Addressing the sneak-path problem in crossbar RRAM devices using memristor-based one Schottky diode-one resistor array

• Published in: Results in physics Vol. 12; pp. 1091 - 1096
• Main Author: Gül, Fatih
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.03.2019; Elsevier
• Subjects: 1D1R; Memristor; Resistive switching; RRAM; Schottky diode; Zinc oxide; Memristor; Zinc oxide; RRAM; 1D1R; Resistive switching; Schottky diode

Resistive random access memories (RRAMs) are favorable contenders in the race towards future technologies. Moreover, the desirable properties of memristor-based RRAM devices make them very good competitors in this field. The sneak paths problem poses one of the main difficulties in the construction...