Tunable Schottky barrier in van der Waals heterojunction composed of graphene and SiCP4 from first principle calculations
•The Schottky contact formed between graphene and SiCP4 is studied.•The barrier height and contact type can be tuned by changing the interlayer distance.•The charge transfer theory can be used to explain the change of Schottky barrier.•The Schottky barrier can be controlled by applying a vertical el...
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| Published in | Results in physics Vol. 44; p. 106189 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
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Elsevier B.V
01.01.2023
Elsevier |
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| Abstract | •The Schottky contact formed between graphene and SiCP4 is studied.•The barrier height and contact type can be tuned by changing the interlayer distance.•The charge transfer theory can be used to explain the change of Schottky barrier.•The Schottky barrier can be controlled by applying a vertical electric field.
The contact type between graphene and semiconducting two-dimensional materials is a crucial factor in determining the performance of nanoscale electronic devices based on two-dimensional materials. Recently, SiCP4 is proposed to have high charge mobility plus high stability. In this work, we study the contact type between graphene and SiCP4. The Schottky barrier is formed between graphene and SiCP4. By changing the interlayer distance, the Schottky barrier can be tuned in a wide range. The charge transfer at the interface induces a reverse shift between the bands of graphene and SiCP4. The amount of charge transfer can be used to explain the change in the Schottky barrier. Furthermore, the Schottky barrier can be controlled by applying a vertical electric field. The tunable Schottky barrier provides a guide for the design of the nanodevice based on graphene and SiCP4. |
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| AbstractList | The contact type between graphene and semiconducting two-dimensional materials is a crucial factor in determining the performance of nanoscale electronic devices based on two-dimensional materials. Recently, SiCP4 is proposed to have high charge mobility plus high stability. In this work, we study the contact type between graphene and SiCP4. The Schottky barrier is formed between graphene and SiCP4. By changing the interlayer distance, the Schottky barrier can be tuned in a wide range. The charge transfer at the interface induces a reverse shift between the bands of graphene and SiCP4. The amount of charge transfer can be used to explain the change in the Schottky barrier. Furthermore, the Schottky barrier can be controlled by applying a vertical electric field. The tunable Schottky barrier provides a guide for the design of the nanodevice based on graphene and SiCP4. •The Schottky contact formed between graphene and SiCP4 is studied.•The barrier height and contact type can be tuned by changing the interlayer distance.•The charge transfer theory can be used to explain the change of Schottky barrier.•The Schottky barrier can be controlled by applying a vertical electric field. The contact type between graphene and semiconducting two-dimensional materials is a crucial factor in determining the performance of nanoscale electronic devices based on two-dimensional materials. Recently, SiCP4 is proposed to have high charge mobility plus high stability. In this work, we study the contact type between graphene and SiCP4. The Schottky barrier is formed between graphene and SiCP4. By changing the interlayer distance, the Schottky barrier can be tuned in a wide range. The charge transfer at the interface induces a reverse shift between the bands of graphene and SiCP4. The amount of charge transfer can be used to explain the change in the Schottky barrier. Furthermore, the Schottky barrier can be controlled by applying a vertical electric field. The tunable Schottky barrier provides a guide for the design of the nanodevice based on graphene and SiCP4. |
| ArticleNumber | 106189 |
| Author | Wang, Zhaowu Zhang, Shaofeng |
| Author_xml | – sequence: 1 givenname: Shaofeng orcidid: 0000-0003-4617-5749 surname: Zhang fullname: Zhang, Shaofeng organization: School of Physics and Engineering, Longmen Laboratory, Henan University of Science and Technology, Luoyang 471023, China – sequence: 2 givenname: Zhaowu surname: Wang fullname: Wang, Zhaowu email: wangzhaowu@haust.edu.cn organization: School of Physics and Engineering, Longmen Laboratory, Henan University of Science and Technology, Luoyang 471023, China |
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| Cites_doi | 10.1038/nnano.2014.207 10.1103/PhysRevB.54.11169 10.1103/PhysRevLett.114.066803 10.1021/acs.jpclett.1c03708 10.1063/5.0033241 10.1063/1.4858400 10.1002/wcms.1266 10.1088/1361-6528/ab5de1 10.1088/1674-4926/41/7/071901 10.1088/1361-6633/abf1d4 10.1103/PhysRevB.104.165421 10.1103/PhysRevB.59.1758 10.1126/science.aac9439 10.1002/adfm.201604093 10.1016/0927-0256(96)00008-0 10.1039/C7CP03960C 10.1021/acs.jpclett.1c00682 10.1016/j.apsusc.2020.148389 10.1021/nn500676t 10.1103/PhysRevB.50.17953 10.1002/adma.201805417 10.1016/j.apsusc.2020.146749 10.1103/PhysRevB.102.075414 10.1021/acsanm.9b01164 10.1016/j.mseb.2017.03.011 10.1039/C9TC03213D 10.1103/PhysRevB.101.235419 10.1103/PhysRevApplied.12.064061 10.1063/5.0004278 10.1021/jp212181h 10.1039/C4NR03670K 10.1038/natrevmats.2016.61 10.1063/1.4982690 |
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| Keywords | Two-dimensional materials Density functional theory Schottky contact SiCP4 Van der Waals heterojunction Graphene |
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| Snippet | •The Schottky contact formed between graphene and SiCP4 is studied.•The barrier height and contact type can be tuned by changing the interlayer distance.•The... The contact type between graphene and semiconducting two-dimensional materials is a crucial factor in determining the performance of nanoscale electronic... |
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| SubjectTerms | Density functional theory Graphene Schottky contact SiCP4 Two-dimensional materials Van der Waals heterojunction |
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| Title | Tunable Schottky barrier in van der Waals heterojunction composed of graphene and SiCP4 from first principle calculations |
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