Jafar, N., Jiang, J., Lu, H., Qasim, M., & Zhang, H. (2023). Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency. Crystals (Basel), 13(12), 1623. https://doi.org/10.3390/cryst13121623
Chicago Style (17th ed.) CitationJafar, Naveed, Jianliang Jiang, Heng Lu, Muhammad Qasim, and Hengli Zhang. "Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency." Crystals (Basel) 13, no. 12 (2023): 1623. https://doi.org/10.3390/cryst13121623.
MLA (9th ed.) CitationJafar, Naveed, et al. "Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency." Crystals (Basel), vol. 13, no. 12, 2023, p. 1623, https://doi.org/10.3390/cryst13121623.