Ferromagnetism and Half‐Metallicity in Atomically Thin Holey Nitrogenated Graphene Based Systems
Metal‐free half‐metallicity has been the subject of immense research focus in the field of spintronic devices. By using density functional theoretical (DFT) calculations, atomically thin holey nitrogenated graphene (C2N) based systems are studied for possible spintronic applications. Ferromagnetism...
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| Published in | Chemphyschem Vol. 18; no. 17; pp. 2336 - 2346 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
Germany
Wiley Subscription Services, Inc
06.09.2017
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| Online Access | Get full text |
| ISSN | 1439-4235 1439-7641 1439-7641 |
| DOI | 10.1002/cphc.201700633 |
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| Abstract | Metal‐free half‐metallicity has been the subject of immense research focus in the field of spintronic devices. By using density functional theoretical (DFT) calculations, atomically thin holey nitrogenated graphene (C2N) based systems are studied for possible spintronic applications. Ferromagnetism is observed in all the C‐doped holey nitrogenated graphene. Interestingly, the holey nitrogenated graphene (C2N) based system shows strong half‐metallicity with a Curie temperature of approximately 297 K when a particular C‐doping concentration is reached. It shows a strong half‐metallicity compared with any metal‐free systems studied to date. Thus, such carbon nitride based systems can be used for a 100 % spin polarized current. Furthermore, such C‐doped systems show excellent dynamical, thermal, and mechanical properties. Thus, we predict a metal‐free planar ferromagnetic half‐metallic holey nitrogenated graphene based system for room‐temperature spintronic devices.
Holey doped graphene: By using density functional theoretical (DFT) calculations, C‐doped holey nitrogenated graphene based systems were studied for possible spintronic devices. Ferromagnetism is observed in all C‐doped systems and strong half‐metallicity is observed after achieving a particular C‐doping concentration (16.67 %) in C2N. The presence of half‐metallicity can be explained by the unsaturation on the doped C atom. |
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| AbstractList | Metal‐free half‐metallicity has been the subject of immense research focus in the field of spintronic devices. By using density functional theoretical (DFT) calculations, atomically thin holey nitrogenated graphene (C2N) based systems are studied for possible spintronic applications. Ferromagnetism is observed in all the C‐doped holey nitrogenated graphene. Interestingly, the holey nitrogenated graphene (C2N) based system shows strong half‐metallicity with a Curie temperature of approximately 297 K when a particular C‐doping concentration is reached. It shows a strong half‐metallicity compared with any metal‐free systems studied to date. Thus, such carbon nitride based systems can be used for a 100 % spin polarized current. Furthermore, such C‐doped systems show excellent dynamical, thermal, and mechanical properties. Thus, we predict a metal‐free planar ferromagnetic half‐metallic holey nitrogenated graphene based system for room‐temperature spintronic devices.
Holey doped graphene: By using density functional theoretical (DFT) calculations, C‐doped holey nitrogenated graphene based systems were studied for possible spintronic devices. Ferromagnetism is observed in all C‐doped systems and strong half‐metallicity is observed after achieving a particular C‐doping concentration (16.67 %) in C2N. The presence of half‐metallicity can be explained by the unsaturation on the doped C atom. Metal-free half-metallicity has been the subject of immense research focus in the field of spintronic devices. By using density functional theoretical (DFT) calculations, atomically thin holey nitrogenated graphene (C2N) based systems are studied for possible spintronic applications. Ferromagnetism is observed in all the C-doped holey nitrogenated graphene. Interestingly, the holey nitrogenated graphene (C2N) based system shows strong half-metallicity with a Curie temperature of approximately 297K when a particular C-doping concentration is reached. It shows a strong half-metallicity compared with any metal-free systems studied to date. Thus, such carbon nitride based systems can be used for a 100% spin polarized current. Furthermore, such C-doped systems show excellent dynamical, thermal, and mechanical properties. Thus, we predict a metal-free planar ferromagnetic half-metallic holey nitrogenated graphene based system for room-temperature spintronic devices. Metal-free half-metallicity has been the subject of immense research focus in the field of spintronic devices. By using density functional theoretical (DFT) calculations, atomically thin holey nitrogenated graphene (C N) based systems are studied for possible spintronic applications. Ferromagnetism is observed in all the C-doped holey nitrogenated graphene. Interestingly, the holey nitrogenated graphene (C N) based system shows strong half-metallicity with a Curie temperature of approximately 297 K when a particular C-doping concentration is reached. It shows a strong half-metallicity compared with any metal-free systems studied to date. Thus, such carbon nitride based systems can be used for a 100 % spin polarized current. Furthermore, such C-doped systems show excellent dynamical, thermal, and mechanical properties. Thus, we predict a metal-free planar ferromagnetic half-metallic holey nitrogenated graphene based system for room-temperature spintronic devices. Metal‐free half‐metallicity has been the subject of immense research focus in the field of spintronic devices. By using density functional theoretical (DFT) calculations, atomically thin holey nitrogenated graphene (C 2 N) based systems are studied for possible spintronic applications. Ferromagnetism is observed in all the C‐doped holey nitrogenated graphene. Interestingly, the holey nitrogenated graphene (C 2 N) based system shows strong half‐metallicity with a Curie temperature of approximately 297 K when a particular C‐doping concentration is reached. It shows a strong half‐metallicity compared with any metal‐free systems studied to date. Thus, such carbon nitride based systems can be used for a 100 % spin polarized current. Furthermore, such C‐doped systems show excellent dynamical, thermal, and mechanical properties. Thus, we predict a metal‐free planar ferromagnetic half‐metallic holey nitrogenated graphene based system for room‐temperature spintronic devices. Metal-free half-metallicity has been the subject of immense research focus in the field of spintronic devices. By using density functional theoretical (DFT) calculations, atomically thin holey nitrogenated graphene (C2 N) based systems are studied for possible spintronic applications. Ferromagnetism is observed in all the C-doped holey nitrogenated graphene. Interestingly, the holey nitrogenated graphene (C2 N) based system shows strong half-metallicity with a Curie temperature of approximately 297 K when a particular C-doping concentration is reached. It shows a strong half-metallicity compared with any metal-free systems studied to date. Thus, such carbon nitride based systems can be used for a 100 % spin polarized current. Furthermore, such C-doped systems show excellent dynamical, thermal, and mechanical properties. Thus, we predict a metal-free planar ferromagnetic half-metallic holey nitrogenated graphene based system for room-temperature spintronic devices.Metal-free half-metallicity has been the subject of immense research focus in the field of spintronic devices. By using density functional theoretical (DFT) calculations, atomically thin holey nitrogenated graphene (C2 N) based systems are studied for possible spintronic applications. Ferromagnetism is observed in all the C-doped holey nitrogenated graphene. Interestingly, the holey nitrogenated graphene (C2 N) based system shows strong half-metallicity with a Curie temperature of approximately 297 K when a particular C-doping concentration is reached. It shows a strong half-metallicity compared with any metal-free systems studied to date. Thus, such carbon nitride based systems can be used for a 100 % spin polarized current. Furthermore, such C-doped systems show excellent dynamical, thermal, and mechanical properties. Thus, we predict a metal-free planar ferromagnetic half-metallic holey nitrogenated graphene based system for room-temperature spintronic devices. |
| Author | Pathak, Biswarup Choudhuri, Indrani |
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| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/28665014$$D View this record in MEDLINE/PubMed |
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| Keywords | half-metallicity spintronics holey nitrogenated graphene metal-free conditions C-doping pyrazine/pyridine linkers C2N |
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| Snippet | Metal‐free half‐metallicity has been the subject of immense research focus in the field of spintronic devices. By using density functional theoretical (DFT)... Metal-free half-metallicity has been the subject of immense research focus in the field of spintronic devices. By using density functional theoretical (DFT)... |
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| SubjectTerms | C-doping C2N Carbon nitrides Curie temperature Devices Electrons Ferromagnetism Graphene half-metallicity holey nitrogenated graphene Mechanical properties metal-free conditions Metallicity pyrazine/pyridine linkers spintronics |
| Title | Ferromagnetism and Half‐Metallicity in Atomically Thin Holey Nitrogenated Graphene Based Systems |
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