Enhanced High-Frequency Performance of Top-Gated Graphene FETs Due to Substrate- Induced Improvements in Charge Carrier Saturation Velocity

• Published in: IEEE transactions on electron devices Vol. 68; no. 2; pp. 899 - 902
• Main Authors: Asad, Muhammad, Jeppson, Kjell O., Vorobiev, Andrei, Bonmann, Marlene, Stake, Jan
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.02.2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Aluminum oxide; Buffer layers; Charge carriers; Current carriers; Field effect transistors; Field-effect transistors (FETs); Frequency measurement; Graphene; Inelastic scattering; Logic gates; maximum frequency of oscillation; Optical buffering; optical phonons; Phonons; Saturation; saturation velocity; Semiconductor devices; Silicon dioxide; Silicon substrates; Substrates; transit frequency; Transit time; Velocity

The high-frequency performance of top-gated graphene field-effect transistors (GFETs) depends to a large extent on the saturation velocity of the charge carriers, a velocity limited by inelastic scattering by surface optical phonons from the dielectrics surrounding the channel. In this work, we show...