The thermal expansion of (Fe1−yNiy)Si

We have measured the thermal expansion of (Fe1−yNiy)Si for y  =  0, 0.1 and 0.2, between 40 and 1273 K. Above ~700 K the unit-cell volumes of the samples decrease approximately linearly with increasing Ni content. Below ~200 K the unit-cell volume of FeSi falls to a value between that of (Fe0.9Ni0.1...

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Published inJournal of physics. Condensed matter Vol. 29; no. 33; p. 335701
Main Authors Hunt, Simon A, Wann, Elizabeth T H, Dobson, David P, Vo adlo, Lindunka, Wood, Ian G
Format Journal Article
LanguageEnglish
Published England IOP Publishing 23.08.2017
Subjects
band-gap
heat capacity
semiconductor
x-ray diffraction
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Abstract We have measured the thermal expansion of (Fe1−yNiy)Si for y  =  0, 0.1 and 0.2, between 40 and 1273 K. Above ~700 K the unit-cell volumes of the samples decrease approximately linearly with increasing Ni content. Below ~200 K the unit-cell volume of FeSi falls to a value between that of (Fe0.9Ni0.1)Si and (Fe0.8Ni0.2)Si. We attribute this extra contraction of the FeSi, which is a narrow band-gap semiconductor, to the depopulation of the conduction band at low temperatures; in the two alloys the additional electrons introduced by the substitution of Ni lead to the conduction band always being populated. We have fit the unit-cell volume data with a Debye internal energy model of thermal expansion and an additional volume term, above 800 K, to take account of the volumetric changes associated with changes in the composition of the sample. Using the thermophysical parameters of the fit we have estimated the band gap in FeSi to be 21(1) meV and the unit-cell volume change in FeSi associated with the depopulation of the conduction band to be 0.066(35) Å3/unit-cell.
AbstractList We have measured the thermal expansion of (Fe1-y Ni y )Si for y  =  0, 0.1 and 0.2, between 40 and 1273 K. Above ~700 K the unit-cell volumes of the samples decrease approximately linearly with increasing Ni content. Below ~200 K the unit-cell volume of FeSi falls to a value between that of (Fe0.9Ni0.1)Si and (Fe0.8Ni0.2)Si. We attribute this extra contraction of the FeSi, which is a narrow band-gap semiconductor, to the depopulation of the conduction band at low temperatures; in the two alloys the additional electrons introduced by the substitution of Ni lead to the conduction band always being populated. We have fit the unit-cell volume data with a Debye internal energy model of thermal expansion and an additional volume term, above 800 K, to take account of the volumetric changes associated with changes in the composition of the sample. Using the thermophysical parameters of the fit we have estimated the band gap in FeSi to be 21(1) meV and the unit-cell volume change in FeSi associated with the depopulation of the conduction band to be 0.066(35) Å3/unit-cell.
We have measured the thermal expansion of (Fe1−yNiy)Si for y  =  0, 0.1 and 0.2, between 40 and 1273 K. Above ~700 K the unit-cell volumes of the samples decrease approximately linearly with increasing Ni content. Below ~200 K the unit-cell volume of FeSi falls to a value between that of (Fe0.9Ni0.1)Si and (Fe0.8Ni0.2)Si. We attribute this extra contraction of the FeSi, which is a narrow band-gap semiconductor, to the depopulation of the conduction band at low temperatures; in the two alloys the additional electrons introduced by the substitution of Ni lead to the conduction band always being populated. We have fit the unit-cell volume data with a Debye internal energy model of thermal expansion and an additional volume term, above 800 K, to take account of the volumetric changes associated with changes in the composition of the sample. Using the thermophysical parameters of the fit we have estimated the band gap in FeSi to be 21(1) meV and the unit-cell volume change in FeSi associated with the depopulation of the conduction band to be 0.066(35) Å3/unit-cell.
We have measured the thermal expansion of (Fe Ni )Si for y  =  0, 0.1 and 0.2, between 40 and 1273 K. Above ~700 K the unit-cell volumes of the samples decrease approximately linearly with increasing Ni content. Below ~200 K the unit-cell volume of FeSi falls to a value between that of (Fe Ni )Si and (Fe Ni )Si. We attribute this extra contraction of the FeSi, which is a narrow band-gap semiconductor, to the depopulation of the conduction band at low temperatures; in the two alloys the additional electrons introduced by the substitution of Ni lead to the conduction band always being populated. We have fit the unit-cell volume data with a Debye internal energy model of thermal expansion and an additional volume term, above 800 K, to take account of the volumetric changes associated with changes in the composition of the sample. Using the thermophysical parameters of the fit we have estimated the band gap in FeSi to be 21(1) meV and the unit-cell volume change in FeSi associated with the depopulation of the conduction band to be 0.066(35) Å /unit-cell.
Author Vo adlo, Lindunka
Dobson, David P
Hunt, Simon A
Wood, Ian G
Wann, Elizabeth T H
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Snippet We have measured the thermal expansion of (Fe1−yNiy)Si for y  =  0, 0.1 and 0.2, between 40 and 1273 K. Above ~700 K the unit-cell volumes of the samples...
We have measured the thermal expansion of (Fe Ni )Si for y  =  0, 0.1 and 0.2, between 40 and 1273 K. Above ~700 K the unit-cell volumes of the samples...
We have measured the thermal expansion of (Fe1-y Ni y )Si for y  =  0, 0.1 and 0.2, between 40 and 1273 K. Above ~700 K the unit-cell volumes of the samples...
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heat capacity
semiconductor
x-ray diffraction
Title The thermal expansion of (Fe1−yNiy)Si
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