RE (La, Nd and Yb) doped CeO2 abrasive particles for chemical mechanical polishing of dielectric materials: Experimental and computational analysis
•Surface doping of CeO2 as CMP abrasives was done using La, Nd and Yb.•O vacancy formation energy and Ce3+ content was calculated by DFT and XPS.•Ce3+ content of CeO2 is largely improved after doping.•Doped CeO2 as CMP abrasive improves the polishing rate of SiO2 and surface quality. Ce3+ in CeO2, r...
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| Published in | Applied surface science Vol. 506; p. 144668 |
|---|---|
| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
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Elsevier B.V
15.03.2020
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| Abstract | •Surface doping of CeO2 as CMP abrasives was done using La, Nd and Yb.•O vacancy formation energy and Ce3+ content was calculated by DFT and XPS.•Ce3+ content of CeO2 is largely improved after doping.•Doped CeO2 as CMP abrasive improves the polishing rate of SiO2 and surface quality.
Ce3+ in CeO2, rather than Ce4+, is believed to provide assistance to the breaking up of SiO bond during chemical mechanical polishing (CMP) of silica. In the paper, lanthanide metals (La, Nd and Yb) doped CeO2 nanoparticles were synthesized by modified incipient impregnation method in order to improve the content of Ce3+ in CeO2 as polishing. X-ray photoelectron spectroscopy (XPS) experiments and density function theory (DFT) calculation demonstrate this approach could achieve surface doping of CeO2 nanoparticles, and facilitates the formation of oxygen vacancy and Ce3+ content. CMP experiments show that the polishing rate and the surface quality of silica wafer are obviously improved by using the doped CeO2 as abrasive particles. Especially for Nd/CeO2, content of Ce3+ increases from 0.146 to 0.235, the polishing rate of silica is accelerated by 29.6% in alkaline slurries, and a better surface quality (Sa = 9.6 Å) is obtained. |
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| AbstractList | Ce3+ in CeO2, rather than Ce4+, is believed to provide assistance to the breaking up of Si-O bond during chemical mechanical polishing (CMP) of silica. In the paper, lanthanide metals (La, Nd and Yb) doped CeO2 nanoparticles were synthesized by modified incipient impregnation method in order to improve the content of Ce3+ in CeO2 as polishing. X-ray photoelectron spectroscopy (XPS) experiments and density function theory (DFT) calculation demonstrate this approach could achieve surface doping of CeO2 nanoparticles, and facilitates the formation of oxygen vacancy and Ce3+ content. CMP experiments show that the polishing rate and the surface quality of silica wafer are obviously improved by using the doped CeO2 as abrasive particles. Especially for Nd/CeO2, content of Ce3+ increases from 0.146 to 0.235, the polishing rate of silica is accelerated by 29.6% in alkaline slurries, and a better surface quality (Sa = 9.6 angstrom) is obtained. •Surface doping of CeO2 as CMP abrasives was done using La, Nd and Yb.•O vacancy formation energy and Ce3+ content was calculated by DFT and XPS.•Ce3+ content of CeO2 is largely improved after doping.•Doped CeO2 as CMP abrasive improves the polishing rate of SiO2 and surface quality. Ce3+ in CeO2, rather than Ce4+, is believed to provide assistance to the breaking up of SiO bond during chemical mechanical polishing (CMP) of silica. In the paper, lanthanide metals (La, Nd and Yb) doped CeO2 nanoparticles were synthesized by modified incipient impregnation method in order to improve the content of Ce3+ in CeO2 as polishing. X-ray photoelectron spectroscopy (XPS) experiments and density function theory (DFT) calculation demonstrate this approach could achieve surface doping of CeO2 nanoparticles, and facilitates the formation of oxygen vacancy and Ce3+ content. CMP experiments show that the polishing rate and the surface quality of silica wafer are obviously improved by using the doped CeO2 as abrasive particles. Especially for Nd/CeO2, content of Ce3+ increases from 0.146 to 0.235, the polishing rate of silica is accelerated by 29.6% in alkaline slurries, and a better surface quality (Sa = 9.6 Å) is obtained. |
| ArticleNumber | 144668 |
| Author | Cheng, Jie Lu, Xinchun Huang, Shuo Li, Yang Wang, Tongqing Xie, Lile |
| Author_xml | – sequence: 1 givenname: Jie surname: Cheng fullname: Cheng, Jie organization: State Key Lab of Tribology, Tsinghua University, Beijing 100084, China – sequence: 2 givenname: Shuo surname: Huang fullname: Huang, Shuo organization: Applied Materials Physics, Department of Materials Science and Engineering, Royal Institute of Technology, Stockholm SE-100 44, Sweden – sequence: 3 givenname: Yang surname: Li fullname: Li, Yang organization: Department of Chemistry, Tsinghua University, Beijing 100084, China – sequence: 4 givenname: Tongqing surname: Wang fullname: Wang, Tongqing organization: State Key Lab of Tribology, Tsinghua University, Beijing 100084, China – sequence: 5 givenname: Lile surname: Xie fullname: Xie, Lile organization: State Key Lab of Tribology, Tsinghua University, Beijing 100084, China – sequence: 6 givenname: Xinchun surname: Lu fullname: Lu, Xinchun email: xclu@tsinghua.edu.cn organization: State Key Lab of Tribology, Tsinghua University, Beijing 100084, China |
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| Keywords | Incipient impregnation Chemical mechanical polishing (CMP) Lanthanide elements Surface doping Ceria (CeO2) Density functional theory (DFT) |
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| Snippet | •Surface doping of CeO2 as CMP abrasives was done using La, Nd and Yb.•O vacancy formation energy and Ce3+ content was calculated by DFT and XPS.•Ce3+ content... Ce3+ in CeO2, rather than Ce4+, is believed to provide assistance to the breaking up of Si-O bond during chemical mechanical polishing (CMP) of silica. In the... |
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| SubjectTerms | Ceria (CeO2) Chemical mechanical polishing (CMP) Density functional theory (DFT) Incipient impregnation Lanthanide elements Surface doping |
| Title | RE (La, Nd and Yb) doped CeO2 abrasive particles for chemical mechanical polishing of dielectric materials: Experimental and computational analysis |
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