Direct growth of graphene on gallium nitride using C2H2 as carbon source

Growing graphene on gallium nitride （GaN） at temperatures greater than 900℃ is a challenge that must be overcome to obtain high quality of GaN epi-layers. We successfully met this challenge using C2H2 as the carbon source. We demonstrated that graphene can be grown both on copper and directly on GaN...

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Published inFrontiers of physics Vol. 11; no. 2; pp. 97 - 102
Main Author 王兵 赵云 伊晓燕 王国宏 刘志强 段瑞飞 黄鹏 王军喜 李晋闽
Format Journal Article
LanguageEnglish
Published Beijing Higher Education Press 01.04.2016
Springer Nature B.V
Subjects
Astronomy
Astrophysics and Cosmology
Atomic
Carbon
Carbon sources
Condensed Matter Physics
Gallium
Gallium nitrides
GaN
Graphene
Molecular
Optical and Plasma Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Raman spectra
Research Article
乙炔
氮化镓
生长温度
直接生长
石墨
碳源
薄膜生长
H
gallium nitride
C
Raman spectroscopy
chemical vapor deposition
graphene
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Summary:Growing graphene on gallium nitride （GaN） at temperatures greater than 900℃ is a challenge that must be overcome to obtain high quality of GaN epi-layers. We successfully met this challenge using C2H2 as the carbon source. We demonstrated that graphene can be grown both on copper and directly on GaN epi-layers. The Raman spectra indicated that the graphene films were about 4-5 layers thick. Meanwhile, the effects of the growth temperature on the growth of the graphene films were systematically studied, and 830℃ was found to be the optimum growth temperature. We successfully grew high-quality graphene films directly on gallium nitride.
Bibliography:graphene, C2H2, gallium nitride, chemical vapor deposition, Raman spectroscopy
Growing graphene on gallium nitride （GaN） at temperatures greater than 900℃ is a challenge that must be overcome to obtain high quality of GaN epi-layers. We successfully met this challenge using C2H2 as the carbon source. We demonstrated that graphene can be grown both on copper and directly on GaN epi-layers. The Raman spectra indicated that the graphene films were about 4-5 layers thick. Meanwhile, the effects of the growth temperature on the growth of the graphene films were systematically studied, and 830℃ was found to be the optimum growth temperature. We successfully grew high-quality graphene films directly on gallium nitride.
Bing Wang , Vun Zhao , Xiao-Yan Yi , Guo-Hong Wang ,Zhi-Qiang Liu , Rui-Rei Duan , Peng Huang , Jun-Xi Wang , Jin-Min Li （ Semiconductor Lighting Technology R＆D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China）
11-5994/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:2095-0462
2095-0470
DOI:10.1007/s11467-015-0534-5