4435 - 4439 |
---|---|
Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Tokyo
Japanese journal of applied physics
01.07.1997
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | The structural change of a Si(100)-(2×1)-Sb surface caused by atomic hydrogen adsorption at room temperature and 100°C was studied using time-of-flight impact collision ion scattering spectroscopy (TOF-ICISS) and low energy electron diffraction (LEED). In this study, we found from the change of TOF-spectra and α-scans that when atomic hydrogen adsorbs on the Si(100)-(2×1)-Sb surface, (1) a structural transformation from (2×1) to (1×1) occurs, (2) Sb atoms existing on the Si(100) surface partly desorb even at room temperature, and (3) the rest of the Sb atoms are displaced from their original positions and form an almost two-dimensional layer with dispersive distribution of Sb atoms. These results are different from those for other metal adsorbates/Si systems reported previously. |
---|---|
AbstractList | The structural change of a Si(100)-(2×1)-Sb surface caused by atomic hydrogen adsorption at room temperature and 100°C was studied using time-of-flight impact collision ion scattering spectroscopy (TOF-ICISS) and low energy electron diffraction (LEED). In this study, we found from the change of TOF-spectra and α-scans that when atomic hydrogen adsorbs on the Si(100)-(2×1)-Sb surface, (1) a structural transformation from (2×1) to (1×1) occurs, (2) Sb atoms existing on the Si(100) surface partly desorb even at room temperature, and (3) the rest of the Sb atoms are displaced from their original positions and form an almost two-dimensional layer with dispersive distribution of Sb atoms. These results are different from those for other metal adsorbates/Si systems reported previously. |
Author | NODA, K KUI, K OURA, K RYU, J.-T KATAYAMA, M |
Author_xml | – sequence: 1 givenname: J.-T surname: RYU fullname: RYU, J.-T organization: Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan – sequence: 2 givenname: K surname: KUI fullname: KUI, K organization: Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan – sequence: 3 givenname: K surname: NODA fullname: NODA, K organization: Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan – sequence: 4 givenname: M surname: KATAYAMA fullname: KATAYAMA, M organization: Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan – sequence: 5 givenname: K surname: OURA fullname: OURA, K organization: Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan |
BackLink | http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2762093$$DView record in Pascal Francis |
BookMark | eNo9j8tKw0AUhgepYFvd-QBZuGjBiXNPs3BRirdSUKiuw1zO2JQ2E2YitG9vSsXV4T__dw58IzRoQgMI3VKSUyr4w3ar25yrXAguL9CQclFgQZQcoCEhjGJRMnaFRilt-6ikoEP0OHcpxLarQ5MFn-ku7GubbY4uhm_oV03WbSBb1xNKyBRP2IFO8dpk6Sd6beEaXXq9S3DzN8fo6_npc_GKV-8vb4v5CltBSYeNEtoJUIUE4kHy0hgvHQOYKScU6QtPTAG0x0ppSmm9987NyoLymQFn-Rjdn__aGFKK4Ks21nsdjxUl1Um9Wi7nHxVX1Um9x-_OeKuT1TsfdWPr9H_DCsVIyfkvtYlZcg |
CODEN | JJAPA5 |
CitedBy_id | crossref_primary_10_1016_S0039_6028_99_00033_3 crossref_primary_10_1016_S0039_6028_99_01153_X crossref_primary_10_1016_S0167_5729_99_00005_9 crossref_primary_10_1016_S0169_4332_01_00873_X crossref_primary_10_1116_1_590680 crossref_primary_10_1016_S0169_4332_00_00646_2 crossref_primary_10_1143_JJAP_37_3774 |
Cites_doi | 10.1016/0039-6028(96)00129-X 10.1016/0168-583X(88)90702-1 10.1016/0169-4332(92)90416-U 10.1016/0039-6028(90)90005-S 10.1016/0039-6028(94)91540-7 10.1103/PhysRevLett.66.1193 10.1016/0169-4332(93)90060-O 10.1116/1.589206 10.1016/0039-6028(92)90456-G 10.1063/1.117387 10.1143/JJAP.33.L1106 10.1016/0168-583X(94)95860-2 10.1016/0039-6028(86)90809-5 10.1016/0039-6028(91)90624-2 10.1103/PhysRevB.42.11682 10.1103/PhysRevLett.62.567 10.1016/0168-583X(88)90699-4 10.1016/0169-4332(94)90238-0 10.1103/PhysRevB.44.1950 10.1016/0039-6028(90)90004-R |
ContentType | Journal Article |
Copyright | 1997 INIST-CNRS |
Copyright_xml | – notice: 1997 INIST-CNRS |
DBID | IQODW AAYXX CITATION |
DOI | 10.1143/jjap.36.4435 |
DatabaseName | Pascal-Francis CrossRef |
DatabaseTitle | CrossRef |
DatabaseTitleList | CrossRef |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Physics |
EISSN | 1347-4065 |
EndPage | 4439 |
ExternalDocumentID | 10_1143_JJAP_36_4435 2762093 |
GroupedDBID | 4.4 AALHV ACGFS ACNCT AEFHF AI. ALMA_UNASSIGNED_HOLDINGS ATQHT CEBXE F5P IOP IQODW IZVLO KOT MC8 N5L QTG RNS RW3 SJN TKC VH1 AAYXX CITATION |
ID | FETCH-LOGICAL-c410t-b64ad4e675e0fe539bbf5d2ee86d460e67f0b7e164a95b95cfffdd897138bedc3 |
ISSN | 0021-4922 |
IngestDate | Fri Aug 23 01:37:06 EDT 2024 Thu Nov 24 18:33:52 EST 2022 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 7A |
Keywords | Inorganic adsorbate Semiconductor materials Antimony Desorption Inorganic adsorbent Experimental study Surface structure Nonmetals Ion scattering Hydrogen Atoms Adsorption structure Silicon LEED |
Language | English |
License | CC BY 4.0 |
LinkModel | OpenURL |
MergedId | FETCHMERGED-LOGICAL-c410t-b64ad4e675e0fe539bbf5d2ee86d460e67f0b7e164a95b95cfffdd897138bedc3 |
PageCount | 5 |
ParticipantIDs | crossref_primary_10_1143_JJAP_36_4435 pascalfrancis_primary_2762093 |
PublicationCentury | 1900 |
PublicationDate | 1997-07-01 |
PublicationDateYYYYMMDD | 1997-07-01 |
PublicationDate_xml | – month: 07 year: 1997 text: 1997-07-01 day: 01 |
PublicationDecade | 1990 |
PublicationPlace | Tokyo |
PublicationPlace_xml | – name: Tokyo |
PublicationTitle | Japanese Journal of Applied Physics |
PublicationYear | 1997 |
Publisher | Japanese journal of applied physics |
Publisher_xml | – name: Japanese journal of applied physics |
References | 1989; 62 1990; 42 1991; 254 1986; 165 1992; 262 1991; 66 1991; 44 1993; 63 1994; 33 1988; 33 1973 1996; 363 1992; 60/61 1996; 14 1996; 69 1994; 82/83 1994; 85 1990; 230 1994; 307–309 |
References_xml | – volume: 363 start-page: 161 year: 1996 publication-title: Surf. Sci. doi: 10.1016/0039-6028(96)00129-X – volume: 33 start-page: 871 year: 1988 publication-title: Nucl. Instrum. & Methods B doi: 10.1016/0168-583X(88)90702-1 – volume: 60/61 start-page: 195 year: 1992 publication-title: Appl. Surf. Sci. doi: 10.1016/0169-4332(92)90416-U – publication-title: Appl. Surf. Sci. – volume: 230 start-page: L151 year: 1990 publication-title: Surf. Sci. Lett. doi: 10.1016/0039-6028(90)90005-S – volume: 307–309 start-page: 1061 year: 1994 publication-title: Surf. Sci. doi: 10.1016/0039-6028(94)91540-7 – volume: 66 start-page: 1193 year: 1991 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.66.1193 – volume: 63 start-page: 35 year: 1993 publication-title: Appl. Surf. Sci. doi: 10.1016/0169-4332(93)90060-O – volume: 14 start-page: 1655 year: 1996 publication-title: J. Vac. Sci. Technol. B doi: 10.1116/1.589206 – volume: 262 start-page: 25 year: 1992 publication-title: Surf. Sci. doi: 10.1016/0039-6028(92)90456-G – year: 1973 – volume: 69 start-page: 1267 year: 1996 publication-title: Appl. Phys. Lett. doi: 10.1063/1.117387 – volume: 33 start-page: L1106 year: 1994 publication-title: Jpn. J. Appl. Phys. doi: 10.1143/JJAP.33.L1106 – volume: 85 start-page: 439 year: 1994 publication-title: Nucl. Instrum. & Methods B doi: 10.1016/0168-583X(94)95860-2 – volume: 165 start-page: 303 year: 1986 publication-title: Surf. Sci. doi: 10.1016/0039-6028(86)90809-5 – volume: 254 start-page: L460 year: 1991 publication-title: Surf. Sci. Lett. doi: 10.1016/0039-6028(91)90624-2 – volume: 42 start-page: 11682 year: 1990 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.42.11682 – volume: 62 start-page: 567 year: 1989 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.62.567 – volume: 33 start-page: 857 year: 1988 publication-title: Nucl. Instrum. & Methods B doi: 10.1016/0168-583X(88)90699-4 – volume: 82/83 start-page: 338 year: 1994 publication-title: Appl. Surf. Sci. doi: 10.1016/0169-4332(94)90238-0 – volume: 44 start-page: 1950 year: 1991 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.44.1950 – volume: 230 start-page: L147 year: 1990 publication-title: Surf. Sci. Lett. doi: 10.1016/0039-6028(90)90004-R |
SSID | ssj0026541 ssj0026590 ssj0026540 ssj0064762 |
Score | 1.5229887 |
Snippet | The structural change of a Si(100)-(2×1)-Sb surface caused by atomic hydrogen adsorption at room temperature and 100°C was studied using time-of-flight impact... |
SourceID | crossref pascalfrancis |
SourceType | Aggregation Database Index Database |
StartPage | 4435 |
SubjectTerms | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface structure and topography Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) |
Title | Adsorption of atomic hydrogen on the Si(100)-(2x1)-Sb surface |
Volume | 36 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Rj5QwEG7WMyYaY_TUeOoZHjS5C2EPaCnwYrIxmnWN5-V2L7k30tJW0bhsWHhY_4h_wn_hH3O6BbZ77sPpC2EGSoD5mE7LzFeEXkqfRzJJuBeEcQoDFBF6LGXM0_RKOGQQs6-nsj-e0vEFmVxGl4PBLytrqan5MP-xs67kf6wKOrCrrpL9B8v2FwUF7IN9YQsWhu21bDwSy7JadDHfqNYVxu54JaoSmrS_AdxpobmY9GLMqQd7of41nsaBFqccHEelWL6dDwT9p16X0t0RrK4TRnMr7bCcf_Zm7Jt7vmpMsoyl6J15WeRfiqp0PzQmd8CSLYf_tXBPS8HaaqFW6gFR1MvGNGI1W7HvzCT9X9VuZjEMA2zczWJ0VQUwlk1NjfJQGmeMSQzwMWtJdN7a0KW0qIzPLd9LiCE--btTIJqcYjIZnQ0xHXanbXNvX-kT-0xFU7eNM906wzTTrW-gmwBsrBMI338664f3NNK0ORshsIS0P0JJTFsKe_PAXTUGwSf2LW7FSXcXbAmfrDJrrVgB0Ow-uteCwRkZGD5AAznfR3csPst9dKuFx0P0egNNp1SOgabTQdMBLUDTmRZHAMxj7yj8_TM4Bjg6LRwfoYt3b2dvxl67VIeXk8CvPU4JE0TC6FP6SkY45VxFIpQyoYJQHw4on8cSxuYsjXga5UopIRJAO064FDl-jPbm5Vw-QU6uYkahC6bSz4mQNFGY5kxPC8QhixN5gF51LyZbGEaWbJeVDtDh1lvrTw7BAH6Kn17zOs_Q7Q1gn6O9umrkIQSiNX-xtv8fdzd-5Q |
link.rule.ids | 315,783,787,27938,27939 |
linkProvider | IOP Publishing |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Adsorption+of+Atomic+Hydrogen+on+the+Si%28100%29-%282%C3%971%29-Sb+Surface&rft.jtitle=Japanese+Journal+of+Applied+Physics&rft.au=Jeong-Tak+Ryu%2C+Jeong-Tak+Ryu&rft.au=Koichiro+Kui%2C+Koichiro+Kui&rft.au=Kenji+Noda%2C+Kenji+Noda&rft.au=Mitsuhiro+Katayama%2C+Mitsuhiro+Katayama&rft.date=1997-07-01&rft.issn=0021-4922&rft.eissn=1347-4065&rft.volume=36&rft.issue=7R&rft.spage=4435&rft_id=info:doi/10.1143%2FJJAP.36.4435&rft.externalDBID=n%2Fa&rft.externalDocID=10_1143_JJAP_36_4435 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0021-4922&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0021-4922&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0021-4922&client=summon |